Patents by Inventor Eerik T. Hantsoo
Eerik T. Hantsoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9932689Abstract: An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.Type: GrantFiled: January 15, 2014Date of Patent: April 3, 2018Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Emanuel M Sachs, James G. Serdy, Eerik T. Hantsoo
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Patent number: 9643342Abstract: A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: GrantFiled: April 11, 2014Date of Patent: May 9, 2017Assignee: 1366 Technologies, Inc.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G. D. Stephen Hudelson, Ralf Jonczyk
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Publication number: 20140220171Abstract: A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: ApplicationFiled: April 11, 2014Publication date: August 7, 2014Applicant: 1366 TECHNOLOGIES, INC.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G.D. Stephen Hudelson, Ralf Jonczyk
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Publication number: 20140124963Abstract: An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.Type: ApplicationFiled: January 15, 2014Publication date: May 8, 2014Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Emanuel M Sachs, James G. Serdy, Eerik T. Hantsoo
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Patent number: 8696810Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: GrantFiled: October 18, 2012Date of Patent: April 15, 2014Assignee: 1366 Technologies, Inc.Inventors: Eerik T. Hantsoo, G. D. Stephen Hudelson, Ralf Jonczyk, Adam M. Lorenz, Emanuel M. Sachs, Richard L. Wallace
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Patent number: 8633483Abstract: An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. Further heating creates a molten zone in space, through which the wafer travels, resulting in recrystallization with a larger grain size. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. Thermal transfer through backing plates minimizes stresses and defects. After recrystallization, the capsule is removed.Type: GrantFiled: June 26, 2008Date of Patent: January 21, 2014Assignee: Massachusetts Institute of TechnologyInventors: Emanuel M. Sachs, James G. Serdy, Eerik T. Hantsoo
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Patent number: 8293009Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: GrantFiled: November 17, 2011Date of Patent: October 23, 2012Assignee: 1366 Technologies Inc.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G. D. Stephen Hudelson, Ralf Jonczyk
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Publication number: 20120067273Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: ApplicationFiled: November 17, 2011Publication date: March 22, 2012Applicant: 1366 TECHNOLOGIES INC.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G. D. Stephen Hudelson, Ralf Jonczyk
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Publication number: 20110247549Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: ApplicationFiled: March 9, 2010Publication date: October 13, 2011Applicant: 1366 TECHNOLOGIES INC.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G. D. Stephen Hudelson, Ralf Jonczyk
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Publication number: 20100295061Abstract: An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. Further heating creates a molten zone in space, through which the wafer travels, resulting in recrystallization with a larger grain size. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. Thermal transfer through backing plates minimizes stresses and defects. After recrystallization, the capsule is removed.Type: ApplicationFiled: June 26, 2008Publication date: November 25, 2010Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Emanuel M. Sachs, James G. Serdy, Eerik T. Hantsoo