Abstract: A scene projector including an array of light emitting pixels, a tunable filter element, and a spatial light modulator. The tunable filter element is optically coupled to the array of light emitting pixels such that light emitted from the array of light emitting pixels is passed through the tunable filter element as filtered light. The spatial light modulator is optically coupled to the array of light emitting pixels and is configured to generate transmitted light by interacting with the filtered light to control at least one of an amplitude, a phase, and a polarization of the filtered light.

Abstract: A scene projector including an array of light emitting pixels, a tunable filter element, and a spatial light modulator. The tunable filter element is optically coupled to the array of light emitting pixels such that light emitted from the array of light emitting pixels is passed through the tunable filter element as filtered light. The spatial light modulator is optically coupled to the array of light emitting pixels and is configured to generate transmitted light by interacting with the filtered light to control at least one of an amplitude, a phase, and a polarization of the filtered light.

Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.

Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.

Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.

Abstract: An image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

Abstract: A unit cell for use in an imaging system may include an absorber layer of semiconductor material formed on a semiconductor substrate, at least one contact including semiconductor material formed on the semiconductor substrate and electrically coupled to the absorber layer, and a cap layer of semiconductor material formed on the semiconductor substrate and electrically coupled to and formed between the absorber layer and the at least one contact. The absorber layer may be configured to absorb incident photons such that the absorbed photons excite electrons in the absorber layer to generate a photocurrent. The at least one contact may be configured to conduct the photocurrent to one or more electrical components external to the unit cell. The cap layer may be configured to conduct the photocurrent between the absorber layer and the at least one contact.

Abstract: An image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.

Abstract: According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

Abstract: According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

Abstract: According to one embodiment, a position sensitive detector (PSD) comprises a plurality of layers, including a substrate layer, an absorber layer, a barrier layer, a sheet layer, and a contact layer. The absorber layer absorbs incident photons such that the absorbed photons excite positive charges and negative charges in the absorber layer. The barrier layer collects a photocurrent from the absorber layer, the photocurrent comprising either the positive charges or the negative charges. The sheet layer provides resistance to control the flow of the photocurrent between a point of incidence of the photons and a plurality of interconnect contacts. The contact layer comprises the interconnect contacts, each interconnect contact operable to conduct the photocurrent to one or more electrical components external to the PSD. The position sensitive detector facilitates determining the point of incidence of the photons according to a relative amount of photocurrent associated with each interconnect contact.

Abstract: A unit cell for use in an imaging system may include an absorber layer of semiconductor material formed on a semiconductor substrate, at least one contact including semiconductor material formed on the semiconductor substrate and electrically coupled to the absorber layer, and a cap layer of semiconductor material formed on the semiconductor substrate and electrically coupled to and formed between the absorber layer and the at least one contact. The absorber layer may be configured to absorb incident photons such that the absorbed photons excite electrons in the absorber layer to generate a photocurrent. The at least one contact may be configured to conduct the photocurrent to one or more electrical components external to the unit cell. The cap layer may be configured to conduct the photocurrent between the absorber layer and the at least one contact.