Patents by Inventor Edward Wuori

Edward Wuori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11222676
    Abstract: Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: January 11, 2022
    Assignee: Integrated Magnetoelectronics Corp.
    Inventor: Edward Wuori
  • Publication number: 20200349992
    Abstract: Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.
    Type: Application
    Filed: July 21, 2020
    Publication date: November 5, 2020
    Inventor: Edward Wuori
  • Patent number: 10762940
    Abstract: Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: September 1, 2020
    Assignee: Integrated Magnetoelectronics Corporation
    Inventor: Edward Wuori
  • Patent number: 10170171
    Abstract: Techniques are described that enable a high-capacity memory chip based on three-dimensional SpinRAM cells and modules, and support electronics, at least some of which, are implemented with all-metal solid-state components.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: January 1, 2019
    Assignee: Integrated Magnetoelectronics Corporation
    Inventors: Edward Wuori, Richard Spitzer
  • Publication number: 20180166113
    Abstract: Techniques are described that enable a high-capacity memory chip based on three-dimensional SpinRAM cells and modules, and support electronics, at least some of which, are implemented with all-metal solid-state components.
    Type: Application
    Filed: December 7, 2017
    Publication date: June 14, 2018
    Inventors: Edward Wuori, Richard Spitzer
  • Publication number: 20180166097
    Abstract: Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.
    Type: Application
    Filed: December 6, 2017
    Publication date: June 14, 2018
    Inventor: Edward Wuori
  • Patent number: 9741923
    Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: August 22, 2017
    Assignee: Integrated MagnetoElectronics Corporation
    Inventors: E. James Torok, Edward Wuori, Richard Spitzer
  • Publication number: 20170092843
    Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.
    Type: Application
    Filed: September 21, 2016
    Publication date: March 30, 2017
    Inventors: E. James Torok, Edward Wuori, Richard Spitzer
  • Patent number: 8619467
    Abstract: Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: December 31, 2013
    Assignee: Integrated Magnetoelectronics
    Inventors: E. James Torok, Richard Spitzer, David L. Fleming, Edward Wuori
  • Patent number: 8300455
    Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: October 30, 2012
    Assignee: Integrated MagnetoElectronics
    Inventors: E. James Torok, David Leslie Fleming, Edward Wuori, Richard Spitzer
  • Publication number: 20110211387
    Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.
    Type: Application
    Filed: February 16, 2011
    Publication date: September 1, 2011
    Applicant: INTEGRATED MAGNETOELECTRONICS CORP.
    Inventors: E. James Torok, David Leslie Fleming, Edward Wuori, Richard Spitzer
  • Patent number: 7911830
    Abstract: Various magnetoresistive memory cells and architectures are included which enable nonvolatile memories having high information density.
    Type: Grant
    Filed: May 14, 2008
    Date of Patent: March 22, 2011
    Assignee: Integrated MagnetoElectronics
    Inventors: E. James Torok, David Leslie Fleming, Edward Wuori, Richard Spitzer
  • Publication number: 20080285331
    Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.
    Type: Application
    Filed: May 14, 2008
    Publication date: November 20, 2008
    Applicant: INTEGRATED MAGNETOELECTRONICS CORP.
    Inventors: E. James Torok, David Leslie Fleming, Edward Wuori, Richard Spitzer
  • Patent number: 7224566
    Abstract: Electronic systems are described including semiconductor circuitry characterized by first signals and all-metal circuitry characterized by second signals and comprising a plurality of transpinnors. Each transpinnor includes a network of thin-film elements. At least one thin-film element in each transpinnor exhibits giant magnetoresistance. Each transpinnor includes a conductor inductively coupled to the at least one thin-film element for controlling operation of the transpinnor. Interface circuitry connects the semiconductor circuitry to the all-metal circuitry and converts between the first signals and the second signals.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: May 29, 2007
    Assignee: Integrated Magnetoelectronics Corporation
    Inventors: David Green Baskin, legal representative, Stephen J. Nuspl, Richard Spitzer, E. James Torok, Edward Wuori, Arpad Barna, deceased
  • Patent number: 7220968
    Abstract: A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.
    Type: Grant
    Filed: January 18, 2006
    Date of Patent: May 22, 2007
    Assignee: Integrated Magnetoelectronics Corporation
    Inventors: Robert Burger, Stephen Nuspl, Richard Spitzer, Edward Wuori, Frederick Zieber
  • Publication number: 20060186342
    Abstract: A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.
    Type: Application
    Filed: January 18, 2006
    Publication date: August 24, 2006
    Inventors: Robert Burger, Stephen Nuspl, Richard Spitzer, Edward Wuori, Frederick Zieber
  • Publication number: 20050192493
    Abstract: A device and method for measuring the concentration of analytes in the blood of a portion of tissue. The device includes a sensor module, a monitor, and a processor (separate from or integral with the sensor module). The sensor module includes a radiation source for emitting radiation to the tissue; a collimator and narrow band filter for processing the radiation after it has transmitted through or been reflected by the tissue; and one or more sensors for sensing the transmitted or reflected radiation. The one or more sensors send a signal to the processor which algorithmically converts the radiation using linear regression or orthogonal functions to determine the concentration of one or more blood analytes. The device self-calibrates to eliminate error caused by variables such as skin character. The sensor module is integrated to reduce size and weight such that it is inobtrusive, and the monitor is compact for transport.
    Type: Application
    Filed: May 2, 2005
    Publication date: September 1, 2005
    Inventor: Edward Wuori
  • Patent number: 6859063
    Abstract: Transceiver components for a transmission line are described. A driver includes a first network of thin-film elements exhibiting giant magnetoresistance, and a first input conductor inductively coupled to at least one of the thin-film elements in the first network. At least one dimension of each thin-film element in the first network is configured with reference to the characteristic impedance of the transmission line. A receiver includes a second network of thin-film elements exhibiting giant magnetoresistance, and a second input conductor inductively coupled to at least one of the thin-film elements in the second network. A termination impedance in series with the second input conductor has a value relating to the characteristic impedance of the transmission line.
    Type: Grant
    Filed: April 9, 2003
    Date of Patent: February 22, 2005
    Assignee: Integrated Magnetoelectronics Corporation
    Inventors: Stephen J. Nuspl, Edward Wuori, E. James Torok
  • Publication number: 20040075152
    Abstract: Electronic systems are described including semiconductor circuitry characterized by first signals and all-metal circuitry characterized by second signals and comprising a plurality of transpinnors. Each transpinnor includes a network of thin-film elements. At least one thin-film element in each transpinnor exhibits giant magnetoresistance. Each transpinnor includes a conductor inductively coupled to the at least one thin-film element for controlling operation of the transpinnor. Interface circuitry connects the semiconductor circuitry to the all-metal circuitry and converts between the first signals and the second signals.
    Type: Application
    Filed: April 17, 2003
    Publication date: April 22, 2004
    Applicant: Integrated Magnetoelectronics Corporation
    Inventors: Arpad Barna, Stephen J. Nuspl, Richard Spitzer, E. James Torok, Edward Wuori
  • Patent number: RE48879
    Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: January 4, 2022
    Assignee: Integrated Magnetoelectronics Corp.
    Inventors: E. James Torok, Edward Wuori, Richard Spitzer