Patents by Inventor Edward Paul Barth

Edward Paul Barth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low-k interlevel dielectric layer (ILD)
    Patent number: 7009280
    Abstract: An interlevel dielectric layer (ILD) comprises a low-k dielectric layer; and a low-k dielectric film, deposited under compressive stress, atop the dielectric layer. The dielectric layer comprises a low-k material, such as an organosilicon glass (OSG) or a SiCOH material. The dielectric film has a thickness, which is 2%–10% of the thickness of the dielectric layer, has a similar chemical composition to the dielectric layer, but has a different morphology than the dielectric layer. The dielectric film is deposited under compressive stress, in situ, at or near the end of the dielectric layer deposition by altering a process that was used to deposit the low-k dielectric layer.
    Type: Grant
    Filed: April 28, 2004
    Date of Patent: March 7, 2006
    Assignee: International Business Machines Corporation
    Inventors: Matthew Angyal, Edward Paul Barth, Sanjit Kumar Das, Charles Robert Davis, Habib Hichri, William Francis Landers, Jia Lee
  • Laminated diffusion barrier
    Patent number: 6726996
    Abstract: A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: April 27, 2004
    Assignee: International Business Machines Corporation
    Inventors: Edward Paul Barth, Stephan A. Cohen, Chester Dziobkowski, John Anthony Fitzsimmons, Stephen McConnell Gates, Thomas Henry Ivers, Sampath Purushothaman, Darryl D. Restaino, Horatio Seymour Wildman
  • Laminated diffusion barrier
    Publication number: 20020172811
    Abstract: A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.
    Type: Application
    Filed: May 16, 2001
    Publication date: November 21, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Edward Paul Barth, Stephan A. Cohen, Chester Dziobkowski, John Anthony Fitzsimmons, Stephen McConnell Gates, Thomas Henry Ivers, Sampath Purushothaman, Darryl D. Restaino, Horatio Seymour Wildman