Patents by Inventor Edward S. Cheng

Edward S. Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10502622
    Abstract: A custom application-specific integrated circuit (ASIC) may provide strong signal integrity while reducing the load to a thermal system. Control and analog-to-digital conversion may be pushed into components close to the detector to maximize signal integrity. Processing functions may be performed at relatively high temperature, or the highest allowable temperatures, simplifying the system-level thermal design by not cooling components that do not require such cooling to function.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: December 10, 2019
    Inventors: Brian S. Smith, Markus Loose, Atul Joshi, Greg T. Alkire, Daniel P. Kelly, Edward S. Cheng
  • Publication number: 20180003559
    Abstract: A custom application-specific integrated circuit (ASIC) may provide strong signal integrity while reducing the load to a thermal system. Control and analog-to-digital conversion may be pushed into components close to the detector to maximize signal integrity. Processing functions may be performed at relatively high temperature, or the highest allowable temperatures, simplifying the system-level thermal design by not cooling components that do not require such cooling to function.
    Type: Application
    Filed: June 21, 2017
    Publication date: January 4, 2018
    Inventors: BRIAN S. SMITH, MARKUS LOOSE, ATUL JOSHI, GREG T. ALKIRE, DANIEL P. KELLY, EDWARD S. CHENG
  • Patent number: 6420691
    Abstract: A charge-coupled device with a low-emissivity metal layer located between a sensing layer and a substrate provides reduction in ghost images. In a typical charge-coupled device of a silicon sensing layer, a silicon dioxide insulating layer, with a glass substrate and a metal carrier layer, a near-infrared photon, not absorbed in the first pass, enters the glass substrate, reflects from the metal carrier, thereby returning far from the original pixel in its entry path. The placement of a low-emissivity metal layer between the glass substrate and the sensing layer reflects near infrared photons before they reach the substrate so that they may be absorbed in the silicon nearer the pixel of their points of entry so that the reflected ghost image is coincident with the primary image for a sharper, brighter image.
    Type: Grant
    Filed: July 8, 1999
    Date of Patent: July 16, 2002
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Edwin D. Loh, Edward S. Cheng