Patents by Inventor Edward William Maxwell

Edward William Maxwell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide vertical-sidewall dual-mesa static induction transistor
    Patent number: 8519410
    Abstract: A vertical-sidewall dual-mesa static induction transistor (SIT) structure includes a silicon carbide substrate having a layer arrangement formed thereon. Laterally spaced ion implanted gate regions are defined in the layer arrangement. Source regions are defined in the layer arrangement. Each of the source regions can include a channel mesa having a source mesa disposed thereon. The source mesa includes upright sidewalls relative to a principal plane of the substrate defining a horizontal dimension thereof. The channel mesa includes upright sidewalls relative to the source mesa and the principal plane of the substrate. Also disclosed is a method of fabricating a vertical-sidewall dual-mesa SiC transistor device. The method includes implanting ions at an angle relative to a principal plane of the substrate to form gate junctions in upper portions of the substrate and lateral portions of the upright channel mesas.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: August 27, 2013
    Assignee: Microsemi Corporation
    Inventors: Bruce Odekirk, Francis K. Chai, Edward William Maxwell, Douglas C. Thompson, Jr.