Abstract: Disclosed are optical detection device, system, and method which increase photodetection area and enables omnidirectional and self-aligning photodetection through the use of a fluorescent lens. An optical detection device comprises a fluorescent lens having a light collecting area being a spherical, hemispherical, or cylindrical surface of the fluorescent lens, and a light outcoupling area; and a fluorophore dispersed throughout the light collection area and the fluorescent lens, wherein the fluorophore is excitable by a light beam, which is incident at any position or angle in relation to the spherical surface, to produce a light emission, wherein the light outcoupling area is arranged to allow an extraction of the light emission from the fluorescent lens, wherein the light collecting area is larger than the light outcoupling area.

Abstract: Disclosed are optical detection device, system, and method which increase photodetection area and enables omnidirectional and self-aligning photodetection through the use of a fluorescent lens. An optical detection device comprises a fluorescent lens having a light collecting area being a spherical, hemispherical, or cylindrical surface of the fluorescent lens, and a light outcoupling area; and a fluorophore dispersed throughout the light collection area and the fluorescent lens, wherein the fluorophore is excitable by a light beam, which is incident at any position or angle in relation to the spherical surface, to produce a light emission, wherein the light outcoupling area is arranged to allow an extraction of the light emission from the fluorescent lens, wherein the light collecting area is larger than the light outcoupling area.

Abstract: A light emitting device, a method of fabricating a light emitting device and a method of controlling light emission. The light emitting device includes a plasmonic structure. The plasmonic structure is configured to have a plurality of localized surface plasmon resonances. The light emitting device also includes a broadband light emitting layer having an emission spectrum substantially overlapping wavelengths of the localized surface plasmon resonances. A spacer layer is disposed between the plasmonic structure and the broadband light emitting layer. A color of light emitted by the broadband light emitting layer is tunable by the localized surface plasmon resonances of the plasmonic structure.

Abstract: Various embodiments may relate to a light emitting diode (LED) communication device including a communication interface configured to couple with an electronic device. The LED communication device may also include an electrical interface electrically coupled to the communication interface. The LED communication device may further include a light emitting diode electrically coupled to the electrical interface. The electrical interface may be configured to convert data signals received from the electronic device into driving signals transmitted to the light emitting diode during uplink, and to convert sensing signals received from the light emitting diode into data signals transmitted to the electronic device during downlink. The light emitting diode may be configured to convert the driving signals received from the electrical interface into a plurality of light pulses during uplink, and to convert a plurality of light pulses received by the light emitting diode into the sensing signals during downlink.

Abstract: Various embodiments may relate to a light emitting diode (LED) communication device including a communication interface configured to couple with an electronic device. The LED communication device may also include an electrical interface electrically coupled to the communication interface. The LED communication device may further include a light emitting diode electrically coupled to the electrical interface. The electrical interface may be configured to convert data signals received from the electronic device into driving signals transmitted to the light emitting diode during uplink, and to convert sensing signals received from the light emitting diode into data signals transmitted to the electronic device during downlink. The light emitting diode may be configured to convert the driving signals received from the electrical interface into a plurality of light pulses during uplink, and to convert a plurality of light pulses received by the light emitting diode into the sensing signals during downlink.

Abstract: A light emitting device, a method of fabricating a light emitting device and a method of controlling light emission. The light emitting device includes a plasmonic structure. The plasmonic structure is configured to have a plurality of localized surface plasmon resonances. The light emitting device also includes a broadband light emitting layer having an emission spectrum substantially overlapping wavelengths of the localized surface plasmon resonances. A spacer layer is disposed between the plasmonic structure and the broadband light emitting layer. A color of light emitted by the broadband light emitting layer is tunable by the localized surface plasmon resonances of the plasmonic structure.

Abstract: Various embodiments may relate to a light emitting diode (LED) communication device including a communication interface configured to couple with an electronic device. The LED communication device may also include an electrical interface electrically coupled to the communication interface. The LED communication device may further include a light emitting diode electrically coupled to the electrical interface. The electrical interface may be configured to convert data signals received from the electronic device into driving signals transmitted to the light emitting diode during uplink, and to convert sensing signals received from the light emitting diode into data signals transmitted to the electronic device during downlink. The light emitting diode may be configured to convert the driving signals received from the electrical interface into a plurality of light pulses during uplink, and to convert a plurality of light pulses received by the light emitting diode into the sensing signals during downlink.

Abstract: Various embodiments may relate to a light emitting diode (LED) communication device including a communication interface configured to couple with an electronic device. The LED communication device may also include an electrical interface electrically coupled to the communication interface. The LED communication device may further include a light emitting diode electrically coupled to the electrical interface. The electrical interface may be configured to convert data signals received from the electronic device into driving signals transmitted to the light emitting diode during uplink, and to convert sensing signals received from the light emitting diode into data signals transmitted to the electronic device during downlink The light emitting diode may be configured to convert the driving signals received from the electrical interface into a plurality of light pulses during uplink, and to convert a plurality of light pulses received by the light emitting diode into the sensing signals during downlink.

Abstract: A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped layer on the active layer, and a metal layer on the second-doped layer. The second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion. The first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED. The second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED.

Abstract: A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped layer on the active layer, and a metal layer on the second-doped layer. The second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion. The first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED. The second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED.