Abstract: Apparatus for the nitridiation of a silicon-bearing substrate is disclosed. The apparatus includes a double walled reaction vessel having first and second concentric walls bounding a reaction volume. Temperature of the reaction volume is controlled by resistance heaters located outside the outermost of the two concentric tubes. Plasma electrodes are positioned about the reaction volume and between the two concentric tubes. The ambient between the two tubes is controlled to protect the electrodes from oxidation at the high temperatures to which they are exposed. An rf generator is coupled to the plasma electrodes and is controllable independently from the resistance heaters.

Abstract: A method and apparatus for maintaining a constant elevated liquid pressure in a small vessel by pressuring with liquid the small vessel and a larger vessel in open communication therewith. The larger vessel, preferably, has a volume of about 20 to about 100 times the volume of the smaller vessel. In one embodiment the mechanical pressuring is reapplied to maintain a constant pressure in the vessels. In another embodiment, the temperature of the liquid in the larger vessel is manipulated to maintain pressure in the vessels.

Abstract: A single point mooring and transfer facility is provided which comprises a floating buoy, a submerged platform, means for maintaining the floating buoy in position relative to the platform and a conduit means between the platform and the buoy. The conduit means has a coiled portion with its axis substantially vertical. The coiled portion provides the necessary flexibility between the floating buoy and the submerged platform, thus avoiding any requirement for flexible hoses and/or undersea swivel connections.