Abstract: A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.

Abstract: A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.

Abstract: A method and apparatus for identifying crystal defects in emitter-base junctions of NPN bipolar transistors uses a test structure having an NP junction that can be inspected using passive voltage contrast. The test structure eliminates the collector of the transistor and simulates only the emitter and base. Eliminating the collector removes an NP junction between collector and substrate of a wafer allowing charge to flow from the substrate to emitter if the emitter-base junction is defective since only one NP junction exists in the test structure. In one embodiment, the test structures are located between dies on a wafer and may be formed in groups of several thousand.

Abstract: Embodiments of the invention include a sensor such as a capacitive sensor with improved scratch resistance. The sensor has a substrate and a layer of sensing elements formed thereon that are formed from materials having a greater mechanical firmness than conventional aluminum or other soft metal materials. Sensor interconnects also are made of such materials. The increased mechanical firmness of the sensing elements and interconnects improves the scratch and mechanical resistance thereof by reducing scratches, mechanical stress and cracks by reducing the deformation and consequently the bridge and/or gap effects of the sensing element material. Such effects plague conventional electronic devices, integrated circuits and sensors. Alternatively, the inventive sensor includes, e.g., a dielectric region operably coupled to the sensing elements and interconnects, thus forming a capacitive sensor or other electronic devices.