Abstract: A display may have a pixel array such as a liquid crystal pixel array. The pixel array may be illuminated with backlight illumination from a direct-lit backlight unit. The backlight unit may include an array of light-emitting diodes (LEDs) on a printed circuit board. The display may have a notch to accommodate an input-output component. Reflective layers may be included in the notch. The backlight may include a color conversion layer with a property that varies as a function of position. The light-emitting diodes may be covered by a slab of encapsulant with recesses in an upper surface.

Abstract: A multi-column electron beam inspection system is disclosed herein. The system is designed for electron beam inspection of semiconductor wafers with throughput high enough for in-line use. The system includes field emission electron sources, electrostatic electron optical columns, a wafer stage with six degrees of freedom of movement, and image storage and processing systems capable of handling multiple simultaneous image data streams. Each electron optical column is enhanced with an electron gun with redundant field emission sources, a voltage contrast plate to allow voltage contrast imaging of wafers, and an electron optical design for high efficiency secondary electron collection.

Abstract: A multi-column electron beam inspection system is disclosed herein. The system is designed for electron beam inspection of semiconductor wafers with throughput high enough for in-line use. The system includes field emission electron sources, electrostatic electron optical columns, a wafer stage with six degrees of freedom of movement, and image storage and processing systems capable of handling multiple simultaneous image data streams. Each electron optical column is enhanced with an electron gun with redundant field emission sources, a voltage contrast plate to allow voltage contrast imaging of wafers, and an electron optical design for high efficiency secondary electron collection.

Abstract: An electron beam column incorporating an asymmetrical detector optics assembly provides improved secondary electron collection. The electron beam column comprises an electron gun, an accelerating region, scanning deflectors, focusing lenses, secondary electron detectors and an asymmetrical detector optics assembly. The detector optics assembly comprises a field-free tube, asymmetrical with respect to the electron optical axis; the asymmetry can be introduced by offsetting the field-free tube from the electron optical axis or by chamfering the end of the tube. In other embodiments the detector optics assembly comprises a field-free tube and a voltage contrast plate, either or both of which are asymmetrical with respect to the electron optical axis.

Abstract: A charge particle optical column capable of being used in a high throughput, mutli-column, multi-beam electron beam lithography system is disclosed herein. The column has the following properties: purely electrostatic components; small column footprint (20 mm square); multiple, individually focused charge particle beams; telecentric scanning of all beams simultaneously on a wafer for increased depth of field; and conjugate blanking of the charged particle beams for reduced beam blur. An electron gun is disclosed that uses microfabricated, field emission sources and a microfabricated aperture-deflector assembly. The aperture-deflector assembly acts as a perfect lens in focusing, steering and blanking a multipicity of electron beams through the back focal plane of an immersion lens located at the bottom of the column. Beam blanking can be performed using a gating signal to decrease beam blur during writing on the wafer.

Abstract: A charge particle optical column capable of being used in a high throughput, mutli-column, multi-beam electron beam lithography system is disclosed herein. The column has the following properties: purely electrostatic components; small column footprint (20 mm square); multiple, individually focused charge particle beams; telecentric scanning of all beams simultaneously on a wafer for increased depth of field; and conjugate blanking of the charged particle beams for reduced beam blur. An electron gun is disclosed that uses microfabricated field emission sources and a microfabricated aperture-deflector assembly. The aperture-deflector assembly acts as a perfect lens in focusing, steering and blanking a multipicity of electron beams through the back focal plane of an immersion lens located at the bottom of the column. Beam blanking can be performed using a gating signal to decrease beam blur during writing on the wafer.

Abstract: A charge particle optical column capable of being used in a high throughput, mutli-column, multi-beam electron beam lithography system is disclosed herein. The column has the following properties: purely electrostatic components; small column footprint (20 mm square); multiple, individually focused charge particle beams; telecentric scanning of all beams simultaneously on a wafer for increased depth of field; and conjugate blanking of the charged particle beams for reduced beam blur. An electron gun is disclosed that uses microfabricated field emission sources and a microfabricated aperture-deflector assembly. The aperture-deflector assembly acts as a perfect lens in focusing, steering and blanking a multipicity of electron beams through the back focal plane of an immersion lens located at the bottom of the column. Beam blanking can be performed using a gating signal to decrease beam blur during writing on the wafer.

Abstract: An electron beam column incorporating an asymmetrical detector optics assembly provides improved secondary electron collection. The electron beam column comprises an electron gun, an accelerating region, scanning deflectors, focusing lenses, secondary electron detectors and an asymmetrical detector optics assembly. The detector optics assembly comprises a field-free tube, asymmetrical with respect to the electron optical axis; the asymmetry can be introduced by offsetting the field-free tube from the electron optical axis or by chamfering the end of the tube. In other embodiments the detector optics assembly comprises a field-free tube and a voltage contrast plate, either or both of which are asymmetrical with respect to the electron optical axis.

Abstract: A multi-column electron beam inspection system is disclosed herein. The system is designed for electron beam inspection of semiconductor wafers with throughput high enough for in-line use. The system includes field emission electron sources, electrostatic electron optical columns, a wafer stage with six degrees of freedom of movement, and image storage and processing systems capable of handling multiple simultaneous image data streams. Each electron optical column is enhanced with an electron gun with redundant field emission sources, a voltage contrast plate to allow voltage contrast imaging of wafers, and an electron optical design for high efficiency secondary electron collection.