Patents by Inventor Edwin Chih-chuan Kan

Edwin Chih-chuan Kan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Use of source/drain asymmetry MOSFET devices in dynamic and analog circuits
    Patent number: 6466489
    Abstract: A CMOS charge pump circuit with diode connected MOSFET transistors is formed with asymmetric transistors which preferably have halo source region implants with a forward threshold voltage (VthF) and with a reverse threshold voltage (VthR), with the forward threshold voltage VthF being substantially larger than the reverse threshold voltage VthR. Preferably, the halo source regions are super halos. An SRAM circuit with pass transistors and pull down transistors includes pass transistors which comprise super halo asymmetric devices.
    Type: Grant
    Filed: May 18, 2001
    Date of Patent: October 15, 2002
    Assignee: International Business Machines Corporation
    Inventors: Mei Kei Ieong, Edwin Chih-chuan Kan, Hon-Sum Philip Wong