Abstract: The present invention relates generally to control schemes for controlling the temperature of a heater plate of a thermal unit, e.g., of a track lithography tool. In accordance with certain embodiments of the invention, a cold wafer compensation offset value is added to an initial target heater plate temperature setpoint, and this setpoint plus offset is used to control the temperature of the heater plate prior to placement of a semiconductor wafer, e.g., via Proportional-Integral-Derivative (PID) control. Further, in accordance with certain embodiments, upon cold wafer placement, the temperature control is turned off until the temperature of the heater plate reaches the initial target heater plate temperature setpoint. The temperature control (e.g., PID control) is then reinstated, and the heater plate and wafer are controlled to steady state.