Abstract: An optoelectronic device includes a substrate, at least one active layer, formed on the substrate, and made of a material; defects, present in the material, and possessing an energy structure defining: a ground state in the valence band, including first and second spin states, a metastable state in the band gap, an excited state in the conduction band; a device for causing excitation of the active layer, which are configured to: make electrons transition to the excited state, then relax to the second spin state via the metastable state, so that the active layer may emit photons that make electrons transition from the second spin state to the first spin state; or make electrons transition from the second spin state to the excited state, so that the active layer may detect photons that make electrons transition from the first spin state to the second spin state by absorption.