Patents by Inventor Eiichi Sekimoto
Eiichi Sekimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120867Abstract: A motor control method for transferring an object to be transferred by a moving object that moves by driving of a motor in a substrate processing apparatus, includes: a data acquisition process of acquiring, at different times, pieces of drive data which relate to the driving of the motor and vary with heat generation of the motor; and a transfer process of transferring the object to be transferred by controlling current to be supplied to the motor, based on each of the pieces of drive data, to compensate for displacement of the object to be transferred from a target transfer position due to the heat generation of the motor.Type: ApplicationFiled: October 4, 2023Publication date: April 11, 2024Inventors: Youichi MASAKI, Mitsuteru YANO, Eiichi SEKIMOTO, Tsuyoshi OTSUKA, Akihiro TERAMOTO, Teppei ITO, Koji TAKAYANAGI
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Patent number: 11612017Abstract: There is provided a substrate processing apparatus, including: a substrate holding/rotating part configured to hold a substrate on a mounting table and rotate the substrate; a laser irradiation head configured to irradiate a laser beam toward a lower surface of the mounting table; and a controller configured to control at least the rotation of the substrate holding/rotating part and the irradiation of the laser beam. The laser irradiation head is fixed below the mounting table so as to be spaced apart from the mounting table. The controller controls the laser irradiation head to irradiate the laser beam when the mounting table is rotated by the substrate holding/rotating part.Type: GrantFiled: November 5, 2019Date of Patent: March 21, 2023Assignee: TOKYO ELECTRON LIMITEDInventor: Eiichi Sekimoto
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Patent number: 11476136Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.Type: GrantFiled: October 31, 2019Date of Patent: October 18, 2022Assignee: Tokyo Electron LimitedInventors: Kenichi Shigetomi, Takeshi Saikusa, Eiichi Sekimoto, Takayuki Fukudome, Kousuke Yoshihara, Suguru Enokida, Kazuhiro Takeshita, Kazuto Umeki
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Patent number: 11469116Abstract: There is provided a substrate processing apparatus, including: a substrate holder configured to hold a substrate with a surface of the substrate on which a concavo-convex pattern is formed oriented upward; a liquid supply unit configured to supply a processing liquid to the substrate held by the substrate holder to form a liquid film at least in a concave portion of the concavo-convex pattern; a heating unit configured to irradiate the substrate held by the substrate holder or the liquid film with a laser beam for heating the liquid film; and a heating controller configured to control the heating unit, wherein the heating controller controls the heating unit to expose the entire concave portion in a depth direction from the processing liquid by irradiating the laser beam onto the substrate or the liquid film from the heating unit.Type: GrantFiled: July 25, 2019Date of Patent: October 11, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Shoichiro Hidaka, Boui Ikeda, Eiichi Sekimoto, Kazuya Iwanaga, Masato Hayashi
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Patent number: 11087983Abstract: A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to be treated of the substrate mounted on the hot plate, the thermal treatment apparatus includes: a control unit which controls at least a temperature of the hot plate, and a temperature measuring unit which measures a temperature of the lid body, wherein the control unit is configured to perform, when a set temperature of the hot plate is changed, correction of a heating amount by the hot plate for obtaining the set temperature after change, based on the temperature of the lid body measured by the temperature measuring unit.Type: GrantFiled: November 28, 2017Date of Patent: August 10, 2021Assignee: Tokyo Electron LimitedInventors: Eiichi Sekimoto, Takeshi Saikusa, Hiroshi Seko
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Publication number: 20200146111Abstract: There is provided a substrate processing apparatus, including: a substrate holding/rotating part configured to hold a substrate on a mounting table and rotate the substrate; a laser irradiation head configured to irradiate a laser beam toward a lower surface of the mounting table; and a controller configured to control at least the rotation of the substrate holding/rotating part and the irradiation of the laser beam. The laser irradiation head is fixed below the mounting table so as to be spaced apart from the mounting table. The controller controls the laser irradiation head to irradiate the laser beam when the mounting table is rotated by the substrate holding/rotating part.Type: ApplicationFiled: November 5, 2019Publication date: May 7, 2020Inventor: Eiichi SEKIMOTO
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Publication number: 20200066559Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.Type: ApplicationFiled: October 31, 2019Publication date: February 27, 2020Applicant: Tokyo Electron LimitedInventors: Kenichi Shigetomi, Takeshi Saikusa, Eiichi Sekimoto, Takayuki Fukudome, Kousuke Yoshihara, Suguru Enokida, Kazuhiro Takeshita, Kazuto Umeki
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Publication number: 20200035517Abstract: There is provided a substrate processing apparatus, including: a substrate holder configured to hold a substrate with a surface of the substrate on which a concavo-convex pattern is formed oriented upward; a liquid supply unit configured to supply a processing liquid to the substrate held by the substrate holder to form a liquid film at least in a concave portion of the concavo-convex pattern; a heating unit configured to irradiate the substrate held by the substrate holder or the liquid film with a laser beam for heating the liquid film; and a heating controller configured to control the heating unit, wherein the heating controller controls the heating unit to expose the entire concave portion in a depth direction from the processing liquid by irradiating the laser beam onto the substrate or the liquid film from the heating unit.Type: ApplicationFiled: July 25, 2019Publication date: January 30, 2020Inventors: Shoichiro HIDAKA, Boui IKEDA, Eiichi SEKIMOTO, Kazuya IWANAGA, Masato HAYASHI
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Patent number: 10504757Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.Type: GrantFiled: December 14, 2016Date of Patent: December 10, 2019Assignee: Tokyo Electron LimitedInventors: Kenichi Shigetomi, Takeshi Saikusa, Eiichi Sekimoto, Takayuki Fukudome, Kousuke Yoshihara, Suguru Enokida, Kazuhiro Takeshita, Kazuto Umeki
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Publication number: 20180182611Abstract: A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to be treated of the substrate mounted on the hot plate, the thermal treatment apparatus includes: a control unit which controls at least a temperature of the hot plate, and a temperature measuring unit which measures a temperature of the lid body, wherein the control unit is configured to perform, when a set temperature of the hot plate is changed, correction of a heating amount by the hot plate for obtaining the set temperature after change, based on the temperature of the lid body measured by the temperature measuring unit.Type: ApplicationFiled: November 28, 2017Publication date: June 28, 2018Inventors: Eiichi SEKIMOTO, Takeshi SAIKUSA, Hiroshi SEKO
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Publication number: 20170170040Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.Type: ApplicationFiled: December 14, 2016Publication date: June 15, 2017Applicant: Tokyo Electron LimitedInventors: Kenichi SHIGETOMI, Takeshi SAIKUSA, Eiichi SEKIMOTO, Takayuki FUKUDOME, Kousuke YOSHIHARA, Suguru ENOKIDA, Kazuhiro TAKESHITA, Kazuto UMEKI
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Patent number: 7868270Abstract: A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.Type: GrantFiled: January 30, 2008Date of Patent: January 11, 2011Assignee: Tokyo Electron LimitedInventors: Jun Ookura, Eiichi Sekimoto, Hisakazu Nakayama
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Patent number: 7755003Abstract: A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points.Type: GrantFiled: December 27, 2007Date of Patent: July 13, 2010Assignee: Tokyo Electron LimitedInventors: Jun Ookura, Eiichi Sekimoto, Hisakazu Nakayama
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Patent number: 7517217Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.Type: GrantFiled: September 20, 2005Date of Patent: April 14, 2009Assignee: Tokyo Electron LimitedInventors: Masatoshi Deguchi, Eiichi Sekimoto, Koichi Asaka, Yuji Matsuyama
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Publication number: 20080283515Abstract: A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.Type: ApplicationFiled: January 30, 2008Publication date: November 20, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Jun OOKURA, Eiichi SEKIMOTO, Hisakazu NAKAYAMA
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Publication number: 20080156785Abstract: A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points.Type: ApplicationFiled: December 27, 2007Publication date: July 3, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Jun Ookura, Eiichi Sekimoto, Hisakazu Nakayama
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Publication number: 20060005420Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.Type: ApplicationFiled: September 20, 2005Publication date: January 12, 2006Inventors: Masatoshi Deguchi, Eiichi Sekimoto, Koichi Asaka, Yuji Matsuyama
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Patent number: 6969538Abstract: The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.Type: GrantFiled: September 7, 2001Date of Patent: November 29, 2005Assignee: Tokyo Electron LimitedInventors: Masatoshi Deguchi, Eiichi Sekimoto, Koichi Asaka, Yuji Matsuyama
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Patent number: 6659661Abstract: The present invention is a substrate processing apparatus for performing processing of a substrate including: a heat treatment unit provided in a casing of the processing apparatus and having a heating section in which a heat treatment of the substrate is performed; a duct provided on a side part on the heating section side of the casing; and a cooling flow passage provided in the duct for allowing a cooling fluid to flow therethrough. Heat generated from the heating section is prevented from conducting by an air current flowing in the duct, and further the heat is absorbed by the cooling fluid. Therefore, it is possible to prevent the heat from conducting to the outside of the casing.Type: GrantFiled: February 21, 2002Date of Patent: December 9, 2003Assignee: Tokyo Electron LimitedInventors: Masatoshi Deguchi, Eiichi Sekimoto
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Patent number: 6573031Abstract: A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed.Type: GrantFiled: December 18, 2001Date of Patent: June 3, 2003Assignee: Tokyo Electron LimitedInventors: Hiroshi Shinya, Kazuyoshi Mizumoto, Kazuhisa Hayashida, Eiichi Sekimoto