Patents by Inventor Eiichi Ozawa
Eiichi Ozawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10266938Abstract: A deposition method includes: introducing a gas into an airtight container containing electrically insulated raw material particles to generate an aerosol of the raw material particles; transferring the aerosol to a deposition chamber through a transfer tubing connected to the airtight container, the deposition chamber having a pressure maintained to be lower than that of the airtight container; injecting the aerosol from a nozzle mounted on a tip of the transfer tubing toward a target placed on the deposition chamber to cause the raw material particles to collide with the target, thereby causing the raw material particles to be positively charged; generating fine particles of the raw material particles by discharge of the charged raw material particles; and depositing the fine particles on a substrate placed on the deposition chamber.Type: GrantFiled: July 31, 2017Date of Patent: April 23, 2019Assignee: Fuchita Nanotechnology Ltd.Inventors: Eiji Fuchita, Eiji Tokizaki, Eiichi Ozawa
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Publication number: 20170327939Abstract: A deposition method includes: introducing a gas into an airtight container containing electrically insulated raw material particles to generate an aerosol of the raw material particles; transferring the aerosol to a deposition chamber through a transfer tubing connected to the airtight container, the deposition chamber having a pressure maintained to be lower than that of the airtight container; injecting the aerosol from a nozzle mounted on a tip of the transfer tubing toward a target placed on the deposition chamber to cause the raw material particles to collide with the target, thereby causing the raw material particles to be positively charged; generating fine particles of the raw material particles by discharge of the charged raw material particles; and depositing the fine particles on a substrate placed on the deposition chamber.Type: ApplicationFiled: July 31, 2017Publication date: November 16, 2017Inventors: Eiji Fuchita, Eiji Tokizaki, Eiichi Ozawa
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Patent number: 9752227Abstract: A deposition method includes: introducing a gas into an airtight container containing electrically insulated raw material particles to generate an aerosol of the raw material particles; transferring the aerosol to a deposition chamber through a transfer tubing connected to the airtight container, the deposition chamber having a pressure maintained to be lower than that of the airtight container; injecting the aerosol from a nozzle mounted on a tip of the transfer tubing toward a target placed on the deposition chamber to cause the raw material particles to collide with the target, thereby causing the raw material particles to be positively charged; generating fine particles of the raw material particles by discharge of the charged raw material particles; and depositing the fine particles on a substrate placed on the deposition chamber.Type: GrantFiled: February 19, 2015Date of Patent: September 5, 2017Assignee: FUCHITA NANOTECHNOLOGY LTD.Inventors: Eiji Fuchita, Eiji Tokizaki, Eiichi Ozawa
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Publication number: 20150376771Abstract: A deposition method includes: introducing a gas into an airtight container containing electrically insulated raw material particles to generate an aerosol of the raw material particles; transferring the aerosol to a deposition chamber through a transfer tubing connected to the airtight container, the deposition chamber having a pressure maintained to be lower than that of the airtight container; injecting the aerosol from a nozzle mounted on a tip of the transfer tubing toward a target placed on the deposition chamber to cause the raw material particles to collide with the target, thereby causing the raw material particles to be positively charged; generating fine particles of the raw material particles by discharge of the charged raw material particles; and depositing the fine particles on a substrate placed on the deposition chamber.Type: ApplicationFiled: February 19, 2015Publication date: December 31, 2015Inventors: Eiji Fuchita, Eiji Tokizaki, Eiichi Ozawa
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Patent number: 8877297Abstract: A deposition method is provided to enable fine particles having a relatively large particle diameter, for example, a diameter larger than 0.5 ?m, to be stably deposited on a substrate. The fine particles with insulating surface are placed in an airtight container, and a carrier gas is introduced into the container, triboelectrically charging the fine particles and generating an aerosol of the fine particles. The fine particles are charged by friction with the inner surface of a transfer tubing connected to the container, and the aerosol is conveyed via such tubing to a deposition chamber that is maintained at a pressure lower than that in the airtight container. The charged fine particles are deposited on a substrate placed in the deposition chamber.Type: GrantFiled: December 15, 2010Date of Patent: November 4, 2014Assignee: Fuchita Nanotechnology Ltd.Inventors: Eiji Fuchita, Eiji Tokizaki, Eiichi Ozawa
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Publication number: 20130280414Abstract: [Object] To provide a deposition method that enables fine particles having a relatively large particle diameter (at least larger than 0.5 ?m diameter) to be more stably deposited on a substrate by using a simple configuration. [Solving Means] In the deposition method, fine particles P whose surface is at least insulative are placed in an airtight container 2, and a carrier gas is introduced into the container, thereby triboelectrically charging the fine particles and generating an aerosol A of the fine particles. The fine particles in question are charged by friction with the inner surface of a transfer tubing 6 connected to the container, and the aerosol is conveyed via such tubing to a deposition chamber 3 which is maintained at a pressure lower than that in the airtight container. The charged fine particles are deposited on a substrate S placed in the deposition chamber.Type: ApplicationFiled: December 15, 2010Publication date: October 24, 2013Applicant: FUCHITA NANOTECHNOLOGY LTD.Inventors: Eiji Fuchita, Eiji Tokizaki, Eiichi Ozawa
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Patent number: 5677480Abstract: A method of detecting a malfunction or failure of a pressure regulator in a corrosive or reactive gas distribution system while in use involves continuously measuring or monitoring the output pressure of the pressure regulator, both in the presence and the absence of gas flow. The onset of a malfunction of the pressure regulator can be predicted when the differential output pressure between flowing and non-flowing gas fluctuates highly and increases gradually. Failure of the pressure regulator or of the total system is detected when the differential output pressure in the presence and absence of flowing gas exceeds some experimentally determined value.Type: GrantFiled: February 24, 1995Date of Patent: October 14, 1997Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges ClaudeInventors: A. Nimal Liyanage, Eiichi Ozawa, Kazuo Yokogi, Jean-Marie Friedt
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Patent number: 5396039Abstract: A process to avoid or limit corrosion at the junction of two piping comprising devices welded together, said piping comprising devices being adapted to flow corrosive gases through them, said process comprising the steps of:a) providing a first piping comprising device and connecting it to an inert gas source;b) purging it with an inert gas comprising substantially not more than 10 ppb of an oxidizing gas selected from the group consisting of oxygen, carbon dioxide, water vapor or mixtures thereof, said inert gas flowing from a first opening to a second opening of said piping comprising device;c) providing a second pipe comprising device in flow communication with the first one, while continuing to purge the first piping comprising device;d) welding the two piping comprising devices, said welding being carried out under an inert gas atmosphere; ande) repeating steps c and d if necessary.Type: GrantFiled: November 24, 1993Date of Patent: March 7, 1995Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges ClaudeInventors: Henri Chevrel, Taeko Hattori, Hideki Takagi, Eiichi Ozawa, Jean-Marie Friedt
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Patent number: 5298296Abstract: A process for coating powders with ultrafine particles of silicon, silicon oxide, silicon nitride or alloys thereof, entailing:a) introducing a reactant gas into a bed of core powders, thereby uniformly suspending the core powders in the reactant gas,b) entraining the uniformly suspended core powders into a chemical vapor deposition (CVD) reactor,c) selectively forming ultrafine particles of silicon, silicon oxide, silicon nitride or alloys thereof in the gas phase by homogeneous deposition of the reactant gas, while minimizing core powder growth by CVD at surfaces of suspended core powders, andd) coating the core powders with the ultrafine particles of silicon, silicon oxide, silicon nitride or alloys thereof, by introducing hot inert gas into the uniformly suspended core powders in the reactant gas.Type: GrantFiled: January 21, 1993Date of Patent: March 29, 1994Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges ClaudeInventors: Toshinori Kojima, Masahiko Matsukata, Eiichi Ozawa, Jean-Marie Friedt
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Patent number: 5254369Abstract: The invention relates to a method of forming a silicon diffusion and/or overlay coating on the surface of a metallic substrate comprising the steps of introducing the sample into a cold wall Low Pressure Chemical Vapor Deposition (LPCVD) enclosure, evacuating the enclosure up to a pressure P.sub.1 which is lower than 0.5 Torr, maintaining said pressure P.sub.1 while heating up said sample to a temperature which is comprised between about room temperature and about 300.degree. C., bringing under same pressure P1 the sample to the CVD temperature comprised between about 50.degree. C. and 1000.degree. C., introducing a gas or gas mixture comprising at least one silicon hydride gas, maintaining the pressure inside the enclosure between about 0.Type: GrantFiled: May 5, 1992Date of Patent: October 19, 1993Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges ClaudeInventors: Juichi Arai, Eiichi Ozawa, Jean-Marie Friedt