Patents by Inventor Edward W. Douglas

Edward W. Douglas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6579741
    Abstract: A method of manufacturing a monolithic compound semiconductor sensing device includes epitaxially depositing a signal conditioning epitaxy on a substrate surface, providing a well in the signal conditioning circuit and exposing the substrate surface, and epitaxially depositing a sensor within the well.
    Type: Grant
    Filed: September 13, 2002
    Date of Patent: June 17, 2003
    Assignee: Emcore Corporation
    Inventors: Stephen Schwed, Edward W. Douglas, Christopher Palmer
  • Patent number: 6580139
    Abstract: A monolithically integrated, compound semiconductor sensing device and a method of making the device is provided. The device includes an signal conditioning circuit formed on a substrate surface. A sensor including one or more compound semiconductors is deposited on a second portion of the substrate surface. The signal conditioning circuit has a well formed therein for exposing the substrate surface and the sensor is deposited within the well.
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: June 17, 2003
    Assignee: Emcore Corporation
    Inventors: Stephen Schwed, Edward W. Douglas, Christopher Palmer
  • Publication number: 20030020127
    Abstract: A method of manufacturing a monolithic compound semiconductor sensing device includes epitaxially depositing a signal conditioning epitaxy on a substrate surface, providing a well in the signal conditioning circuit and exposing the substrate surface, and epitaxially depositing a sensor within the well.
    Type: Application
    Filed: September 13, 2002
    Publication date: January 30, 2003
    Applicant: Emcore Corporation
    Inventors: Stephen Schwed, Edward W. Douglas, Christopher Palmer
  • Patent number: 6420252
    Abstract: A method of forming a self-aligned contact on a semiconductor includes forming a layer of a dielectric material over a semiconductor, providing a photoresist layer over the dielectric layer and then exposing the photoresist layer with a desired pattern and developing an opening in the photoresist layer. The dielectric material exposed through the photoresist layer opening is then removed to form a contact opening extending through the dielectric material to the semiconductor. The photoresist layer is then eroded so as to enlarge the size of the opening in the photoresist layer, whereby the dielectric material adjacent the contact opening is exposed through the enlarged opening of the photoresist layer. A barrier metal is then deposited in the enlarged opening of the photoresist layer and in the contact opening of the dielectric material, whereby the barrier metal overlies the exposed portion of the dielectric material. A conductive metal is then deposited atop the barrier metal.
    Type: Grant
    Filed: May 10, 2000
    Date of Patent: July 16, 2002
    Assignee: Emcore Corporation
    Inventors: Stephen Schwed, Louis A. Koszi, Edward W. Douglas, Michael G. Brown