Patents by Inventor Eiichi Kikkawa

Eiichi Kikkawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8349698
    Abstract: An integrated semiconductor device and method of manufacturing the same includes leaving one part of a semiconductor layer so that an inclined surface is formed on a trench when forming the trench on a SOI wafer. A thick silicon oxide film (second insulation film) is formed along this incline surface. This thick silicon oxide film prevents oxygen entering a boundary surface between an insulation layer and the semiconductor layer of the SOI wafer within the trench.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: January 8, 2013
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Hironori Aoki, Eiichi Kikkawa
  • Publication number: 20100244183
    Abstract: An integrated semiconductor device and method of manufacturing the same includes leaving one part of a semiconductor layer so that an inclined surface is formed on a trench when forming the trench on a SOI wafer. A thick silicon oxide film (second insulation film) is formed along this incline surface. This thick silicon oxide film prevents oxygen entering a boundary surface between an insulation layer and the semiconductor layer of the SOI wafer within the trench.
    Type: Application
    Filed: January 28, 2010
    Publication date: September 30, 2010
    Applicant: Sanken Electric Co., Ltd.
    Inventors: Hironori AOKI, Eiichi Kikkawa