Patents by Inventor Effiong Obok

Effiong Obok has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Shallow trench isolation formation with no polish stop
    Patent number: 6090712
    Abstract: An insulated trench isolation structure is formed in a semiconductor substrate omitting a barrier nitride polish stop layer while avoiding substrate damage, thereby simplifying trench formation and improving planarity. After trench fill, polishing is conducted to effect substantial planarization without exposing the substrate surface, thereby avoiding substrate damage. Etching is then conducted to expose the substrate surface. The omission of the barrier nitride polish stop avoids generation of a topographical step at the substrate/trench fill interface, thereby enhancing the accuracy of subsequent photolithographic techniques in forming features with minimal dimensions.
    Type: Grant
    Filed: December 18, 1997
    Date of Patent: July 18, 2000
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Christopher F. Lyons, Basab Bandyopadhyay, Nick Kepler, Olov Karlsson, Larry Wang, Effiong Obok