Patents by Inventor Edward S. Murdock

Edward S. Murdock has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6738236
    Abstract: Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic. (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact with the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.
    Type: Grant
    Filed: May 6, 1999
    Date of Patent: May 18, 2004
    Assignee: Seagate Technology LLC
    Inventors: Sining Mao, Anthony M. Mack, Brenda A. Everitt, Edward S. Murdock, Zheng Gao
  • Patent number: 6667616
    Abstract: A spin valve sensor comprising a ferromagnetic free layer, a ferromagnetic pinned layer, a layer of non-ferromagnetic material positioned between the free layer and the pinned layer, and an antitferromagnetic pinning layer positioned adjacent to the pinned layer such that the pinning layer is in direct contact with the pinned layer. The free layer comprises a multi-layer stack including a non-magnetic insulating spacer positioned between a first and a second ferromagnetic sublayer. The non-magnetic insulating spacer provides a specular electron scattering effect. The first and the second ferromagnetic sublayers each have passive end regions separated by a central active region. The spin valve sensor further includes bias means positioned between the first and the second ferromagnetic sublayers in the passive end regions.
    Type: Grant
    Filed: September 2, 1999
    Date of Patent: December 23, 2003
    Assignee: Seagate Technology LLC
    Inventors: Alexander M. Shukh, Edward S. Murdock, Anthony M. Mack
  • Patent number: 6621659
    Abstract: A giant magnetoresistance recording head includes a writer having a top pole, a shared pole, a conductive coil and a write gap region. The top pole includes a first top pole piece and a second top pole piece. The second top pole piece is formed at least in part over the first top pole piece and is recessed from the air bearing surface. The first top pole piece is formed over a top flat surface of the shared pole and is separated from the shared pole by the write gap region. The shared pole has a recess on the top surface. The recess is placed under the top pole and filled with a non-magnetic material. The non-magnetic recess in the shared pole defines the throat height of the writer.
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: September 16, 2003
    Assignee: Seagate Technology LLC
    Inventors: Alexander M. Shukh, Edward S. Murdock
  • Patent number: 6548114
    Abstract: A method of fabricating a spin valve sensor includes sequentially depositing, without breaking vacuum, a seed layer and an antiferromagnetic layer. Sequentially depositing the seed layer and the antiferromagnetic layer includes depositing a seed layer on a substrate; depositing a Mn-alloy layer of the antiferromagnetic layer directly on top of the seed layer; and depositing a buffer layer of the antiferromagnetic layer directly on top of the Mn-alloy layer. The seed layer, the Mn-alloy layer and the buffer layer are annealed. After annealing, a portion of the buffer layer is etched and a synthetic antiferromagnetic layer is deposited on top of the buffer layer. A spacer layer is deposited on top of the synthetic antiferromagnetic layer, and a free layer is deposited on top of the spacer layer.
    Type: Grant
    Filed: July 17, 2001
    Date of Patent: April 15, 2003
    Assignee: Seagate Technology LLC
    Inventors: Sining Mao, Anthony M. Mack, Brenda A. Everitt, Edward S. Murdock, Zheng Gao
  • Publication number: 20030039065
    Abstract: A magnetic recording head having an air bearing surface comprises a writer having a substantially planar single piece top pole, a shared pole and a conductive coil. The top pole and shared pole are separated by a write gap region. A magnetic stud is positioned adjacent the write gap region near the air bearing surface. The magnetic stud provides a uniform magnetic flux supply to the write gap region. The magnetic stud has a variable height along the air bearing surface. An inner surface of the magnetic stud substantially conforms to an outer surface of the conductive coil. The shared pole includes a recess, and at least a portion of the conductive coil is positioned in the recess. The recess in the shared pole is filled with an insulator that substantially surrounds the portion of the conductive coil positioned in the recess. A capping layer is formed on the portion of the conductive coil positioned in the recess.
    Type: Application
    Filed: October 15, 2002
    Publication date: February 27, 2003
    Inventors: Alexander M. Shukh, Edward S. Murdock, Steven A. Mastain, James K. Price
  • Patent number: 6477007
    Abstract: A magnetic recording head having an air bearing surface comprises a writer having a substantially planar single piece top pole, a shared pole and a conductive coil. The top pole and shared pole are separated by a write gap region. A magnetic stud is positioned adjacent the write gap region near the air bearing surface. The magnetic stud provides a uniform magnetic flux supply to the write gap region. The magnetic stud has a variable height along the air bearing surface. An inner surface of the magnetic stud substantially conforms to an outer surface of the conductive coil. The shared pole includes a recess, and at least a portion of the conductive coil is positioned in the recess. The recess in the shared pole is filled with an insulator that substantially surrounds the portion of the conductive coil positioned in the recess. A capping layer is formed on the portion of the conductive coil positioned in the recess.
    Type: Grant
    Filed: August 29, 2000
    Date of Patent: November 5, 2002
    Assignee: Seagate Technology LLC
    Inventors: Alexander M. Shukh, Edward S. Murdock, Steven A. Mastain, James K. Price
  • Patent number: 6462919
    Abstract: A spin valve sensor is disclosed that comprises a first layer of ferromagnetic material and a second layer of ferromagnetic material. A first layer of non-ferromagnetic material is positioned between the first and second layers of ferromagnetic material. A pinning layer is positioned adjacent to the first layer of ferromagnetic material such that the pinning layer is in contact with the first layer of ferromagnetic material. The spin valve includes synthetic antiferromagnetic bias means extending over passive end regions of the second layer of ferromagnetic material for producing a longitudinal bias in the passive end regions of a level sufficient to maintain the passive end regions in a single domain state. A method for forming a spin valve sensor with exchange tabs is also disclosed.
    Type: Grant
    Filed: November 18, 1999
    Date of Patent: October 8, 2002
    Assignee: Seagate Technology LLC
    Inventors: Anthony M. Mack, Sining Mao, Michael A. Seigler, Nurul Amin, Taras G. Pokhil, Ananth Naman, Jin Li, Zheng Gao, Edward S. Murdock, Jumna P. Ramdular, Timothy Radke
  • Patent number: 6396670
    Abstract: A method and apparatus for dissipating heat generated in a sensor element of a vertical magnetoresistive recording head or flux guide magnetoresistive recording head having a recess formed in the lower and/or upper magnetic shields for enhancing efficiency during reading data from a magnetic medium. Heat is dissipated through a non-magnetic metal filler layer (10, 12) formed in the shield recesses (140) between an upper (2) or lower (6) metal shield and a sensor element (4) comprising a magnetoresistive head structure. The metal filler (10, 12) must be non-magnetic, must avoid an electrical short between the sensor element and the upper (2) or lower (6) magnetic shield, and must be compatible with the adjacent shield in terms of adhesion thereto and the thermal expansion coefficient thereof. An insulator layer (11, 20) comprising an electrical insulator is formed between the sensor element (4) and the metal filler (10, 12) to insure electrical insulation.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: May 28, 2002
    Assignee: Seagate Technology LLC
    Inventor: Edward S. Murdock
  • Publication number: 20020024780
    Abstract: Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact wish the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.
    Type: Application
    Filed: July 17, 2001
    Publication date: February 28, 2002
    Inventors: Sining Mao, Anthony M. Mack, Brenda A. Everitt, Edward S. Murdock, Zheng Gao
  • Patent number: 6256176
    Abstract: A magnetic read head (30) for use in a magnetic data storage and retrieval system has a first current contact (40), a second current contact (42), a magnetoresistive read sensor (34), and a demagnetization field balance element (50). Positioned between the first and second current contacts (40, 42) are both the magnetoresistive read sensor (34) and the demagnetization field balance element (50). The demagnetization field balance element (50) is both electrically isolated from and magnetically coupled to the magnetoresistive read sensor (34).
    Type: Grant
    Filed: July 27, 1999
    Date of Patent: July 3, 2001
    Assignee: Seagate Technology LLC
    Inventors: Sining Mao, Nurul Amin, Edward S. Murdock
  • Patent number: 6134090
    Abstract: A spin valve sensor is constructed with an electrically conductive antiferromagnetic pinning layer. A first ferromagnetic layer is placed proximate the pinning layer. A second ferromagnetic layer is included with a non-ferromagnetic electrically conductive layer placed between the first and second ferromagnetic layers. A boundary layer of electrically insulating material is placed proximate to the second layer of ferromagnetic material opposite the non-ferromagnetic electrically conductive layer. Preferred embodiments exhibit an enhanced giant magnetoresistive (GMR) effect presumably due to scattering that is more specular at the interface with the electrically insulating material.
    Type: Grant
    Filed: September 15, 1998
    Date of Patent: October 17, 2000
    Assignee: Seagate Technology LLC
    Inventors: Sining Mao, Edward S. Murdock
  • Patent number: 5764056
    Abstract: A spin valve sensor and a method of fabricating the same are disclosed. The spin valve sensor includes a first layer of ferromagnetic material and a second layer of ferromagnetic material, with the second layer of ferromagnetic material having a thickness of less than about 100 .ANG.. A first layer of non-ferromagnetic conducting material is positioned between the first and second layers of ferromagnetic material. A NiMn pinning layer is positioned adjacent to the second layer of ferromagnetic material such that the pinning layer is in contact with the second layer of ferromagnetic material, wherein the NiMn pinning layer has a thickness of less than about 200 .ANG. and provides a pinning field for pinning a magnetization of the second layer of ferromagnetic material in a first direction.
    Type: Grant
    Filed: May 16, 1996
    Date of Patent: June 9, 1998
    Assignee: Seagate Technology, Inc.
    Inventors: Sining Mao, Nurul Amin, Sunita B. Gangopadhyay, Edward S. Murdock
  • Patent number: 5748412
    Abstract: A magnetoresistive head assembly includes a magnetoresistive sensor element, detection circuitry and first and second electrical conductors electrically connecting the magnetoresistive sensor element and the detection circuitry. A device exhibiting a non-linear voltage-current relationship is electrically coupled between the first and second electrical conductors. The device has a resistance which varies in relationship to an electrical potential between the first and second electrical conductors.
    Type: Grant
    Filed: December 20, 1995
    Date of Patent: May 5, 1998
    Assignee: Seagate Technology, Inc.
    Inventors: Edward S. Murdock, John C. Heitke, Kevin J. Schulz