Patents by Inventor Edward P. Smith

Edward P. Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240085623
    Abstract: According to various embodiments, an array of elements forms an artificially-structured material. The artificially-structured material can also include an array of tuning mechanisms included as part of the array of elements that are configured to change material properties of the artificially-structured material on a per-element basis. The tuning mechanisms can change the material properties of the artificially-structured material by changing operational properties of the elements in the array of elements on a per-element basis based on one or a combination of stimuli detected by sensors included in the array of tuning mechanisms, programmable circuit modules included as part of the array of tuning mechanisms, data stored at individual data stores included as part of the array of tuning mechanisms, and communications transmitted through interconnects included as part of the array of elements.
    Type: Application
    Filed: September 20, 2023
    Publication date: March 14, 2024
    Inventors: Daniel Arnitz, Patrick Bowen, Seyedmohammadreza Faghih Imani, Joseph Hagerty, Roderick A. Hyde, Edward K.Y. Jung, Guy S. Lipworth, Nathan P. Myhrvold, David R. Smith, Clarence T. Tegreene, Yaroslav A. Urzhumov, Lowell L. Wood, JR.
  • Patent number: 11598673
    Abstract: A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: March 7, 2023
    Assignee: Raytheon Company
    Inventors: David R. Rhiger, Edward P. Smith, Jamal I. Mustafa
  • Patent number: 11588068
    Abstract: A photo detector having a substrate and a first structure formed on the substrate. The first structure includes an emitter layer formed on the substrate and a base layer formed on the emitter layer. Further, the first structure includes a collector layer formed on the base layer. The collector layer has a plasmonic structure. The plasmonic structure includes a first plurality of mesa structures. Each of the mesa structures of the first plurality of mesa structures includes a second plurality of mesa structures having ridges arranged in a regularly repeating pattern.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: February 21, 2023
    Assignee: RAYTHEON COMPANY
    Inventors: Jamal Mustafa, Edward P. Smith, Bradly Eachus
  • Patent number: 11374050
    Abstract: A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: June 28, 2022
    Assignee: Raytheon Company
    Inventors: Michael J. Batinica, Bradly Eachus, Edward P. Smith
  • Publication number: 20220163397
    Abstract: A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 26, 2022
    Applicant: Raytheon Company
    Inventors: David R. Rhiger, Edward P. Smith, Jamal I. Mustafa
  • Publication number: 20220165903
    Abstract: A photo detector having a substrate and a first structure formed on the substrate. The first structure includes an emitter layer formed on the substrate and a base layer formed on the emitter layer. Further, the first structure includes a collector layer formed on the base layer. The collector layer has a plasmonic structure. The plasmonic structure includes a first plurality of mesa structures. Each of the mesa structures of the first plurality of mesa structures includes a second plurality of mesa structures having ridges arranged in a regularly repeating pattern.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 26, 2022
    Applicant: Raytheon Company
    Inventors: Jamal Mustafa, Edward P. Smith, Bradly Eachus
  • Publication number: 20220028917
    Abstract: A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.
    Type: Application
    Filed: July 27, 2020
    Publication date: January 27, 2022
    Applicant: Raytheon Company
    Inventors: Michael J. Batinica, Bradly Eachus, Edward P. Smith
  • Patent number: 10199520
    Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: February 5, 2019
    Assignee: Raytheon Company
    Inventors: Edward P. Smith, Borys P. Kolasa, Paul M. Alcorn
  • Patent number: 10115764
    Abstract: In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels.
    Type: Grant
    Filed: August 15, 2011
    Date of Patent: October 30, 2018
    Assignee: RAYTHEON COMPANY
    Inventors: Justin G. A. Wehner, Edward P. Smith
  • Publication number: 20180286996
    Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.
    Type: Application
    Filed: June 5, 2018
    Publication date: October 4, 2018
    Applicant: Raytheon Company
    Inventors: Edward P. Smith, Borys P. Kolasa, Paul M. Alcorn
  • Patent number: 10014424
    Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: July 3, 2018
    Assignee: RAYTHEON COMPANY
    Inventors: Edward P. Smith, Borys P. Kolasa, Paul M. Alcorn
  • Patent number: 9929291
    Abstract: A photo-detector having a photonic crystal structure for absorbing photons passing perpendicular to a surface of the photo-detector and a plasmonic resonance structure for absorbing photons passing along the surface of the photo-detector.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: March 27, 2018
    Assignee: RAYTHEON COMPANY
    Inventors: Edward P. Smith, Anne Itsuno, Justin Gordon Adams Wehner
  • Patent number: 9536917
    Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: January 3, 2017
    Assignee: RAYTHEON COMPANY
    Inventors: Justin Gordon Adams Wehner, Edward P. Smith, Stephanie Bostwick
  • Publication number: 20150263204
    Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.
    Type: Application
    Filed: February 24, 2015
    Publication date: September 17, 2015
    Applicant: RAYTHEON COMPANY
    Inventors: Edward P. Smith, Borys P. Kolasa, Paul M. Alcorn
  • Publication number: 20150221796
    Abstract: A photo-detector having a photonic crystal structure for absorbing photons passing perpendicular to a surface of the photo-detector and a plasmonic resonance structure for absorbing photons passing along the surface of the photo-detector.
    Type: Application
    Filed: February 6, 2014
    Publication date: August 6, 2015
    Applicant: RAYTHEON COMPANY
    Inventors: Edward P. Smith, Anne Itsuno, Justin Gordon Adams Wehner
  • Publication number: 20150137295
    Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).
    Type: Application
    Filed: November 19, 2013
    Publication date: May 21, 2015
    Applicant: RAYTHEON COMPANY
    Inventors: Justin Gordon Adams Wehner, Edward P. Smith, Stephanie Bostwick
  • Publication number: 20130043372
    Abstract: In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels.
    Type: Application
    Filed: August 15, 2011
    Publication date: February 21, 2013
    Applicant: Raytheon Company
    Inventors: Justin G. A. Wehner, Edward P. Smith
  • Publication number: 20130009045
    Abstract: A unit cell for use in an imaging system may include a layer of semiconductor material and a contact formed on the layer of semiconductor material. The layer of semiconductor material may have a bandgap such that the layer of semiconductor material absorbs photons of a particular range of wavelengths, transmits photons that are not of the particular range of wavelengths, and generates a photocurrent, referenced to a ground common, in response to the absorbed photons. The layer of semiconductor material may be formed on a substrate that transmits photons incident thereon to the layer of semiconductor material. The contact may be electrically coupled to the layer of semiconductor material such that the photocurrent is conducted from one surface of the contact to an opposing surface of the contact.
    Type: Application
    Filed: July 7, 2011
    Publication date: January 10, 2013
    Applicant: Raytheon Company
    Inventors: Edward P. Smith, Kasey D. Smith
  • Patent number: 5510078
    Abstract: A lining process for a pipeline or passageway employs a resin impregnated lining tube which is everted into a collapsed preliner tube in the passageway to be lined. A constraining element allows the preliner tube to expand only in the vicinity of the everting face so that a pool of resin is formed between the everting face and the preliner tuber adjacent to the constraining element. In this manner, air is prevented from communicating with the everting face.
    Type: Grant
    Filed: July 1, 1994
    Date of Patent: April 23, 1996
    Assignee: Insituform (Netherlands) B.V.
    Inventors: Edward P. Smith, Graham F. Towers
  • Patent number: 5407630
    Abstract: A method for lining a passageway which includes providing a plurality of tube sections connected end to end, pulling a first tube section through the passageway in a collapsed condition and thereafter everting a second tube section into the interior of said collapsed first tube section to cause it to expand outwardly toward the interior walls of said passageway.
    Type: Grant
    Filed: April 21, 1993
    Date of Patent: April 18, 1995
    Assignee: Insituform (Netherlands) BV
    Inventor: Edward P. Smith