Patents by Inventor Edwin Lanier Piner
Edwin Lanier Piner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200243651Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: December 21, 2018Publication date: July 30, 2020Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Publication number: 20190229190Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: December 21, 2018Publication date: July 25, 2019Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Publication number: 20190214468Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: December 4, 2018Publication date: July 11, 2019Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Patent number: 9461119Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: GrantFiled: December 22, 2014Date of Patent: October 4, 2016Assignee: Infineon Technologies Americas Corp.Inventors: T. Warren Weeks, Jr., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Patent number: 9437686Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: GrantFiled: December 22, 2014Date of Patent: September 6, 2016Assignee: Infineon Technologies Americas Corp.Inventors: T. Warren Weeks, Jr., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Publication number: 20160126315Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: October 29, 2015Publication date: May 5, 2016Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Publication number: 20150187880Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: December 22, 2014Publication date: July 2, 2015Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Patent number: 9064775Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: GrantFiled: August 5, 2014Date of Patent: June 23, 2015Assignee: International Rectifier CorporationInventors: T. Warren Weeks, Jr., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Publication number: 20150108495Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: December 22, 2014Publication date: April 23, 2015Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Publication number: 20140353680Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: August 5, 2014Publication date: December 4, 2014Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Patent number: 8343824Abstract: Gallium nitride material devices and related processes are described. In some embodiments, an N-face of the gallium nitride material region is exposed by removing an underlying region.Type: GrantFiled: June 20, 2008Date of Patent: January 1, 2013Assignee: International Rectifier CorporationInventors: Edwin Lanier Piner, Jerry Wayne Johnson, John Claassen Roberts
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Patent number: 8105921Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: GrantFiled: December 24, 2008Date of Patent: January 31, 2012Assignee: International Rectifier CorporationInventors: T. Warren Weeks, Jr., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Patent number: 8026581Abstract: Gallium nitride material structures are provided, as well as devices and methods associated with such structures. The structures include a diamond region which may facilitate conduction and removal of heat generated within the gallium nitride material during device operation. The structures described herein may form the basis of a number of semiconductor devices and, in particular, transistors (e.g., FETs).Type: GrantFiled: February 5, 2008Date of Patent: September 27, 2011Assignee: International Rectifier CorporationInventors: Allen W. Hanson, Edwin Lanier Piner
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Patent number: 7569871Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: March 31, 2008Date of Patent: August 4, 2009Assignee: Nitronex CorporationInventors: Walter H. Nagy, Jerry Wayne Johnson, Edwin Lanier Piner, Pradeep Rajagopal, John Claassen Roberts, Sameer Singhal, Robert Joseph Therrien, Andrei Vescan, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Kevin J. Linthicum
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Publication number: 20080200013Abstract: Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.Type: ApplicationFiled: January 31, 2008Publication date: August 21, 2008Applicant: Nitronex CorporationInventors: Edwin Lanier Piner, John Claassen Roberts, Pradeep Rajagopal
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Patent number: 7352016Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: November 13, 2006Date of Patent: April 1, 2008Assignee: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Jerry Wayne Johnson, Kevin J. Linthicum, Edwin Lanier Piner, Pradeep Rajagopal, John Claassen Roberts, Sameer Singhal, Robert Joseph Therrien, Andrei Vescan
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Patent number: 7352015Abstract: Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.Type: GrantFiled: April 1, 2005Date of Patent: April 1, 2008Assignee: Nitronex CorporationInventors: Edwin Lanier Piner, John Claassen Roberts, Pradeep Rajagopal
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Patent number: 7339205Abstract: Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.Type: GrantFiled: June 28, 2004Date of Patent: March 4, 2008Assignee: Nitronex CorporationInventors: Edwin Lanier Piner, John C. Roberts, Pradeep Rajagopal