Abstract: A high voltage transformer for a video display apparatus includes a bobbin-wound tertiary winding. The bobbin incorporates integral nonmetallic terminal posts about which the winding segment wire is wound and terminated. The winding segments are interconnected by electrical components. The component leads incorporate a solder coating and are flattened to provide a large bonding area with the wire on the terminal posts. The component lead overlays the winding segment wire and is joined thereto by a fusion bonding process. The fusion bonding removes the wire insulations and melts the component lead solder coating to form a reflow solder joint.

Abstract: A semiconductor wafer is appropriately doped to create a P-N or P-I-N junction, and metallized on both its planar surfaces with electrode material. The wafer is then bonded to a second similarly processed wafer. Without damaging the semiconductor material, the stacked wafer is processed so as to delineate a plurality of diodes on each side of the center metallization, such that the diodes on each side are registered with each other. The center metallization is then cut so as to yield a plurality of stacked semiconductor diodes.

Abstract: A microwave frequency discriminator comprising a field effect transistor (FET) amplifier including an electronically variable capacitor (varactor), a biasing circuit and a detector. The FET is biased to generate an output RF signal within a predetermined frequency bandwidth in response to an input RF signal of substantially constant power level. The variable capacitor is biased to electronically provide a predetermined impedance to the transistor to augment the frequency roll-off characteristic of the FET. The biasing circuit is used to electronically match the impedance of the FET output to the input of the detector. At such impedance conditions the dc output voltage of the detector varies substantially linearly throughout the frequency bandwidth as a function of the frequency of the input RF signal, approximating the characteristic of a frequency discriminator.

Abstract: An improved means for interconnecting a semiconductor array to a carrier wherein the array comprises a plurality of MESFET transistors each having a distinct gate pad and a distinct drain pad, the improvement comprising a bilaterally symmetric conductive member connecting a plurality of pads, for example gate pads, to a common bus bar located on the carrier and a bilaterally symmetric conductive member connecting a plurality of pads, for example drain pads, to another common bus bar located on the carrier, wherein a length for each conductive member determines and provides a value of inductance at the operating frequency of the array which is substantially the same from the bus bar to each connected pad.

Abstract: A variable feedback and tuning capacitor, which is fabricated from a brac with bendable metallic prongs, is attached to the input transmission line of a microwave transistor amplifier. The prongs are placed in close proximity to the collector pad metalization of the carrier and provide a convenient and novel means for RF tuning the amplifier after the transistor is carrier mounted and DC tested.