Patents by Inventor Eiichi Matsusue

Eiichi Matsusue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR HIGH TEMPERATURE ETCHING A HIGH-K GATE STRUCTURE
    Publication number: 20130344701
    Abstract: Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.
    Type: Application
    Filed: June 28, 2013
    Publication date: December 26, 2013
    Inventors: Wei LIU, Eiichi MATSUSUE, Meihua SHEN, Shashank C. DESHMUKH, Anh-Kiet Quang PHAN, David PALAGASHVILI, Michael D. WILLWERTH, Jong I. SHIN, Barrett FINCH, Yohei KAWASE
  • Methods for high temperature etching a high-K material gate structure
    Patent number: 8501626
    Abstract: Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: August 6, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Wei Liu, Eiichi Matsusue, Meihua Shen, Shashank Deshmukh, Anh-Kiet Quang Phan, David Palagashvili, Michael D. Willwerth, Jong I. Shin, Barrett Finch, Yohei Kawase
  • METHODS FOR HIGH TEMPERATURE ETCHING A HIGH-K MATERIAL GATE STRUCTURE
    Publication number: 20090004870
    Abstract: Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.
    Type: Application
    Filed: June 25, 2008
    Publication date: January 1, 2009
    Inventors: Wei Liu, Eiichi Matsusue, Meihua Shen, Shashank Deshmukh, Anh-Kiet Quang Phan, David Palagashvili, Michael D. Willwerth, Jong I. Shin, Barrett Finch, Yohei Kawase