Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.

Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.

Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.

Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.

Abstract: A machine includes an internal combustion engine disposed within an engine compartment and supported on a machine frame. An exhaust stack has an inlet fluidly connected to an exhaust manifold of the internal combustion engine and an outlet in fluid communication with ambient air. A diesel particulate filter is disposed along the exhaust stack. A cooling package includes at least one heat exchanger and a blower fan. The blower fan is configured to blow cooling air from the engine compartment sequentially through the at least one heat exchanger and an outlet of the cooling package. Exhaust gas exiting the exhaust stack outlet is mixed with the cooling air exiting the cooling package outlet in a high temperature zone surrounding the exhaust stack outlet to form a fluid mixture, and a temperature of the fluid mixture at a perimeter of the high temperature zone is below 200 degrees Celsius.

Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.

Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.

Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.

Abstract: A skid steer machine includes an operator cage supported on a skid steer machine frame, a pair of lift arms pivotably attached to the skid steer machine frame behind the operator cage and extending longitudinally on both sides of the operator cage, and a rear mounted engine compartment supported on the skid steer machine frame. The rear mounted engine compartment includes an internal combustion engine, a diesel particulate filter fluidly connected to the internal combustion engine and positioned between the internal combustion engine and the operator cage, and a cooling package having a predominantly horizontal orientation. The cooling package is at a higher location within the rear mounted engine compartment than the diesel particulate filter.

Abstract: A machine includes an internal combustion engine disposed within an engine compartment and supported on a machine frame. An exhaust stack has an inlet fluidly connected to an exhaust manifold of the internal combustion engine and an outlet in fluid communication with ambient air. A diesel particulate filter is disposed along the exhaust stack, and the machine includes an active regeneration system for regenerating the diesel particulate filter. A cooling package including at least one heat exchanger and a blower fan. The blower fan is configured to blow cooling air from the engine compartment sequentially through the at least one heat exchanger and an outlet of the cooling package. Exhaust gas exiting the exhaust stack outlet is mixed with the cooling air exiting the cooling package outlet in a high temperature zone surrounding the exhaust stack outlet to form a fluid mixture.

Abstract: A machine includes an internal combustion engine disposed within an engine compartment and supported on a machine frame. An exhaust stack has an inlet fluidly connected to an exhaust manifold of the internal combustion engine and an outlet in fluid communication with ambient air. A diesel particulate filter is disposed along the exhaust stack, and the machine includes an active regeneration system for regenerating the diesel particulate filter. A cooling package including at least one heat exchanger and a blower fan. The blower fan is configured to blow cooling air from the engine compartment sequentially through the at least one heat exchanger and an outlet of the cooling package. Exhaust gas exiting the exhaust stack outlet is mixed with the cooling air exiting the cooling package outlet in a high temperature zone surrounding the exhaust stack outlet to form a fluid mixture.

Abstract: A skid steer machine includes an operator cage supported on a skid steer machine frame. A pair of lift arms are pivotably attached to the skid steer machine frame behind the operator cage and extend longitudinally on both sides of the operator cage. A cooling package includes a first heat exchanger and a second heat exchanger, and a blower fan configured to blow air in parallel through the first heat exchanger and the second heat exchanger. The cooling package is pivotably mounted to the skid steer machine frame using at least one pivotable mounting assembly and is pivotable between an operational position and a maintenance position. At least one non-metallic vibration isolator is positioned between the cooling package and the skid steer machine frame.

Abstract: A skid steer machine includes an operator cage supported on a skid steer machine frame, a pair of lift arms pivotably attached to the skid steer machine frame behind the operator cage and extending longitudinally on both sides of the operator cage, and a rear mounted engine compartment supported on the skid steer machine frame. The rear mounted engine compartment includes an internal combustion engine, a diesel particulate filter fluidly connected to the internal combustion engine and positioned between the internal combustion engine and the operator cage, and a cooling package having a predominantly horizontal orientation. The cooling package is at a higher location within the rear mounted engine compartment than the diesel particulate filter.

Abstract: A machine includes an internal combustion engine disposed within an engine compartment and supported on a machine frame. An exhaust stack has an inlet fluidly connected to an exhaust manifold of the internal combustion engine and an outlet in fluid communication with ambient air. A diesel particulate filter is disposed along the exhaust stack. A cooling package includes at least one heat exchanger and a blower fan. The blower fan is configured to blow cooling air from the engine compartment sequentially through the at least one heat exchanger and an outlet of the cooling package. Exhaust gas exiting the exhaust stack outlet is mixed with the cooling air exiting the cooling package outlet in a high temperature zone surrounding the exhaust stack outlet to form a fluid mixture, and a temperature of the fluid mixture at a perimeter of the high temperature zone is below 200 degrees Celsius.

Abstract: In a method for making a low-defect single-crystal GaN film, an epitaxial nitride layer is deposited on a substrate. A first GaN layer is grown on the epitaxial nitride layer by HVPE under a growth condition that promotes the formation of pits, wherein after growing the first GaN layer the GaN film surface morphology is rough and pitted. A second GaN layer is grown on the first GaN layer to form a GaN film on the substrate. The second GaN layer is grown by HVPE under a growth condition that promotes filling of the pits, and after growing the second GaN layer the GaN film surface morphology is essentially pit-free. A GaN film having a characteristic dimension of about 2 inches or greater, and a thickness normal ranging from approximately 10 to approximately 250 microns, includes a pit-free surface, the threading dislocation density being less than 1×108 cm?2.

Abstract: In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.