Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, separate light-emitting portions formed on the conductive layer, a first electrode formed on at least part of an upper surface of each light-emitting portion, and a second electrode formed on the conductive layer adjacent to the light-emitting portions; the first electrode comprising a common switching electrode matrix; the second electrode comprising a common electrode divided such that one second electrode exists in every block; and at least one of bonding pads extending to the first common electrode and the second common electrode being formed on a bonding portion formed on the conductive layer like an island, whereby the bonding pads are separate from each other.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, a first electrodes formed on at least part of an upper surface of each light-emitting portion, a second electrode formed directly on the conductive layer in each block, switching common wirings separately connecting the first electrodes and first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, the first bonding pads and the second bonding pads being arranged longitudinally in a row, and a ratio of the number of the first bonding pads to the number of the second bonding pads being 1:n (n?3).

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, first electrodes each formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, common switching wirings separately connected to the first electrodes, first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, n light-emitting portions (n is an even number) being arranged transversely in each block, and second grooves being formed in the conductive layer between adjacent light-emitting portions such that the second grooves are arranged short and long alternately, with the nearest one to the first groove being short.

Abstract: A light emitting diode array comprises compound semiconductor layers epitaxially grown on a p-type GaAs conductive layer 11 formed on a semi-insulating GaAs substrate 30. The epitaxial layer is isolated and divided into a plurality of light emitting parts 1 which function as a light emitting diode. A Si-doped n-type GaAs buffer layer 31 is interposed between the semi-insulating GaAs substrate 30 and the p-type GaAs conductive layer 11. In the light emitting diode array comprising this epitaxial configuration, it is possible to prevent the short-circuit defect due to diffusion of p-type dopant from the p-type GaAs conductive layer into the semi-insulating GaAs substrate made by the LEC method.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, first electrodes each formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, common switching wirings separately connected to the first electrodes, first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, n light-emitting portions (n is an even number) being arranged transversely in each block, and second grooves being formed in the conductive layer between adjacent light-emitting portions such that the second grooves are arranged short and long alternately, with the nearest one to the first groove being short.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, a first electrodes formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, switching common wirings separately connecting the first electrodes and first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, the first bonding pads and the second bonding pads being arranged longitudinally in a row, and a ratio of the number of the first bonding pads to the number of the second bonding pads being 1:n (n?3).

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, separate light-emitting portions formed on the conductive layer, a first electrode formed on at least part of an upper surface of each light-emitting portion, and a second electrode formed on the conductive layer adjacent to the light-emitting portions; the first electrode comprising a common switching electrode matrix; the second electrode comprising a common electrode divided such that one second electrode exists in every block; and at least one of bonding pads extending to the first common electrode and the second common electrode being formed on a bonding portion formed on the conductive layer like an island, whereby the bonding pads are separate from each other.

Abstract: A LED monolithic array type like emitting device which has a plurality of light emitting parts. The device is particularly suitable as a light source for printers. Each light emitting part has a light emitting diode having a laminate structure. The laminate structure has an end-type GaAs substrate and, epitaxially grown on the n-type substrate in the following order: 1) an n-type GaSa buffer layer, an n-type laminated reflection film formed of layer pairs, each having AlGaAs layers different from each other in aluminum composition ratio, an n-type AlGaAs lower cladding layer, a p-type or undoped AlGaAs active layer, a p-type AlGaAs upper cladding layer and a p-type AlGaAs contact layer. Each layer pair making up the laminated reflection film has an AlX1GA1−X1As layer and an AlX2GA1−X2As layer where X1 and X2 represent the Al composition ratio.

Abstract: A LED monolithic array type like emitting device which has a plurality of light emitting parts. The device is particularly suitable as a light source for printers. Each light emitting part has a light emitting diode having a laminate structure. The laminate structure has an end-type GaAs substrate and, epitaxially grown on the n-type substrate in the following order: 1) an n-type GaSa buffer layer, an n-type laminated reflection film formed of layer pairs, each having AlGaAs layers different from each other in aluminum composition ratio, an n-type AlGaAs lower cladding layer, a p-type or undoped AlGaAs active layer, a p-type AlGaAs upper cladding layer and a p-type AlGaAs contact layer. Each layer pair making up the laminated reflection film has an AlX1GA1−X1As layer and an AlX2GA1−X2As layer where X1 and X2 represent the Al composition ratio.