Abstract: A semiconductor processing apparatus includes an upper electrode and a substrate on a lower electrode disposed inside the process chamber, a first power generator configured to provide a low-frequency signal to the lower electrode, wherein the low-frequency signal varies between a reference voltage and a first voltage at intervals of a first cycle, a second power generator configured to provide a high-frequency signal to the lower electrode, wherein the high-frequency signal has a sinusoidal waveform that oscillates at intervals of a second cycle shorter than the first cycle, and a direct-current (DC) power generator configured to provide a DC bias to the upper electrode. The high-frequency signal is turned off during at least part of a duration for which the low-frequency signal has the first voltage, and the high-frequency signal is turned on and turned off at intervals of a third cycle different from the first and second cycles.

Abstract: A showerhead according to an embodiment of the present inventive concept includes an upper plate including a plurality of gas supply passages, a lower plate including a plurality of supply holes and a plurality of exhaust slots formed in a lower surface, and a plurality of partition walls between the upper plate and the lower plate, connected to a plurality of exhaust slots and defining exhaust passages that are open at a side portion of the showerhead.

Abstract: Shrouds and substrate treating systems including the same are provided. Substrate treating systems may include a process chamber, a supporter, and a plasma source that is spaced apart from the supporter in a vertical direction. The substrate treating systems may also include a shroud configured to contain the plasma therein. The shroud may include a sidewall portion and a first flange portion extending horizontally from the sidewall portion and including a plurality of first slits that extend through a thickness of the first flange portion. The first flange portion may define a first opening, and a portion of the supporter may extend through the first opening. The sidewall portion may include a plurality of second slits, and each of the plurality of second slits may extend through a thickness of the sidewall portion and may extend from one of the plurality of first slits toward the plasma source.

Abstract: A semiconductor processing apparatus includes an upper electrode and a substrate on a lower electrode disposed inside the process chamber, a first power generator configured to provide a low-frequency signal to the lower electrode, wherein the low-frequency signal varies between a reference voltage and a first voltage at intervals of a first cycle, a second power generator configured to provide a high-frequency signal to the lower electrode, wherein the high-frequency signal has a sinusoidal waveform that oscillates at intervals of a second cycle shorter than the first cycle, and a direct-current (DC) power generator configured to provide a DC bias to the upper electrode. The high-frequency signal is turned off during at least part of a duration for which the low-frequency signal has the first voltage, and the high-frequency signal is turned on and turned off at intervals of a third cycle different from the first and second cycles.

Abstract: Showerheads for semiconductor processing equipment are disclosed that include various features designed to minimize or eliminate non-uniform gas delivery across the surface of a wafer due to gas flow transients within the showerhead.

Abstract: A showerhead according to an embodiment of the present inventive concept includes an upper plate including a plurality of gas supply passages, a lower plate including a plurality of supply holes and a plurality of exhaust slots formed in a lower surface, and a plurality of partition walls between the upper plate and the lower plate, connected to a plurality of exhaust slots and defining exhaust passages that are open at a side portion of the showerhead.

Abstract: Shrouds and substrate treating systems including the same are provided. Substrate treating systems may include a process chamber, a supporter, and a plasma source that is spaced apart from the supporter in a vertical direction. The substrate treating systems may also include a shroud configured to contain the plasma therein. The shroud may include a sidewall portion and a first flange portion extending horizontally from the sidewall portion and including a plurality of first slits that extend through a thickness of the first flange portion. The first flange portion may define a first opening, and a portion of the supporter may extend through the first opening. The sidewall portion may include a plurality of second slits, and each of the plurality of second slits may extend through a thickness of the sidewall portion and may extend from one of the plurality of first slits toward the plasma source.

Abstract: Showerheads for semiconductor processing equipment are disclosed that include various features designed to minimize or eliminate non-uniform gas delivery across the surface of a wafer due to gas flow transients within the showerhead.

Abstract: An improved vaporizer for vaporizing a liquid precursor is provided. The vaporizer may include one or more channels with a relatively large wall-area-to-cross-sectional-flow-area ratio and may be equipped with one or more heater elements configured to heat the channels above the vaporization temperature of the precursor. At least some of the channels may be heated above the vaporization temperature but below the Leidenfrost temperature of the precursor. In some implementations, a carrier gas may be introduced at high speed in a direction generally transverse to the precursor flow to mechanically shear the precursor into droplets. Multiple vaporizers may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.

Abstract: One embodiment can provide a system for curing conductive paste applied on photovoltaic structures. The system can include a wafer carrier for carrying a plurality of photovoltaic structures and a heater. The wafer carrier can include a surface element that is in direct contact with the photovoltaic structures and is substantially thermally insulating. The heater can be positioned above the wafer carrier. The heater can include a heated radiation surface that does not directly contact the photovoltaic structures.

Abstract: Showerheads for semiconductor processing equipment are disclosed that include various features designed to minimize or eliminate non-uniform gas delivery across the surface of a wafer due to gas flow transients within the showerhead.

Abstract: Systems and methods are described for transferring wafers between processing steps in the fabrication of solar cells. The wafers may be processed using a cluster tool including a load-lock, a plurality of processing modules, and a central robot to transfer wafers between the plurality of modules. Each module may include a pedestal including wafer recesses to support the wafers, and puck recesses for supporting ferromagnetic pucks below the wafers. The central robot includes electromagnets for attracting the ferromagnetic pucks toward the electro magnets in order to clamp the wafers between the ferromagnetic pucks and the electromagnets.

Abstract: Systems and methods are described for transferring wafers between processing steps in the fabrication of solar cells. The wafers may be processed using a cluster tool including a load-lock, a plurality of processing modules, and a central robot to transfer wafers between the plurality of modules. Each module may include a pedestal including wafer recesses to support the wafers, and puck recesses for supporting ferromagnetic pucks below the wafers. The central robot includes electromagnets for attracting the ferromagnetic pucks toward the electro magnets in order to clamp the wafers between the ferromagnetic pucks and the electromagnets.

Abstract: An improved vaporizer for vaporizing a process fluid is provided. The vaporizer may be assembled from stacked plates and may include one or more plenums with a relatively large wall-area-to-cross-sectional-flow-area ratio. The vaporizer may be equipped with one or more heating elements configured to heat the plenums above the vaporization temperature of the precursor. At least some of the plenums may be heated above the vaporization temperature, but below the Leidenfrost temperature, of the precursor. Multiple stacked plate arrangements may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.

Abstract: A heated filter assembly for heating gas supplied to a substrate processing system includes a housing defining a cavity, an inner surface and an outer surface. A filter element is arranged inside the cavity of the housing with an outer surface thereof in a spaced relationship relative to the inner surface of the housing. A heat transfer element is arranged inside of the filter element and includes an outer surface and an inner cavity. A plurality of projections is arranged on the outer surface of the heat transfer element in direct physical contact with an inner surface of the filter element. A plurality of portions is arranged on the outer surface of the heat transfer element, is spaced from the inner surface of the filter element and is located between the plurality of projections.

Abstract: One embodiment can provide a system for curing conductive paste applied on photovoltaic structures. The system can include a wafer carrier for carrying a plurality of photovoltaic structures and a heater. The wafer carrier can include a surface element that is in direct contact with the photovoltaic structures and is substantially thermally insulating. The heater can be positioned above the wafer carrier. The heater can include a heated radiation surface that does not directly contact the photovoltaic structures.

Abstract: One embodiment can provide a system for curing conductive paste applied on photovoltaic structures. The system can include a wafer carrier for carrying a plurality of photovoltaic structures and a heater. The wafer carrier can include a surface element that is in direct contact with the photovoltaic structures and is substantially thermally insulating. The heater can be positioned above the wafer carrier. The heater can include a heated radiation surface that does not directly contact the photovoltaic structures.

Abstract: Showerheads for semiconductor processing equipment are disclosed that include various features designed to minimize or eliminate non-uniform gas delivery across the surface of a wafer due to gas flow transients within the showerhead.

Abstract: An improved vaporizer for vaporizing a process fluid is provided. The vaporizer may be assembled from stacked plates and may include one or more plenums with a relatively large wall-area-to-cross-sectional-flow-area ratio. The vaporizer may be equipped with one or more heating elements configured to heat the plenums above the vaporization temperature of the precursor. At least some of the plenums may be heated above the vaporization temperature, but below the Leidenfrost temperature, of the precursor. Multiple stacked plate arrangements may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.

Abstract: A heated filter assembly for heating gas supplied to a substrate processing system includes a housing defining a cavity, an inner surface and an outer surface. A filter element is arranged inside the cavity of the housing with an outer surface thereof in a spaced relationship relative to the inner surface of the housing. A heat transfer element is arranged inside of the filter element and includes an outer surface and an inner cavity. A plurality of projections is arranged on the outer surface of the heat transfer element in direct physical contact with an inner surface of the filter element. A plurality of portions is arranged on the outer surface of the heat transfer element, is spaced from the inner surface of the filter element and is located between the plurality of projections.