Patents by Inventor Edwin Arevalo

Edwin Arevalo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11551904
    Abstract: A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 ?m or more using larger tilt angles.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: January 10, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Venkataramana R. Chavva, KyuHa Shim, Hans Gossmann, Edwin Arevalo, Scott Falk, Rajesh Prasad
  • Publication number: 20220076915
    Abstract: A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 ?m or more using larger tilt angles.
    Type: Application
    Filed: September 9, 2020
    Publication date: March 10, 2022
    Inventors: Venkataramana R. Chavva, KyuHa Shim, Hans Gossmann, Edwin Arevalo, Scott Falk, Rajesh Prasad
  • Patent number: 10515802
    Abstract: A method may include depositing a mask layer on a substrate using physical vapor deposition, wherein an absolute value of a stress in the mask layer has a first value; and directing a dose of ions into the mask layer, wherein the absolute value of the stress in the mask layer has a second value, less than the first value, after the directing the dose.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: December 24, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Rajesh Prasad, Tzu-Yu Liu, Edwin Arevalo, Deven Mittal, Somchintana Norasetthekul, Kyuha Shim, Lauren Liaw, Takaski Shimizu, Nobuyuki Sasaki, Ryuichi Muira, Hiro Ito
  • Publication number: 20190326116
    Abstract: A method may include depositing a mask layer on a substrate using physical vapor deposition, wherein an absolute value of a stress in the mask layer has a first value; and directing a dose of ions into the mask layer, wherein the absolute value of the stress in the mask layer has a second value, less than the first value, after the directing the dose.
    Type: Application
    Filed: July 9, 2018
    Publication date: October 24, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Rajesh Prasad, Tzu-Yu Liu, Edwin Arevalo, Deven Mittal, Somchintana Norasetthekul, Kyuha Shim, Lauren Liaw, Takaski Shimizu, Nobuyuki Sasaki, Ryuichi Muira, Hiro Ito
  • Patent number: 7927986
    Abstract: A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragments of precursor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions.
    Type: Grant
    Filed: July 22, 2008
    Date of Patent: April 19, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, George D. Papasouliotis, Edwin Arevalo
  • Publication number: 20100022076
    Abstract: A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragments of precursor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions.
    Type: Application
    Filed: July 22, 2008
    Publication date: January 28, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Ludovic Godet, George D. Papasouliotis, Edwin Arevalo
  • Publication number: 20080318345
    Abstract: An approach that determines an ion implantation processing characteristic in a plasma ion implantation of a substrate is described. In one embodiment, there is a light source configured to direct radiation onto the substrate. A detector is configured to measure radiation reflected from the substrate. A processor is configured to correlate the measured radiation reflected from the substrate to an ion implantation processing characteristic.
    Type: Application
    Filed: June 22, 2007
    Publication date: December 25, 2008
    Inventors: Harold M. Persing, Vikram Singh, Edwin Arevalo
  • Publication number: 20070224840
    Abstract: A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.
    Type: Application
    Filed: March 19, 2007
    Publication date: September 27, 2007
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Anthony Renau, Vikram Singh, Atul Gupta, Timothy Miller, Edwin Arevalo, George Papasouliotis, Yong Bae Jeon
  • Publication number: 20050260838
    Abstract: A method for activating a first ionic species implanted in a semiconductor, including annealing the semiconductor using a controlled diffusion annealing, and controlling the oxygen content during the annealing to redistribute the first ionic species such that the abruptness of the implanted profile is increased after the annealing.
    Type: Application
    Filed: May 9, 2003
    Publication date: November 24, 2005
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Daniel Downey, Edwin Arevalo