Abstract: An improved apparatus for annealing an ion-implanted semiconductor sample duces the deleterious side effects otherwise associated with the process. A semiconductor sample, fabricated, for example, from indium phosphide or gallium arsenide, is set upon the fingers of a carrier which is displaced to the interior of an elongate furnace having its internal temperature maintained at the proper annealing temperature. Next, the fingers are rotated and the sample is placed on a number of razor blade-like edges extending up from an internal rack. The carrier is withdrawn and the sample is quickly brought to the annealing temperature for the precise period of time usually no more than 20 seconds. After the exact annealing period, the carrier is reintroduced and the fingers are rotated to lift the sample from the rack and the sample is withdrawn.