Patents by Inventor Edwin te Sligte
Edwin te Sligte has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230063156Abstract: An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.Type: ApplicationFiled: December 24, 2020Publication date: March 2, 2023Applicants: ASML Holding N.V., ASML Netherlands B.V.Inventors: Ronald Peter ALBRIGHT, Kursat BAL, Vadim Yevgenyevich BANINE, Richard Joseph BRULS, Sjoerd Frans DE VRIES, Olav Waldemar Vladimir FRIJNS, Yang-Shan HUANG, Zhuangxiong HUANG, Johannes Henricus Wilhelmus JACOBS, Johannes Hubertus Josephina MOORS, Georgi Nanchev NENCHEV, Andrey NIKIPELOV, Thomas Maarten RAASVELD, Manish RANJAN, Edwin TE SLIGTE, Karl Robert UMSTADTER, Eray UZGÖREN, Marcus Adrianus VAN DE KERKHOF, Parham YAGHOOBI
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Patent number: 11199363Abstract: A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in turn, includes: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant (45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.Type: GrantFiled: January 6, 2020Date of Patent: December 14, 2021Assignee: CARL ZEISS SMT GMBHInventors: Fred Roozeboom, Dirk Heinrich Ehm, Andrea Illiberi, Moritz Becker, Edwin Te Sligte, Yves Lodewijk Maria Creijghton
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Patent number: 11048180Abstract: A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.Type: GrantFiled: September 16, 2019Date of Patent: June 29, 2021Assignee: ASML Netherlands B.V.Inventors: Andrey Nikipelov, Vadim Yevgenyevich Banine, Christian Gerardus Norbertus Hendricus Marie Cloin, Edwin Te Sligte, Marcus Adrianus Van De Kerkhof, Ferdinandus Martinus Jozef Henricus Van De Wetering
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Patent number: 10690812Abstract: An optical element (50), comprising: a substrate (52), an EUV radiation reflecting multilayer system (51) applied to the substrate, and a protective layer system (60) applied to the multilayer system and having at least a first and a second layer (57, 58). The first layer (57) is arranged closer to the multilayer system (51) than is the second layer (58) and serves as a diffusion barrier for hydrogen. This first layer (57) has a lower solubility for hydrogen than does the second layer (58), which serves for absorbing hydrogen. Also disclosed are an optical system for EUV lithography with at least one such optical element, and a method for treating an optical element in order to remove hydrogen incorporated in at least one layer (57, 58, 59) of the protective layer system and/or in at least one layer (53, 54) of the multilayer system (51).Type: GrantFiled: September 15, 2015Date of Patent: June 23, 2020Assignees: CARL ZEISS SMT GMBH, ASML NETHERLANDS B.V.Inventors: Hermanus Hendricus Petrus Theodorus Bekman, Dirk Heinrich Ehm, Jeroen Huijbregtse, Arnoldus Jan Storm, Tina Graber, Irene Ament, Dries Smeets, Edwin Te Sligte, Alexey Kuznetsov
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Publication number: 20200142327Abstract: A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in turn, includes: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant (45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.Type: ApplicationFiled: January 6, 2020Publication date: May 7, 2020Inventors: Fred ROOZEBOOM, Dirk Heinrich EHM, Andrea ILLIBERI, Moritz BECKER, Edwin TE SLIGTE, Yves Lodewijk Maria CREIJGHTON
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Publication number: 20200096880Abstract: A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.Type: ApplicationFiled: September 16, 2019Publication date: March 26, 2020Applicant: ASML Netherlands B.V.Inventors: Andrey NIKIPELOV, Vadim Yevgenyevich Banine, Christian Gerardus Norbertus Cloin, Edwin Te Sligte, Marcus Adrianus Van De Kerkhof, Ferdinandus Martinus Jozef Henri Van De Weterring
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Patent number: 10073361Abstract: An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) additionally feeds an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) that sets an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).Type: GrantFiled: April 10, 2017Date of Patent: September 11, 2018Assignees: Carl Zeiss SMT GmbH, ASML Netherlands B.V.Inventors: Dirk Heinrich Ehm, Stefan-Wolfgang Schmidt, Edgar Osorio, Edwin Te Sligte, Mark Zellenrath, Hella Logtenberg
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Publication number: 20170212433Abstract: An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) additionally feeds an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) that sets an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).Type: ApplicationFiled: April 10, 2017Publication date: July 27, 2017Inventors: Dirk Heinrich EHM, Stefan-Wolfgang SCHMIDT, Edgar OSORIO, Edwin TE SLIGTE, Mark ZELLENRATH, Hella LOGTENBERG
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Publication number: 20170045832Abstract: Disclosed is a cleaning apparatus configured to clean a radiation transmission assembly (such as a viewport), or part thereof. The radiation transmission assembly provides for radiation transmission to and/or from a low pressure chamber. The cleaning apparatus comprises, a hydrogen radical generator configured to generate hydrogen radicals for use in cleaning said radiation transmission assembly or part thereof, and a connection assembly for connection to said radiation transmission assembly.Type: ApplicationFiled: April 9, 2015Publication date: February 16, 2017Applicant: ASML Netherlands B.V.Inventors: Freek Theodorus MOLKENBOER, Jeremy BURKE, Wilhelm CLAUSSEN, Alexander Franciscus DEUTZ, Jerry Don HODO, Cornelia Elizabeth Carolina HULSBOSCH-DAM, Edwin TE SLIGTE, Mayk VAN DEN HURK
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Publication number: 20160187543Abstract: An optical element (50), comprising: a substrate (52), an EUV radiation reflecting multilayer system (51) applied to the substrate, and a protective layer system (60) applied to the multilayer system and having at least a first and a second layer (57, 58). The first layer (57) is arranged closer to the multilayer system (51) than is the second layer (58) and serves as a diffusion barrier for hydrogen. This first layer (57) has a lower solubility for hydrogen than does the second layer (58), which serves for absorbing hydrogen. Also disclosed are an optical system for EUV lithography with at least one such optical element, and a method for treating an optical element in order to remove hydrogen incorporated in at least one layer (57, 58, 59) of the protective layer system and/or in at least one layer (53, 54) of the multilayer system (51).Type: ApplicationFiled: September 15, 2015Publication date: June 30, 2016Inventors: Hermanus Hendricus Petrus Theodorus BEKMAN, Dirk Heinrich EHM, Jeroen HUIJBREGTSE, Arnoldus Jan STORM, Tina GRABER, Irene AMENT, Dries SMEETS, Edwin TE SLIGTE, Alexey KUZNETSOV
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Patent number: 9161427Abstract: Device for generating a plasma discharge near a substrate for patterning the surface of the substrate, comprising a first electrode having a first discharge portion and a second electrode having a second discharge portion, a high voltage source for generating a high voltage difference between the first and the second electrode, and positioning means for positioning the first electrode with respect to the substrate. The device is further provided with an intermediate structure that is, in use, arranged in between the first electrode and the substrate while allowing for positioning the first electrode with respect to the substrate.Type: GrantFiled: February 17, 2010Date of Patent: October 13, 2015Assignee: Vision Dynamics Holding B.V.Inventors: Paulus Petrus Maria Blom, Alquin Alphons Elisabeth Stevens, Laurentia Johanna Huijbregts, Hugo Anton Marie De Haan, Antonius Hubertus Van Schijndel, Edwin Te Sligte, Nicolaas Cornelis Josephus Van Hijningen, Tom Huiskamp
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Patent number: 8980009Abstract: The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.Type: GrantFiled: March 7, 2013Date of Patent: March 17, 2015Assignees: Carl Zeiss SMT GmbH, ASML Netherlands B.V.Inventors: Dirk Heinrich Ehm, Arnold Storm, Johannes Hubertus Josephina Moors, Bastiaan Theodoor Wolschrijn, Thomas Stein, Edwin te Sligte
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Publication number: 20130206720Abstract: Device for generating a plasma discharge near a substrate for patterning the surface of the substrate, comprising a first electrode having a first discharge portion and a second electrode having a second discharge portion, a high voltage source for generating a high voltage difference between the first and the second electrode, and positioning means for positioning the first electrode with respect to the substrate. The device is further provided with an intermediate structure that is, in use, arranged in between the first electrode and the substrate while allowing for positioning the first electrode with respect to the substrate.Type: ApplicationFiled: February 17, 2010Publication date: August 15, 2013Applicant: VISION DYNAMICS HOLDING B.V.Inventors: Paulus Petrus Maria Blom, Alquin Alphons Elisabeth Stevens, Laurentia Johanna Huijbregts, Hugo Anton Marie De Haan, Antonius Hubertus Van Schijndel, Edwin Te Sligte, Nicolaas Cornelis Josephus Van Hijningen, Tom Huiskamp
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Publication number: 20130126226Abstract: The invention relates to a method of manufacturing a support structure for supporting an article in a lithographic process, comprising: providing a substrate having an electrically conductive top layer provided on an insulator; patterning the conductive top layer to provide a patterned electrode structure; and oxidizing the conductive top layer, so as to provide a buried electrode structure having an insulating top surface. In this way a simple buried structure can be provided as electrode structure to conveniently provide an electrostatic clamp. The invention additionally relates to a correspondingly manufactured support structure for supporting an article in a lithographic process.Type: ApplicationFiled: November 1, 2010Publication date: May 23, 2013Applicant: NEDERLANDSE ORGANISATIE VOOR TOEGEPAST- NATUURWETENSCHAPPELIJK ONDERZOEK TNOInventors: Norbertus Benedictus Koster, Marcus Hendrikus Meijerink, Edwin Te Sligte
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Patent number: 8419862Abstract: The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.Type: GrantFiled: May 6, 2010Date of Patent: April 16, 2013Assignees: Carl Zeiss SMT GmbH, ASML Netherlands B.V.Inventors: Dirk Heinrich Ehm, Arnold Storm, Johannes Hubertus Josephina Moors, Bastiaan Theodoor Wolschrijn, Thomas Stein, Edwin te Sligte
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Publication number: 20120006258Abstract: A method of reducing contamination generated by a hydrogen radical generator and deposited on an optical element of a lithographic apparatus includes passing molecular hydrogen over a first part of a metal filament of the hydrogen radical generator, the first part including a metal-oxide, when the temperature of the first part of the metal filament is at a reduction temperature less than or equal to an evaporation temperature of the metal-oxide.Type: ApplicationFiled: June 9, 2011Publication date: January 12, 2012Applicant: ASML Netherlands B.V.Inventors: Gerard Frans Jozef Schasfoort, Jeroen Marcel Huijbregtse, Roeland Nicolaas Maria Vanneer, Arnoldus Jan Storm, Edwin Te Sligte, Antonius Theodorus Wilhelmus Kempen, Wouter Andries Jonker, Timo Huijser
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Publication number: 20100288302Abstract: The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.Type: ApplicationFiled: May 6, 2010Publication date: November 18, 2010Inventors: Dirk Heinrich Ehm, Arnold Storm, Johannes Hubertus Josephina Moors, Bastiaan Theodoor Wolschrijn, Thomas Stein, Edwin te Sligte