Abstract: A system comprising: a first high voltage unit that is coupled via a high voltage supply cable to a second high voltage unit; a transformer that is configured to magnetically couple the high voltage supply cable to windings of a transformer; and a detection unit that is configured to monitor a windings signal developed in the windings of the transformer to detect a first high voltage unit arc formed within the first high voltage unit and to detect a second high voltage unit arc formed within the second high voltage unit.

Abstract: A system for zapping a wafer, the system includes a pulse generator; a sensor; a first conductive interface; a second conductive interface; a controller; wherein the pulse generator is configured to generate zapping pulses; wherein the first conductive interface is configured to provide the zapping pulses to a first location of a backside insulating layer of a wafer; wherein the sensor is configured to monitor a coupling between the first conductive interface and the second conductive interface to provide a monitoring result; wherein the monitoring occurs while the second conductive interface contacts a second location of the backside insulating layer; and wherein the controller is configured to control a generation of the zapping pulses in response to the monitoring result.

Abstract: A system for zapping a wafer, the system may include a pulse generation unit that is configured to generate (a) first zapping pulses for causing a breakdown in a first location of a backside insulating layer of a wafer, and (b) second zapping pulses for causing a breakdown in a second location of the backside insulating layer of the wafer; a first conductive interface that is configured to convey the first zapping pulses to the first location, while contacting the first location; a second conductive interface that is configured to convey the second zapping pulses to the second location, while contacting the second location; and wherein the first location differs from the second location.

Abstract: A system for zapping a wafer, the system may include a pulse generation unit that is configured to generate (a) first zapping pulses for causing a breakdown in a first location of a backside insulating layer of a wafer, and (b) second zapping pulses for causing a breakdown in a second location of the backside insulating layer of the wafer; a first conductive interface that is configured to convey the first zapping pulses to the first location, while contacting the first location; a second conductive interface that is configured to convey the second zapping pulses to the second location, while contacting the second location; and wherein the first location differs from the second location.

Abstract: A system comprising: a first high voltage unit that is coupled via a high voltage supply cable to a second high voltage unit; a transformer that is configured to magnetically couple the high voltage supply cable to windings of a transformer; and a detection unit that is configured to monitor a windings signal developed in the windings of the transformer to detect a first high voltage unit arc formed within the first high voltage unit and to detect a second high voltage unit arc formed within the second high voltage unit.

Abstract: A system for zapping a wafer, the system includes a pulse generator; a sensor; a first conductive interface; a second conductive interface; a controller; wherein the pulse generator is configured to generate zapping pulses; wherein the first conductive interface is configured to provide the zapping pulses to a first location of a backside insulating layer of a wafer; wherein the sensor is configured to monitor a coupling between the first conductive interface and the second conductive interface to provide a monitoring result; wherein the monitoring occurs while the second conductive interface contacts a second location of the backside insulating layer; and wherein the controller is configured to control a generation of the zapping pulses in response to the monitoring result.

Abstract: A modulator of a charged particle beam system is arranged to generate a modulation signal that is provided to an inductor, which receives the modulation signal and modulates, by inductance, a supply voltage signal for the charged particle beam system. Modulation of the supply voltage signal changes a focal length of a charged particle beam produced by the charged particle beam system.

Abstract: A modulator of a charged particle beam system is arranged to generate a modulation signal that is provided to an inductor, which receives the modulation signal and modulates, by inductance, a supply voltage signal for the charged particle beam system. Modulation of the supply voltage signal changes a focal length of a charged particle beam produced by the charged particle beam system.

Abstract: An apparatus a method for the application of ultrasound to a location within the body is provided. The apparatus can advantageously operate at a pulse duration below about 100 milliseconds and in the range 0.1 milliseconds to 100 milliseconds and a pulse repetition period below about 1 second and in the range of 1 millisecond to 1 second. Duty ratios over 5 and preferably over 8 are also advantageous. Therapeutic applications of ultrasound such as for assisting in the treatment of medical conditions such as cancer and/or other ailments are also provided.

Abstract: An apparatus and method for the application of ultrasound to a location within the body is provided. The apparatus can advantageously operate at a pulse duration below about 100 milliseconds and in the range 0.1 milliseconds to 100 milliseconds and a pulse repetition period below about 1 second and in the range of 1 millisecond to 1 second. Duty ratios over 5 and preferably over 8 are also advantageous. Therapeutic applications of ultrasound such as for assisting in the treatment of medical conditions such as cancer and/or other ailments are also provided.