Abstract: Plasma encapsulation for electronic and microelectronic components such as OLEDs. The invention relates to a plasma encapsulation for electronic and microelectronic components such as OLEDs. However, a conventional standard plasma coating process is not used; instead, an especially gentle plasma coating process which does not cause any damage to sensitive components such as an OLED is used, such as the pulsed method or the “remote” or “after glow method.

Abstract: In a method of connecting a device to a support, in which method the device comprises at least a first terminal region, and in which method the support comprises at least a second terminal region, electrically conductive, flexible microparticles are initially produced on the first terminal region and/or on the second terminal region. Subsequently the terminal regions are connected via the electrically conductive, flexible microparticles.

Abstract: A method for producing cavities, which are patterned in submicrometer dimensions, in a cavity layer of a semiconductor device, is described. In the method, a process liquid is frozen in the trenches in a process layer which has been patterned by ribs and trenches, then the process liquid is covered with a covering layer and is then expelled from the cavities resulting from the covering of the trenches.

Abstract: The invention relates to a plasma encapsulation for electronic and microelectronic components such as OLEDs. However, a conventional standard plasma coating process is not used; instead, an especially gentle plasma coating process which does not cause any damage to sensitive components such as an OLED is used, such as the pulsed method or the “remote” or “after glow method.

Abstract: Cavities of submicron dimension are in a cavity layer of a semiconductor device. For that purpose, processing material is deposited on ridges of a working layer that is structured from ridges and trenches. The processing material is polymerized and the polymerizing processing material expands over the trenches. Upon covering the trenches, the submicron cavities are formed.

Abstract: A method creates structured cavities with submicrometer dimensions in a cavity layer of a semiconductor device. A processing material that incorporates a swelling agent is deposited on ridges of a working layer that is constructed of ridges and trenches. The processing material expands over the trenches during swelling; and covered cavities thus emerge from the trenches.

Abstract: A tiedown structure including a semiconductor substrate having a chip formed thereon, a kerf region, and a conductive connector forming a connection between the chip and the kerf region. Alternatively, the conductive connector connects an edge seal surrounding the chip and a chip portion. A method for forming a semiconductor structure includes forming a device on a chip, defining a kerf proximate the chip, and forming a conductive connector that connects the device and the kerf. An end of the conductive connector is removed by sawing, etching, or focused ion beam milling. A method for forming a semiconductor structure includes forming a chip on a semiconductor substrate, the chip including a device; forming an edge seal along a perimeter of the chip; and forming a conductive connector that connects the edge seal and the device. A conductive connector portion is removed by etching or focused ion beam milling.

Abstract: Cavities of submicron dimension are in a cavity layer of a semiconductor device. For that purpose, processing material is deposited on ridges of a working layer that is structured from ridges and trenches. The processing material is polymerized and the polymerizing processing material expands over the trenches. Upon covering the trenches, the submicron cavities are formed.

Abstract: In a method of connecting a device to a support, in which method the device comprises at least a first terminal region, and in which method the support comprises at least a second terminal region, electrically conductive, flexible microparticles are initially produced on the first terminal region and/or on the second terminal region. Subsequently the terminal regions are connected via the electrically conductive, flexible microparticles.

Abstract: A method creates structured cavities with submicrometer dimensions in a cavity layer of a semiconductor device. A processing material that incorporates a swelling agent is deposited on ridges of a working layer that is constructed of ridges and trenches. The processing material expands over the trenches during swelling; and covered cavities thus emerge from the trenches.

Abstract: A method for producing cavities, which are patterned in submicrometer dimensions, in a cavity layer of a semiconductor device, is described. In the method, a process liquid is frozen in the trenches in a process layer which has been patterned by ribs and trenches, then the process liquid is covered with a covering layer and is then expelled from the cavities resulting from the covering of the trenches.