Abstract: Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.

Abstract: Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.

Abstract: Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.

Abstract: Techniques are described that enable a high-capacity memory chip based on three-dimensional SpinRAM cells and modules, and support electronics, at least some of which, are implemented with all-metal solid-state components.

Abstract: Techniques are described that enable a high-capacity memory chip based on three-dimensional SpinRAM cells and modules, and support electronics, at least some of which, are implemented with all-metal solid-state components.

Abstract: Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.

Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.

Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.

Abstract: Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.

Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.

Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.

Abstract: Various magnetoresistive memory cells and architectures are included which enable nonvolatile memories having high information density.

Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.

Abstract: Electronic systems are described including semiconductor circuitry characterized by first signals and all-metal circuitry characterized by second signals and comprising a plurality of transpinnors. Each transpinnor includes a network of thin-film elements. At least one thin-film element in each transpinnor exhibits giant magnetoresistance. Each transpinnor includes a conductor inductively coupled to the at least one thin-film element for controlling operation of the transpinnor. Interface circuitry connects the semiconductor circuitry to the all-metal circuitry and converts between the first signals and the second signals.

Abstract: A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.

Abstract: A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.

Abstract: A device and method for measuring the concentration of analytes in the blood of a portion of tissue. The device includes a sensor module, a monitor, and a processor (separate from or integral with the sensor module). The sensor module includes a radiation source for emitting radiation to the tissue; a collimator and narrow band filter for processing the radiation after it has transmitted through or been reflected by the tissue; and one or more sensors for sensing the transmitted or reflected radiation. The one or more sensors send a signal to the processor which algorithmically converts the radiation using linear regression or orthogonal functions to determine the concentration of one or more blood analytes. The device self-calibrates to eliminate error caused by variables such as skin character. The sensor module is integrated to reduce size and weight such that it is inobtrusive, and the monitor is compact for transport.

Abstract: Transceiver components for a transmission line are described. A driver includes a first network of thin-film elements exhibiting giant magnetoresistance, and a first input conductor inductively coupled to at least one of the thin-film elements in the first network. At least one dimension of each thin-film element in the first network is configured with reference to the characteristic impedance of the transmission line. A receiver includes a second network of thin-film elements exhibiting giant magnetoresistance, and a second input conductor inductively coupled to at least one of the thin-film elements in the second network. A termination impedance in series with the second input conductor has a value relating to the characteristic impedance of the transmission line.

Abstract: Electronic systems are described including semiconductor circuitry characterized by first signals and all-metal circuitry characterized by second signals and comprising a plurality of transpinnors. Each transpinnor includes a network of thin-film elements. At least one thin-film element in each transpinnor exhibits giant magnetoresistance. Each transpinnor includes a conductor inductively coupled to the at least one thin-film element for controlling operation of the transpinnor. Interface circuitry connects the semiconductor circuitry to the all-metal circuitry and converts between the first signals and the second signals.

Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.