Abstract: Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a device-under-testing that has one or more source/drain regions and a first metallization level arranged over the device-under-testing. The first metallization level includes one or more first interconnect lines. The structure further includes a contact level having one or more first contacts arranged between the first metallization level and the device-under-testing. The one or more first contacts directly connect the one or more first interconnect lines with the one or more source/drain regions. The structure further includes a second metallization level arranged over the first metallization level. The second metallization level has a first test pad and one or more second interconnect lines connecting the one or more first interconnect lines with the first test pad.

Abstract: Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a test pad, a device-under-testing having one or more source/drain regions, and a metallization level arranged over the device-under-testing. The metallization level includes one or more interconnect lines that are connected with the test pad. One or more contacts, which are arranged between the metallization level and the device-under-testing, directly connect the one or more interconnect lines with the one or more source/drain regions.

Abstract: Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a device-under-testing that has one or more source/drain regions and a first metallization level arranged over the device-under-testing. The first metallization level includes one or more first interconnect lines. The structure further includes a contact level having one or more first contacts arranged between the first metallization level and the device-under-testing. The one or more first contacts directly connect the one or more first interconnect lines with the one or more source/drain regions. The structure further includes a second metallization level arranged over the first metallization level. The second metallization level has a first test pad and one or more second interconnect lines connecting the one or more first interconnect lines with the first test pad.

Abstract: Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a test pad, a device-under-testing having one or more source/drain regions, and a metallization level arranged over the device-under-testing. The metallization level includes one or more interconnect lines that are connected with the test pad. One or more contacts, which are arranged between the metallization level and the device-under-testing, directly connect the one or more interconnect lines with the one or more source/drain regions.

Abstract: An integrated circuit device having at least one fuse capable of being blown in order to provide measurements of fuse current-voltage characteristics is provided. The integrated circuit device also provides at least one pulse generation circuit associated with the fuse and capable of generating a pulse to blow the fuse through one or more DC input signals.

Abstract: An integrated circuit device having at least one fuse capable of being blown in order to provide measurements of fuse current-voltage characteristics is provided. The integrated circuit device also provides at least one pulse generation circuit associated with the fuse and capable of generating a pulse to blow the fuse through one or more DC input signals.

Abstract: A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes stresses on the crystalline body, such as an oxide. The body may be doped, and may also include a silicide layer on the upper surface. This fuse structure may be successfully programmed over a wide range of programming voltages and time.

Abstract: Detection of a profile drift of a polysilicon line is enhanced by a test structure that (1) measures a bottom width and an average width of a cross sectional area of the same polysilicon line (2) correlates the two measurements, and (3) compares such correlation with a previous correlation of bottom width to average width of cross sectional area of the same polysilicon line.

Abstract: A device is provided which includes a single-crystal semiconductor region disposed in a substrate. The single-crystal region includes a first semiconductor material and a diode disposed in the single-crystal region. The diode includes an anode region including a first alloy region, being an alloy of the first semiconductor material with a second semiconductor material, and a second region which consists essentially of the first semiconductor material, the diode further including a cathode region.

Abstract: An integrated circuit device having at least one fuse capable of being blown in order to provide measurements of fuse current-voltage characteristics is provided. The integrated circuit device also provides at least one pulse generation circuit associated with the fuse and capable of generating a pulse to blow the fuse through one or more DC input signals.

Abstract: A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes stresses on the crystalline body, such as an oxide. The body may be doped, and may also include a silicide layer on the upper surface. This fuse structure may be successfully programmed over a wide range of programming voltages and time.

Abstract: A method for forming a CMOS device in a manner so as to avoid dielectric layer undercut during a pre-silicide cleaning step is described. During formation of CMOS device comprising a gate stack on a semiconductor substrate surface, the patterned gate stack including gate dielectric below a conductor with vertical sidewalls, a dielectric layer is formed thereover and over the substrate surfaces. Respective nitride spacer elements overlying the dielectric layer are formed at each vertical sidewall. The dielectric layer on the substrate surface is removed using an etch process such that a portion of the dielectric layer underlying each spacer remains. Then, a nitride layer is deposited over the entire sample (the gate stack, the spacer elements at each gate sidewall, and substrate surfaces) and subsequently removed by an etch process such that only a portion of said nitride film (the “plug”) remains.

Abstract: Detection of a profile drift of a polysilicon line is enhanced by a test structure that (1) measures a bottom width and an average width of a cross sectional area of the same polysilicon line (2) correlates the two measurements, and (3) compares such correlation with a previous correlation of bottom width to average width of cross sectional area of the same polysilicon line.

Abstract: An identification circuit for establishing and sensing the state of a fusible element used in on chip identification of the chip's type comprising: a circuit establishing control signals for turning the identification circuit on and off; dual paths energized by the control signals generated by the level setting circuit to energize one path through the fusible element to provide a state level and the other path through a reference path which provides a reference voltage level which is distinguishable from both the blown and unblown states of the fusible element; a differential sensing circuit for comparing the reference voltage level to the state level to provide a signal indicating the state of the fusible element; and protection circuitry to protect the circuit during an operation in which the state of the fusible element is set.

Abstract: Disclosed is an on-chip test device for testing the thickness of gate oxides in transistors. A ring oscillator provides a ring oscillator output and an inverter receives the ring oscillator output as an input. The inverter is coupled to a gate oxide and the inverter receives different voltages as power supplies. The difference between the voltages provides a measurement of capacitance of the gate oxide. The difference between the voltages is less than or equal to approximately one-third of the difference between a second set of voltages provided to the ring oscillator. The capacitance of the gate oxide comprises the inverse of the frequency of the ring oscillator output multiplied by the difference between the voltages, less a capacitance constant for the test device. This capacitance constant is for the test device alone, and does not include any part of the capacitance of the gate oxide. The measurement of capacitance of the gate oxide is used to determine the thickness of the gate oxide.

Abstract: A method for forming a CMOS device in a manner so as to avoid dielectric layer undercut during a pre-silicide cleaning step is described. During formation of CMOS device comprising a gate stack on a semiconductor substrate surface, the patterned gate stack including gate dielectric below a conductor with vertical sidewalls, a dielectric layer is formed thereover and over the substrate surfaces. Respective nitride spacer elements overlying the dielectric layer are formed at each vertical sidewall. The dielectric layer on the substrate surface is removed using an etch process such that a portion of the dielectric layer underlying each spacer remains. Then, a nitride layer is deposited over the entire sample (the gate stack, the spacer elements at each gate sidewall, and substrate surfaces) and subsequently removed by an etch process such that only a portion of said nitride film (the “plug”) remains.

Abstract: Thermal degradation of a low-k organic dielectric material is avoided or limited in the proximity of a heat source such as a fusible element by overlaying the low-k material with a thermally conductive material and providing a low thermal resistance path from the thermally conductive material, possibly having a low modulus of elasticity, to a heat sink. The thermally conductive material thus provides crack-stop protection for further layers of an integrated circuit or interconnect structure above the fusible element by mechanical, chemical and thermal encapsulation of the heat source and low-k material.

Abstract: Thermal degradation of a low-k organic dielectric material is avoided or limited in the proximity of a heat source such as a fusible element by overlaying the low-k material with a thermally conductive material and providing a low thermal resistance path from the thermally conductive material, possibly having a low modulus of elasticity, to a heat sink. The thermally conductive material thus provides crack-stop protection for further layers of an integrated circuit or interconnect structure above the fusible element by mechanical, chemical and thermal encapsulation of the heat source and low-k material.