Abstract: A method of measuring morphological characteristics of a laser annealed film having a crystalline structure, which is defined by at least one row of side-to-side positioned grains each having a length (Lg), which is uniform for the grains, and width (Wg), wherein a length of the row (Lr) corresponds to a cumulative width Wg of the grains and creates a diffraction of various orders of diffraction, the method includes generating a monochromatic light; training the monochromatic light onto a surface of the laser annealed film at an angle varying in a range between 0° (incident) and grazing angles; and measuring variations of properties of the monochromatic light diffracted from the surface, thereby measuring the morphological characteristics of the laser annealed film along the length (Lr) of the one row.

Abstract: A method of in-line characterization of ion implant process, during the SOI bond and cleave manufacturing or engineered silicon layer fabrication. In one embodiment, the method includes the steps of illuminating the engineered donor wafer using a modulated light source; performing a non-contact SPV measurement on the silicon wafer; measuring a dynamic charge (Qd) in response to implant induced crystal damage; and determining the accuracy and uniformity of the value of an implant parameter in response to the dynamic charge. In another embodiment, In another embodiment, the step of determining utilizes the equation VPV?kT?/?Qnet where VPV is photo voltage generated in the implanted wafer, ? is a light flux of the modulated light source, T is temperature of the wafer, and ? is a light modulation frequency of the modulated light source.

Abstract: The invention relates to the use of the metrology methods and the related apparatus disclosed herein that incorporate thermal treatment devices and methods that improve defect detection. Specifically, in one aspect the invention relates to method of thermally treating a semiconductor wafer such that an acceleration of interstitial defect migration is achieved while leaving vacancy defects substantially unaltered.

Abstract: A method and apparatus for thickness measurement of an active layer of a silicon-on-insulator material comprising a layered structure of silicon film, a buried oxide layer and a silicon substrate. In one embodiment, the method comprises the steps of directing a low intensity light of an energy greater than the silicon band-gap on the silicon film, the energy of light sufficient to be substantially absorbed within the silicon film such that the error from the substrate excitation is small compared to the small signal calibration of the apparatus; modifying the surface potential with the chemical treatment, electrical bias or corona, measuring surface photovoltage of the silicon film; and calculating the thickness of the silicon film in response to a non-contact photovoltage measurement of the semiconductor layered structure.

Abstract: A probe adapted for characterization of a semiconductor wafer having a surface. In one embodiment, the probe includes a source of modulated light; an optical fiber in optical communication with the source of modulated light, the optical fiber having a face and comprises a fiber core; and a transparent conductive layer coating the face of the optical fiber. Light from the source of modulated light is directed along the fiber core of the optical fiber through the face of the optical fiber to the surface of the semiconductor wafer. The optically transparent conductive layer detects charges from the surface of the semiconductor wafer.

Abstract: A method and apparatus for forming an oxide layer on semiconductors using a combination of ultraviolet rays and heat. The apparatus comprises a chamber having a top surface and a bottom surface and defining a wafer holding cavity; an ultraviolet source at the top surface of said chamber; an infrared source at the bottom surface of the chamber; and an oxygen gas inlet for passing oxygen gas through the chamber. Oxygen gas entering the chamber through the oxygen gas inlet is ionized by ultraviolet rays from the ultraviolet source and reacts with the silicon wafer to create an oxide layer on the silicon wafer in the cavity. Infrared radiation from the infrared source heats the silicon wafer to accelerate the creation of the oxide layer on said silicon wafer.

Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.