Abstract: A silicon carbide device includes a silicon carbide substrate, a contact layer located on the silicon carbide substrate and including nickel and silicon, a barrier layer structure including titanium and tungsten, and a metallization layer comprising copper, wherein the contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure, wherein the barrier layer structure is located between the silicon carbide substrate and the metallization layer, wherein the metallization layer is configured as a contact pad of the silicon carbide device.

Abstract: An adjustable, louvered awning incorporating a combination angle adjustment and locking mechanism. The mechanism enables the awning's movable vanes to be securely locked in a plurality of positions selected by the operator.