Patents by Inventor Eiichi MIZUTA

Eiichi MIZUTA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing semiconductor device
    Patent number: 10164058
    Abstract: A semiconductor device with a high radiation tolerance is provided. A semiconductor device comprising a semiconductor substrate, a first body region and a second body region provided on a front surface side of the semiconductor substrate, a neck portion provided between the first body region and the second body region, a first source region formed within the first body region and a second source region formed within the second body region, a first gate electrode provided to face the first body region between the first source region and the neck portion, a second gate electrode provided to face the second body region between the second source region and the neck portion, and an insulating film continuously provided between the first gate electrode and the semiconductor substrate, between the second gate electrode and the semiconductor substrate, and on the front surface side of the neck portion, is provided.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: December 25, 2018
    Assignees: FUJI ELECTRIC CO., LTD., Japan Aerospace Exploration Agency
    Inventors: Shuhei Tatemichi, Shunji Takenoiri, Masanori Inoue, Yuji Kumagai, Satoshi Kuboyama, Eiichi Mizuta
  • Semiconductor device and method of manufacturing semiconductor device
    Patent number: 9842912
    Abstract: A semiconductor device with a high radiation tolerance is provided. A semiconductor device comprising a semiconductor substrate, a first body region and a second body region provided on a front surface side of the semiconductor substrate, a neck portion provided between the first body region and the second body region, a first source region formed within the first body region and a second source region formed within the second body region, a first gate electrode provided to face the first body region between the first source region and the neck portion, a second gate electrode provided to face the second body region between the second source region and the neck portion, and an insulating film continuously provided between the first gate electrode and the semiconductor substrate, between the second gate electrode and the semiconductor substrate, and on the front surface side of the neck portion, is provided.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: December 12, 2017
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Shuhei Tatemichi, Shunji Takenoiri, Masanori Inoue, Yuji Kumagai, Satoshi Kuboyama, Eiichi Mizuta
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20170301764
    Abstract: A semiconductor device with a high radiation tolerance is provided. A semiconductor device comprising a semiconductor substrate, a first body region and a second body region provided on a front surface side of the semiconductor substrate, a neck portion provided between the first body region and the second body region, a first source region formed within the first body region and a second source region formed within the second body region, a first gate electrode provided to face the first body region between the first source region and the neck portion, a second gate electrode provided to face the second body region between the second source region and the neck portion, and an insulating film continuously provided between the first gate electrode and the semiconductor substrate, between the second gate electrode and the semiconductor substrate, and on the front surface side of the neck portion, is provided.
    Type: Application
    Filed: June 27, 2017
    Publication date: October 19, 2017
    Inventors: Shuhei TATEMICHI, Shunji TAKENOIRI, Masanori INOUE, Yuji KUMAGAI, Satoshi KUBOYAMA, Eiichi MIZUTA