Patents by Inventor Edward P. Smith
Edward P. Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240085623Abstract: According to various embodiments, an array of elements forms an artificially-structured material. The artificially-structured material can also include an array of tuning mechanisms included as part of the array of elements that are configured to change material properties of the artificially-structured material on a per-element basis. The tuning mechanisms can change the material properties of the artificially-structured material by changing operational properties of the elements in the array of elements on a per-element basis based on one or a combination of stimuli detected by sensors included in the array of tuning mechanisms, programmable circuit modules included as part of the array of tuning mechanisms, data stored at individual data stores included as part of the array of tuning mechanisms, and communications transmitted through interconnects included as part of the array of elements.Type: ApplicationFiled: September 20, 2023Publication date: March 14, 2024Inventors: Daniel Arnitz, Patrick Bowen, Seyedmohammadreza Faghih Imani, Joseph Hagerty, Roderick A. Hyde, Edward K.Y. Jung, Guy S. Lipworth, Nathan P. Myhrvold, David R. Smith, Clarence T. Tegreene, Yaroslav A. Urzhumov, Lowell L. Wood, JR.
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Patent number: 11598673Abstract: A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.Type: GrantFiled: November 20, 2020Date of Patent: March 7, 2023Assignee: Raytheon CompanyInventors: David R. Rhiger, Edward P. Smith, Jamal I. Mustafa
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Patent number: 11588068Abstract: A photo detector having a substrate and a first structure formed on the substrate. The first structure includes an emitter layer formed on the substrate and a base layer formed on the emitter layer. Further, the first structure includes a collector layer formed on the base layer. The collector layer has a plasmonic structure. The plasmonic structure includes a first plurality of mesa structures. Each of the mesa structures of the first plurality of mesa structures includes a second plurality of mesa structures having ridges arranged in a regularly repeating pattern.Type: GrantFiled: November 20, 2020Date of Patent: February 21, 2023Assignee: RAYTHEON COMPANYInventors: Jamal Mustafa, Edward P. Smith, Bradly Eachus
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Patent number: 11374050Abstract: A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.Type: GrantFiled: July 27, 2020Date of Patent: June 28, 2022Assignee: Raytheon CompanyInventors: Michael J. Batinica, Bradly Eachus, Edward P. Smith
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Publication number: 20220163397Abstract: A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.Type: ApplicationFiled: November 20, 2020Publication date: May 26, 2022Applicant: Raytheon CompanyInventors: David R. Rhiger, Edward P. Smith, Jamal I. Mustafa
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Publication number: 20220165903Abstract: A photo detector having a substrate and a first structure formed on the substrate. The first structure includes an emitter layer formed on the substrate and a base layer formed on the emitter layer. Further, the first structure includes a collector layer formed on the base layer. The collector layer has a plasmonic structure. The plasmonic structure includes a first plurality of mesa structures. Each of the mesa structures of the first plurality of mesa structures includes a second plurality of mesa structures having ridges arranged in a regularly repeating pattern.Type: ApplicationFiled: November 20, 2020Publication date: May 26, 2022Applicant: Raytheon CompanyInventors: Jamal Mustafa, Edward P. Smith, Bradly Eachus
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Publication number: 20220028917Abstract: A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.Type: ApplicationFiled: July 27, 2020Publication date: January 27, 2022Applicant: Raytheon CompanyInventors: Michael J. Batinica, Bradly Eachus, Edward P. Smith
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Patent number: 10199520Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.Type: GrantFiled: June 5, 2018Date of Patent: February 5, 2019Assignee: Raytheon CompanyInventors: Edward P. Smith, Borys P. Kolasa, Paul M. Alcorn
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Patent number: 10115764Abstract: In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels.Type: GrantFiled: August 15, 2011Date of Patent: October 30, 2018Assignee: RAYTHEON COMPANYInventors: Justin G. A. Wehner, Edward P. Smith
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Publication number: 20180286996Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.Type: ApplicationFiled: June 5, 2018Publication date: October 4, 2018Applicant: Raytheon CompanyInventors: Edward P. Smith, Borys P. Kolasa, Paul M. Alcorn
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Patent number: 10014424Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.Type: GrantFiled: February 24, 2015Date of Patent: July 3, 2018Assignee: RAYTHEON COMPANYInventors: Edward P. Smith, Borys P. Kolasa, Paul M. Alcorn
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Patent number: 9929291Abstract: A photo-detector having a photonic crystal structure for absorbing photons passing perpendicular to a surface of the photo-detector and a plasmonic resonance structure for absorbing photons passing along the surface of the photo-detector.Type: GrantFiled: February 6, 2014Date of Patent: March 27, 2018Assignee: RAYTHEON COMPANYInventors: Edward P. Smith, Anne Itsuno, Justin Gordon Adams Wehner
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Patent number: 9536917Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).Type: GrantFiled: November 19, 2013Date of Patent: January 3, 2017Assignee: RAYTHEON COMPANYInventors: Justin Gordon Adams Wehner, Edward P. Smith, Stephanie Bostwick
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Publication number: 20150263204Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.Type: ApplicationFiled: February 24, 2015Publication date: September 17, 2015Applicant: RAYTHEON COMPANYInventors: Edward P. Smith, Borys P. Kolasa, Paul M. Alcorn
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Publication number: 20150221796Abstract: A photo-detector having a photonic crystal structure for absorbing photons passing perpendicular to a surface of the photo-detector and a plasmonic resonance structure for absorbing photons passing along the surface of the photo-detector.Type: ApplicationFiled: February 6, 2014Publication date: August 6, 2015Applicant: RAYTHEON COMPANYInventors: Edward P. Smith, Anne Itsuno, Justin Gordon Adams Wehner
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Publication number: 20150137295Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).Type: ApplicationFiled: November 19, 2013Publication date: May 21, 2015Applicant: RAYTHEON COMPANYInventors: Justin Gordon Adams Wehner, Edward P. Smith, Stephanie Bostwick
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Publication number: 20130043372Abstract: In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels.Type: ApplicationFiled: August 15, 2011Publication date: February 21, 2013Applicant: Raytheon CompanyInventors: Justin G. A. Wehner, Edward P. Smith
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Publication number: 20130009045Abstract: A unit cell for use in an imaging system may include a layer of semiconductor material and a contact formed on the layer of semiconductor material. The layer of semiconductor material may have a bandgap such that the layer of semiconductor material absorbs photons of a particular range of wavelengths, transmits photons that are not of the particular range of wavelengths, and generates a photocurrent, referenced to a ground common, in response to the absorbed photons. The layer of semiconductor material may be formed on a substrate that transmits photons incident thereon to the layer of semiconductor material. The contact may be electrically coupled to the layer of semiconductor material such that the photocurrent is conducted from one surface of the contact to an opposing surface of the contact.Type: ApplicationFiled: July 7, 2011Publication date: January 10, 2013Applicant: Raytheon CompanyInventors: Edward P. Smith, Kasey D. Smith
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Patent number: 5510078Abstract: A lining process for a pipeline or passageway employs a resin impregnated lining tube which is everted into a collapsed preliner tube in the passageway to be lined. A constraining element allows the preliner tube to expand only in the vicinity of the everting face so that a pool of resin is formed between the everting face and the preliner tuber adjacent to the constraining element. In this manner, air is prevented from communicating with the everting face.Type: GrantFiled: July 1, 1994Date of Patent: April 23, 1996Assignee: Insituform (Netherlands) B.V.Inventors: Edward P. Smith, Graham F. Towers
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Patent number: 5407630Abstract: A method for lining a passageway which includes providing a plurality of tube sections connected end to end, pulling a first tube section through the passageway in a collapsed condition and thereafter everting a second tube section into the interior of said collapsed first tube section to cause it to expand outwardly toward the interior walls of said passageway.Type: GrantFiled: April 21, 1993Date of Patent: April 18, 1995Assignee: Insituform (Netherlands) BVInventor: Edward P. Smith