Patents by Inventor Edward R. Gertner

Edward R. Gertner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor
    Patent number: 5306660
    Abstract: Method and apparatus for vapor phase free methyl radical transport of indium dopant species for precise predetermined reproducible doping concentrations to control electrical properties for MOCVD grown materials.
    Type: Grant
    Filed: February 19, 1991
    Date of Patent: April 26, 1994
    Assignee: Rockwell International Corporation
    Inventors: Charles R. Younger, Shawn L. Johnston, Stuart J. C. Irvine, Edward R. Gertner, Kenneth L. Hess
  • Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
    Patent number: 5202283
    Abstract: Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials.
    Type: Grant
    Filed: February 19, 1991
    Date of Patent: April 13, 1993
    Assignee: Rockwell International Corporation
    Inventors: Charles R. Younger, Kenneth L. Hess, Stuart J. C. Irvine, Edward R. Gertner, Shawn L. Johnston
  • Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique
    Patent number: 4075043
    Abstract: A method of making a junction in semiconductive materials to improve the spectral response of the junction in photovoltaic detectors. A first layer of semiconductive material is grown, by epitaxy technique, on a substrate of semiconductive material of the same conductivity type. Growth of the first layer is discontinued and the temperature is changed. Then a second layer of opposite conductivity type is grown on the first layer.
    Type: Grant
    Filed: September 1, 1976
    Date of Patent: February 21, 1978
    Assignee: Rockwell International Corporation
    Inventors: John Elwood Clarke, Austin M. Andrews, II, Edward R. Gertner, Joseph T. Longo, John G. Pasko
  • High speed infrared detector
    Patent number: 4053919
    Abstract: A high speed infrared detector for use as a receiver in a 10.6.mu.m communication system and being composed of a Pb.sub.0.8 Sn.sub.0.2 Te crystalline substrate, a 10.6.mu.m absorbing layer on said substrate composed of a p-type Pb.sub.0.8 Sn.sub.0.2 Te material and a 10.6.mu.m transparent layer disposed on said first layer and composed of a Pb.sub.0.9 Sn.sub.0.1 Te n-type material.
    Type: Grant
    Filed: August 18, 1976
    Date of Patent: October 11, 1977
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Austin M. Andrews, II, John E. Clarke, Joseph T. Longo, Edward R. Gertner
  • Inverted heterojunction photodiode
    Patent number: 4021836
    Abstract: An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 .mu.m portion of the infrared spectrum and operable above 77.degree. K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.sub..90 Sn.sub..10 Te material on said substrate and a second active layer of a Pb.sub..80 Sn.sub..20 Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy.
    Type: Grant
    Filed: April 12, 1976
    Date of Patent: May 3, 1977
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Austin M. Andrews, II, John E. Clarke, Edward R. Gertner, Joseph T. Longo, Richard C. Eden