Patents by Inventor Edward R. Engbrecht
Edward R. Engbrecht has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11950510Abstract: A superconductor junction includes a normal metal layer having a first side and a second side, an insulating layer overlying the second side of the normal metal layer, and a first superconductor layer formed of a first superconductor material that overlies a side of the insulating layer opposite the side that overlies the normal metal layer. The superconductor junction further includes a second superconductor layer formed of a second superconductor material with a first side overlying a side of the first superconductor material opposite the side that overlies the insulating layer. The second superconductor material has a higher diffusion coefficient than the first superconductor material and/or the second superconductor material has a lower recombination coefficient than the first superconductor metal layer. A normal metal layer quasiparticle trap is coupled to a second side of the second superconductor layer.Type: GrantFiled: February 3, 2022Date of Patent: April 2, 2024Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Aaron Ashley Hathaway, Edward R. Engbrecht, John X. Przybysz, Robert Miles Young
-
Patent number: 11839165Abstract: A solid state cooler device is disclosed that comprises a first normal metal pad, a first aluminum layer and a second aluminum layer disposed on the first normal metal pad and separated from one another by a gap, a first aluminum oxide layer formed on the first aluminum layer, and a second aluminum oxide layer formed on the second aluminum layer, and a first superconductor pad disposed on the first aluminum oxide layer and a second superconductor pad disposed on the second aluminum oxide layer. The device further comprises a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad, wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad.Type: GrantFiled: February 1, 2023Date of Patent: December 5, 2023Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Aaron Ashley Hathaway, John X. Przybysz, Robert Miles Young, Edward R. Engbrecht
-
Publication number: 20230247905Abstract: A superconductor junction includes a normal metal layer having a first side and a second side, an insulating layer overlying the second side of the normal metal layer, and a first superconductor layer formed of a first superconductor material that overlies a side of the insulating layer opposite the side that overlies the normal metal layer. The superconductor junction further includes a second superconductor layer formed of a second superconductor material with a first side overlying a side of the first superconductor material opposite the side that overlies the insulating layer. The second superconductor material has a higher diffusion coefficent than the first superconductor material and/or the second superconductor material has a lower recombination coefficent than the first superconductor metal layer. A normal metal layer quasiparticle trap is coupled to a second side of the second superconductor layer.Type: ApplicationFiled: February 3, 2022Publication date: August 3, 2023Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: AARON ASHLEY HATHAWAY, EDWARD R. ENGBRECHT, JOHN X. PRZYBYSZ, ROBERT MILES YOUNG
-
Publication number: 20230180634Abstract: A solid state cooler device is disclosed that comprises a first normal metal pad, a first aluminum layer and a second aluminum layer disposed on the first normal metal pad and separated from one another by a gap, a first aluminum oxide layer formed on the first aluminum layer, and a second aluminum oxide layer formed on the second aluminum layer, and a first superconductor pad disposed on the first aluminum oxide layer and a second superconductor pad disposed on the second aluminum oxide layer. The device further comprises a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad, wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad.Type: ApplicationFiled: February 1, 2023Publication date: June 8, 2023Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: AARON ASHLEY HATHAWAY, JOHN X. PRZYBYSZ, ROBERT MILES YOUNG, EDWARD R. ENGBRECHT
-
Patent number: 11600760Abstract: A solid state cooler device is disclosed that comprises a first normal metal pad, a first aluminum layer and a second aluminum layer disposed on the first normal metal pad and separated from one another by a gap, a first aluminum oxide layer formed on the first aluminum layer, and a second aluminum oxide layer formed on the second aluminum layer, and a first superconductor pad disposed on the first aluminum oxide layer and a second superconductor pad disposed on the second aluminum oxide layer. The device further comprises a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad, wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad.Type: GrantFiled: November 26, 2019Date of Patent: March 7, 2023Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Aaron Ashley Hathaway, John X. Przybysz, Robert Miles Young, Edward R. Engbrecht
-
Patent number: 11333413Abstract: A solid state cooler device is provided that includes a substrate, a first and second conductive pad disposed on the substrate, a first and second superconductor pad each having a side with a plurality of conductive pad contact interfaces spaced apart from one another and being in contact with a surface of respective first and second conductive pads, and a first and second insulating layer disposed between respective first and second superconductor pads, and respective ends of a normal metal layer. A bias voltage is applied between one of a first conductive pad or first superconductor pad and one of the second conductive pad or the second superconductor pad to remove hot electrons from the normal metal layer, and the contact area of the plurality of first and second conductive pad contact interfaces inhibits the transfer of heat back to the first and second superconductor pads.Type: GrantFiled: August 28, 2019Date of Patent: May 17, 2022Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Robert Miles Young, Aaron Ashley Hathaway, John X. Przybysz, Gregory R. Boyd, Zachary A. Stegen, Edward R. Engbrecht, Aaron A. Pesetski, Marc Eisenzweig Sherwin
-
Publication number: 20210257533Abstract: A solid state cooler device is disclosed that comprises a first normal metal pad, a first aluminum layer and a second aluminum layer disposed on the first normal metal pad and separated from one another by a gap, a first aluminum oxide layer formed on the first aluminum layer, and a second aluminum oxide layer formed on the second aluminum layer, and a first superconductor pad disposed on the first aluminum oxide layer and a second superconductor pad disposed on the second aluminum oxide layer. The device further comprises a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad, wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad.Type: ApplicationFiled: November 26, 2019Publication date: August 19, 2021Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: AARON ASHLEY HATHAWAY, JOHN X. PRZYBYSZ, ROBERT MILES YOUNG, EDWARD R. ENGBRECHT
-
Patent number: 10998485Abstract: A solid state cooler device is disclosed that includes a first superconductor shunt, a first normal metal pad disposed on the first superconductor shunt, and a first insulator layer and a second insulator layer disposed on the normal metal pad and separated from one another by a gap. The solid state cooler device also includes a first superconductor pad disposed on the first insulator layer and a second superconductor pad disposed on the second insulator layer, a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad. Hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad, wherein the first superconductor shunt facilitates even current distribution through the device.Type: GrantFiled: January 13, 2020Date of Patent: May 4, 2021Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: John X. Przybysz, Robert M. Young, Aaron Ashley Hathaway, Edward R. Engbrecht, Monica P. Lilly
-
Publication number: 20210063060Abstract: A solid state cooler device is provided that includes a substrate, a first and second conductive pad disposed on the substrate, a first and second superconductor pad each having a side with a plurality of conductive pad contact interfaces spaced apart from one another and being in contact with a surface of respective first and second conductive pads, and a first and second insulating layer disposed between respective first and second superconductor pads, and respective ends of a normal metal layer. A bias voltage is applied between one of a first conductive pad or first superconductor pad and one of the second conductive pad or the second superconductor pad to remove hot electrons from the normal metal layer, and the contact area of the plurality of first and second conductive pad contact interfaces inhibits the transfer of heat back to the first and second superconductor pads.Type: ApplicationFiled: August 28, 2019Publication date: March 4, 2021Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Robert Miles Young, Aaron Ashley Hathaway, John X. Przybysz, Gregory R. Boyd, Zachary A. Stegen, Edward R. Engbrecht, Aaron A. Pesetski, Marc Eisenzweig Sherwin
-
Patent number: 8796150Abstract: A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.Type: GrantFiled: January 24, 2011Date of Patent: August 5, 2014Assignee: International Business Machines CorporationInventors: Hakeem B. S. Akinmade-Yusuff, Samuel Sung Shik Choi, Edward R. Engbrecht, John A. Fitzsimmons
-
Publication number: 20120187546Abstract: A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.Type: ApplicationFiled: January 24, 2011Publication date: July 26, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hakeem B.S. Akinmade-Yusuff, Samuel Sung Shik Choi, Edward R. Engbrecht, John A. Fitzsimmons
-
Patent number: 7144803Abstract: The present invention includes methods for forming a boron carbo-nitride layer. Additional embodiments include thermal chemical vapor deposition methods for forming a boron carbo-nitride layer. Also integrated circuit devices with a boron carbo-nitride layer are disclosed.Type: GrantFiled: April 16, 2004Date of Patent: December 5, 2006Assignee: Semiconductor Research CorporationInventors: Edward R. Engbrecht, John G. Ekerdt, Yang-Ming Sun, Kurt H. Junker
-
Publication number: 20040259353Abstract: The present invention includes methods for forming a boron carbo-nitride layer. Additional embodiments include thermal chemical vapor deposition methods for forming a boron carbo-nitride layer. Also integrated circuit devices with a boron carbo-nitride layer are disclosed.Type: ApplicationFiled: April 16, 2004Publication date: December 23, 2004Inventors: Edward R. Engbrecht, John G. Ekerdt, Yang-Ming Sun, Kurt H. Junker