Abstract: A device structure includes a first interconnect layer, a second interconnect layer, a device layer including a comprising a plurality of devices, where the device layer is between the first interconnect layer and the second interconnect layer. The device structure further includes a dielectric layer adjacent the second interconnect layer, where the dielectric layer includes one or more of metallic dopants or a plurality of metal structures, wherein the plurality of metal structures is electrically isolated from interconnect structures but in contact with a dielectric material of the second interconnect layer, and where the individual ones of the plurality of metal structures is above a region including at least some of the plurality of devices. The device structure further includes a substrate adjacent to the dielectric layer and a heat sink coupled with the substrate.