Abstract: The present disclosure relates to a double-sided integrated circuit (IC) module, which includes an exposed semiconductor die on a bottom side. A double-sided IC module includes a module substrate with a top side and a bottom side. Electronic components are mounted to each of the top side and the bottom side. Generally, the electronic components are encapsulated by a mold compound. In an exemplary aspect, a portion of the mold compound on the bottom side of the module substrate is removed, exposing a semiconductor die surface of at least one of the electronic components.

Abstract: A power amplifier linearization circuit and related apparatus is provided. In examples disclosed herein, the power amplifier linearization circuit includes an analog pre-distortion (APD) circuit coupled to an input of a power amplifier. Notably, the power amplifier can exhibit linearity response deviation, namely linearity amplitude response deviation and linearity phase response deviation, when amplifying a radio frequency (RF) signal under a compression condition. As such, the APD circuit is configured to receive a control signal corresponding to the linearity response deviation and pre-process the RF signal based on the control signal before providing the RF signal to the power amplifier. As a result, it may be possible to reduce the linearity response deviation in the power amplifier, thus helping to improve linearity and RF performance of the power amplifier.

Abstract: An antenna element and related apparatus are provided. The antenna element includes a radiating structure configured to radiate a radio frequency (RF) signal in a defined polarization (e.g., linear polarization or circular polarization). The radiating structure is conductively coupled to a first pair of feed ports and a second pair of feed ports. In examples discussed herein, at least one selected pair of feed ports among the first pair of feed ports and the second pair of feed ports can be dynamically configured to receive a differential signal(s). By applying the differential signal(s) to the selected pair of feed ports with a proper polarity and/or a relative phase differential, it may be possible to cause the radiating structure to radiate in the defined polarization without requiring additional circuitries (e.g., switching circuit), thus helping to reduce power consumption, heat dissipation, and/or footprint in an apparatus employing the antenna element.

Abstract: A power amplifier linearization circuit and related apparatus is provided. In examples disclosed herein, the power amplifier linearization circuit includes an analog pre-distortion (APD) circuit coupled to an input of a power amplifier. Notably, the power amplifier can exhibit linearity response deviation, namely linearity amplitude response deviation and linearity phase response deviation, when amplifying a radio frequency (RF) signal under a compression condition. As such, the APD circuit is configured to receive a control signal corresponding to the linearity response deviation and pre-process the RF signal based on the control signal before providing the RF signal to the power amplifier. As a result, it may be possible to reduce the linearity response deviation in the power amplifier, thus helping to improve linearity and RF performance of the power amplifier.

Abstract: The present disclosure relates to a reconfigurable patch antenna, which includes a substrate, a ground plane formed on a bottom surface of the substrate or within the substrate, a primary patch, an extension patch, and switching components. The primary patch and the extension patch are formed on a top surface of the substrate and are placed parallel to each other. Herein, a gap is formed between the primary patch and the first extension patch. The switching components are formed across the gap, electrically coupled to both the primary patch and the extension patch, and configured to connect the primary patch to the extension patch or disconnect the primary patch from the extension patch.

Abstract: Disclosed is radio frequency switch circuitry that includes a switch branch having a first branch terminal coupled to a first signal port and a second branch terminal coupled to a second signal port, and a branch control terminal, wherein the switch branch has both an on-state and an off-state to control passage of a radio frequency signal between the first signal port and the second signal port in response to a control signal applied to the control terminal. The radio frequency switch circuitry further includes an isolation inductor coupled between the first branch terminal and the second branch terminal such that the isolation inductor is in parallel with the switch branch, wherein the isolation inductor has a given inductance that provides resonance with a total off-state capacitance of the switch branch in the off-state at a center frequency of the radio frequency signal.

Abstract: A radio frequency switch system includes a plurality of radio frequency switch circuitries that each include a switch branch coupled between a first branch terminal and a second branch terminal and are configured to allow passage of a radio frequency signal through the switch branch in an on-state and to block the radio frequency signal from passing through the switch branch in an off-state in response to a control signal applied to a branch control terminal of the switch branch. Also included is a switch controller configured to apply the control signal to the branch control terminal of the switch branch of each of the plurality of radio frequency switch circuitries, wherein the control signal has a first voltage level that places the switch branch in the on-state and a second voltage level that places the switch branch in the off-state without digital signal decoding of the control signal.

Abstract: The present disclosure relates to a double-sided integrated circuit (IC) module, which includes an exposed semiconductor die on a bottom side. A double-sided IC module includes a module substrate with a top side and a bottom side. Electronic components are mounted to each of the top side and the bottom side. Generally, the electronic components are encapsulated by a mold compound. In an exemplary aspect, a portion of the mold compound on the bottom side of the module substrate is removed, exposing a semiconductor die surface of at least one of the electronic components.

Abstract: An antenna element and related apparatus are provided. The antenna element includes a radiating structure configured to radiate a radio frequency (RF) signal in a defined polarization (e.g., linear polarization or circular polarization). The radiating structure is conductively coupled to a first pair of feed ports and a second pair of feed ports. In examples discussed herein, at least one selected pair of feed ports among the first pair of feed ports and the second pair of feed ports can be dynamically configured to receive a differential signal(s). By applying the differential signal(s) to the selected pair of feed ports with a proper polarity and/or a relative phase differential, it may be possible to cause the radiating structure to radiate in the defined polarization without requiring additional circuitries (e.g., switching circuit), thus helping to reduce power consumption, heat dissipation, and/or footprint in an apparatus employing the antenna element.

Abstract: Radio frequency switch circuitry is disclosed having first and second port terminals, a switch branch having first and second branch terminals, and a branch control terminal, wherein the switch branch is configured to pass an RF signal between the first and second branch terminals in an on-state and block the RF signal from passing between the first and second branch terminals in an off-state in response to a control signal that is coupled with the RF signal and received at the first port terminal. Control signal decoupling circuitry has a control signal input terminal coupled to the first port terminal to receive the control signal coupled to the RF signal and a control signal output terminal coupled to the branch control terminal, wherein the control signal decoupling circuitry is configured to decouple the control signal from the RF signal and provide the control signal to the branch control terminal.

Abstract: The present disclosure relates to a reconfigurable patch antenna, which includes a substrate, a ground plane formed on a bottom surface of the substrate or within the substrate, a primary patch, an extension patch, and switching components. The primary patch and the extension patch are formed on a top surface of the substrate and are placed parallel to each other. Herein, a gap is formed between the primary patch and the first extension patch. The switching components are formed across the gap, electrically coupled to both the primary patch and the extension patch, and configured to connect the primary patch to the extension patch or disconnect the primary patch from the extension patch.

Abstract: Radio frequency switch circuitry is disclosed having first and second port terminals, a switch branch having first and second branch terminals, and a branch control terminal, wherein the switch branch is configured to pass an RF signal between the first and second branch terminals in an on-state and block the RF signal from passing between the first and second branch terminals in an off-state in response to a control signal that is coupled with the RF signal and received at the first port terminal. Control signal decoupling circuitry has a control signal input terminal coupled to the first port terminal to receive the control signal coupled to the RF signal and a control signal output terminal coupled to the branch control terminal, wherein the control signal decoupling circuitry is configured to decouple the control signal from the RF signal and provide the control signal to the branch control terminal.

Abstract: A radio frequency switch system includes a plurality of radio frequency switch circuitries that each include a switch branch coupled between a first branch terminal and a second branch terminal and are configured to allow passage of a radio frequency signal through the switch branch in an on-state and to block the radio frequency signal from passing through the switch branch in an off-state in response to a control signal applied to a branch control terminal of the switch branch. Also included is a switch controller configured to apply the control signal to the branch control terminal of the switch branch of each of the plurality of radio frequency switch circuitries, wherein the control signal has a first voltage level that places the switch branch in the on-state and a second voltage level that places the switch branch in the off-state without digital signal decoding of the control signal.

Abstract: Disclosed is radio frequency switch circuitry that includes a switch branch having a first branch terminal coupled to a first signal port and a second branch terminal coupled to a second signal port, and a branch control terminal, wherein the switch branch has both an on-state and an off-state to control passage of a radio frequency signal between the first signal port and the second signal port in response to a control signal applied to the control terminal. The radio frequency switch circuitry further includes an isolation inductor coupled between the first branch terminal and the second branch terminal such that the isolation inductor is in parallel with the switch branch, wherein the isolation inductor has a given inductance that provides resonance with a total off-state capacitance of the switch branch in the off-state at a center frequency of the radio frequency signal.

Abstract: A method for manufacturing a semiconductor die includes providing an SOI semiconductor wafer including a substrate, an insulating layer over the substrate, and a device layer over the insulating layer. A surface of the SOI semiconductor wafer opposite the substrate is mounted to a temporary carrier mount, and the substrate is removed, leaving an exposed surface of the insulating layer. A high-resistivity gold-doped silicon substrate is then provided on the exposed surface of the insulating layer. By providing the high-resistivity gold-doped silicon substrate, an exceptionally high-resistivity substrate can be achieved, thereby minimizing field-dependent electrical interaction between the substrate and one or more semiconductor devices thereon. Accordingly, harmonic distortion in the semiconductor devices caused by the substrate will be reduced, thereby increasing the performance of the device.

Abstract: The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.

Abstract: The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.

Abstract: The present disclosure relates to an RF power amplifier (PA) power supply that includes a series pass circuit coupled across a direct current (DC)-to-DC converter to receive a power supply input signal, such as provided from a battery, to provide a power supply output signal to at least a first RF PA based on an output setpoint. Control circuitry selects between a switching supply operating mode and a non-switching supply operating mode based on the output setpoint. During the switching supply operating mode, the DC-to-DC converter provides the power supply output signal and during the non-switching supply operating mode, the series pass circuit provides the power supply output signal.

Abstract: The present disclosure relates to RF power amplifier circuitry that may operate as either a Class AB amplifier or as a Class B amplifier based on a magnitude of RF output power provided by the RF power amplifier circuitry. A transistor bias circuit in the RF power amplifier circuitry may control transitioning between operating as the Class AB amplifier and operating as the Class B amplifier. When the magnitude of the RF output power is below a first threshold, the RF power amplifier circuitry may operate as a Class AB amplifier, and when the magnitude of the RF output power is above the first threshold, the RF power amplifier circuitry may operate as a Class B amplifier.

Abstract: The present disclosure relates to RF power amplifier circuitry that may include a source termination circuit, a load termination circuit, or both used in an unconventional manner to shape amplitude-based amplitude modulation (AM-AM) distortion, amplitude-based phase modulation (AM-PM) distortion, or both to extend a linear operating range of the RF power amplifier circuitry. Conventional RF power amplifier circuitry may operate as a Class F RF power amplifier, which may use termination circuits to create impedance valleys at even harmonics of an RF carrier frequency to improve a saturated efficiency of the RF power amplifier circuitry. However, the termination circuits of the present disclosure may create impedance valleys that are not at even harmonics of an RF carrier frequency to shape amplitude-based distortion, thereby extending a linear operating range of the RF power amplifier circuitry.