Abstract: The present disclosure includes methods of lapping that include energizing one or more elements that are located proximal to a first magnetoresistive element in a transducer region and generate heat and cause the first magnetoresistive element to selectively expand in the lapping direction relative to one or more other magnetoresistive elements. The present disclosure also includes methods of lapping that use one or more thermal sensors located proximal to the first magnetoresistive element to help control lapping in the lapping direction. The present disclosure includes related lapping systems and sliders.

Abstract: The present disclosure includes methods of lapping that include energizing one or more elements that are located proximal to a first magnetoresistive element in a transducer region and generate heat and cause the first magnetoresistive element to selectively expand in the lapping direction relative to one or more other magnetoresistive elements. The present disclosure also includes methods of lapping that use one or more thermal sensors located proximal to the first magnetoresistive element to help control lapping in the lapping direction. The present disclosure includes related lapping systems and sliders.

Abstract: The present disclosure includes methods of lapping that include energizing one or more elements that are located proximal to a first magnetoresistive element in a transducer region and generate heat and cause the first magnetoresistive element to selectively expand in the lapping direction relative to one or more other magnetoresistive elements. The present disclosure also includes methods of lapping that use one or more thermal sensors located proximal to the first magnetoresistive element to help control lapping in the lapping direction. The present disclosure includes related lapping systems and sliders.

Abstract: The present disclosure includes methods of lapping that include energizing one or more elements that are located proximal to a first magnetoresistive element in a transducer region and generate heat and cause the first magnetoresistive element to selectively expand in the lapping direction relative to one or more other magnetoresistive elements. The present disclosure also includes methods of lapping that use one or more thermal sensors located proximal to the first magnetoresistive element to help control lapping in the lapping direction. The present disclosure includes related lapping systems and sliders.

Abstract: The present disclosure includes methods of lapping that include energizing one or more elements that are located proximal to a first magnetoresistive element in a transducer region and generate heat and cause the first magnetoresistive element to selectively expand in the lapping direction relative to one or more other magnetoresistive elements. The present disclosure also includes methods of lapping that use one or more thermal sensors located proximal to the first magnetoresistive element to help control lapping in the lapping direction. The present disclosure includes related lapping systems and sliders.

Abstract: A magnetic device including a write pole, a magnetic reader, or both; and one or more shields adjacent at least a portion of the write pole or the magnetic reader, or both, wherein at least a portion of the one or more shields includes or is made from Ni100-aXa, wherein X is chosen from: Ru, Re, Zr, Cr, and Cu; and a is the atomic percent of the element X, and can range from about 20 to about 90.

Abstract: A magnetic device including a write pole, a magnetic reader, or both; and one or more shields adjacent at least a portion of the write pole or the magnetic reader, or both, wherein at least a portion of the one or more shields includes or is made from Ni100-aXa, wherein X is chosen from: Ru, Re, Zr, Cr, and Cu; and a is the atomic percent of the element X, and can range from about 20 to about 90.

Abstract: A magnetic device that includes a write pole having a write pole tip; a read pole having a read pole tip; an optical near field transducer; and a contact pad. The contact pad includes Ni100-aXa, wherein X is chosen from Ru, Re, Zr, Cr, and Cu; and a is the atomic percent of the element X, and can range from about 20 to about 90. The optical near field transducer is positioned between the read pole and the write pole and the contact pad is positioned adjacent the write pole opposite the optical near field transducer.

Abstract: A magnetic device that includes a write pole having a write pole tip; a read pole having a read pole tip; an optical near field transducer; and a contact pad. The contact pad includes Ni100-aXa, wherein X is chosen from Ru, Re, Zr, Cr, and Cu; and a is the atomic percent of the element X, and can range from about 20 to about 90. The optical near field transducer is positioned between the read pole and the write pole and the contact pad is positioned adjacent the write pole opposite the optical near field transducer.

Abstract: A magnetic device that includes a write pole having a write pole tip; a read pole having a read pole tip; an optical near field transducer; and a contact pad. The contact pad includes Ni100-aXa, wherein X is chosen from Ru, Re, Zr, Cr, and Cu; and a is the atomic percent of the element X, and can range from about 20 to about 90. The optical near field transducer is positioned between the read pole and the write pole and the contact pad is positioned adjacent the write pole opposite the optical near field transducer.