Abstract: Disclosed herein is a method that combines two different hologram origination processes in a single photoresist layer by using an interlayer to transfer structures exposed by electron beam lithography into overlapped with dot-matrix hologram areas, and fabricated holographic structures are replicated in multilayer polymer films. Dot-matrix technique is low cost process, which has high origination speed and can be used for the patterning of large areas of holograms with high diffraction efficiency. Electron beam lithography allows the formation of high resolution structures. The method allows combining these two technologies so that the final security device could contain electron beam patterned high resolution diffraction gratings, computer generated holograms, as well as dot-matrix laser patterned large hologram areas with high diffraction efficiency, providing an increased level of protection.

Abstract: The present invention discloses a method that combines two different hologram origination processes in a single photoresist layer by using an interlayer to transfer structures exposed by electron beam lithography into overlapped with dot-matrix hologram areas, and fabricated holographic structures are replicated in multilayer polymer films. Dot-matrix technique is low cost process, which has high origination speed and can be used for the patterning of large areas of holograms with high diffraction efficiency. Electron beam lithography allows the formation of high resolution structures. The proposed manufacturing method allows combining these two technologies so that the final security device could contain electron beam patterned high resolution diffraction gratings, computer generated holograms, as well as dot-matrix laser patterned large hologram areas with high diffraction efficiency, providing an increased level of protection.