Patents by Inventor Eiichi Sekimoto

Eiichi Sekimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120867
    Abstract: A motor control method for transferring an object to be transferred by a moving object that moves by driving of a motor in a substrate processing apparatus, includes: a data acquisition process of acquiring, at different times, pieces of drive data which relate to the driving of the motor and vary with heat generation of the motor; and a transfer process of transferring the object to be transferred by controlling current to be supplied to the motor, based on each of the pieces of drive data, to compensate for displacement of the object to be transferred from a target transfer position due to the heat generation of the motor.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 11, 2024
    Inventors: Youichi MASAKI, Mitsuteru YANO, Eiichi SEKIMOTO, Tsuyoshi OTSUKA, Akihiro TERAMOTO, Teppei ITO, Koji TAKAYANAGI
  • Patent number: 11612017
    Abstract: There is provided a substrate processing apparatus, including: a substrate holding/rotating part configured to hold a substrate on a mounting table and rotate the substrate; a laser irradiation head configured to irradiate a laser beam toward a lower surface of the mounting table; and a controller configured to control at least the rotation of the substrate holding/rotating part and the irradiation of the laser beam. The laser irradiation head is fixed below the mounting table so as to be spaced apart from the mounting table. The controller controls the laser irradiation head to irradiate the laser beam when the mounting table is rotated by the substrate holding/rotating part.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: March 21, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Eiichi Sekimoto
  • Patent number: 11476136
    Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: October 18, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Kenichi Shigetomi, Takeshi Saikusa, Eiichi Sekimoto, Takayuki Fukudome, Kousuke Yoshihara, Suguru Enokida, Kazuhiro Takeshita, Kazuto Umeki
  • Patent number: 11469116
    Abstract: There is provided a substrate processing apparatus, including: a substrate holder configured to hold a substrate with a surface of the substrate on which a concavo-convex pattern is formed oriented upward; a liquid supply unit configured to supply a processing liquid to the substrate held by the substrate holder to form a liquid film at least in a concave portion of the concavo-convex pattern; a heating unit configured to irradiate the substrate held by the substrate holder or the liquid film with a laser beam for heating the liquid film; and a heating controller configured to control the heating unit, wherein the heating controller controls the heating unit to expose the entire concave portion in a depth direction from the processing liquid by irradiating the laser beam onto the substrate or the liquid film from the heating unit.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: October 11, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro Hidaka, Boui Ikeda, Eiichi Sekimoto, Kazuya Iwanaga, Masato Hayashi
  • Patent number: 11087983
    Abstract: A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to be treated of the substrate mounted on the hot plate, the thermal treatment apparatus includes: a control unit which controls at least a temperature of the hot plate, and a temperature measuring unit which measures a temperature of the lid body, wherein the control unit is configured to perform, when a set temperature of the hot plate is changed, correction of a heating amount by the hot plate for obtaining the set temperature after change, based on the temperature of the lid body measured by the temperature measuring unit.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: August 10, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Eiichi Sekimoto, Takeshi Saikusa, Hiroshi Seko
  • Publication number: 20200146111
    Abstract: There is provided a substrate processing apparatus, including: a substrate holding/rotating part configured to hold a substrate on a mounting table and rotate the substrate; a laser irradiation head configured to irradiate a laser beam toward a lower surface of the mounting table; and a controller configured to control at least the rotation of the substrate holding/rotating part and the irradiation of the laser beam. The laser irradiation head is fixed below the mounting table so as to be spaced apart from the mounting table. The controller controls the laser irradiation head to irradiate the laser beam when the mounting table is rotated by the substrate holding/rotating part.
    Type: Application
    Filed: November 5, 2019
    Publication date: May 7, 2020
    Inventor: Eiichi SEKIMOTO
  • Publication number: 20200066559
    Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.
    Type: Application
    Filed: October 31, 2019
    Publication date: February 27, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Kenichi Shigetomi, Takeshi Saikusa, Eiichi Sekimoto, Takayuki Fukudome, Kousuke Yoshihara, Suguru Enokida, Kazuhiro Takeshita, Kazuto Umeki
  • Publication number: 20200035517
    Abstract: There is provided a substrate processing apparatus, including: a substrate holder configured to hold a substrate with a surface of the substrate on which a concavo-convex pattern is formed oriented upward; a liquid supply unit configured to supply a processing liquid to the substrate held by the substrate holder to form a liquid film at least in a concave portion of the concavo-convex pattern; a heating unit configured to irradiate the substrate held by the substrate holder or the liquid film with a laser beam for heating the liquid film; and a heating controller configured to control the heating unit, wherein the heating controller controls the heating unit to expose the entire concave portion in a depth direction from the processing liquid by irradiating the laser beam onto the substrate or the liquid film from the heating unit.
    Type: Application
    Filed: July 25, 2019
    Publication date: January 30, 2020
    Inventors: Shoichiro HIDAKA, Boui IKEDA, Eiichi SEKIMOTO, Kazuya IWANAGA, Masato HAYASHI
  • Patent number: 10504757
    Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: December 10, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Kenichi Shigetomi, Takeshi Saikusa, Eiichi Sekimoto, Takayuki Fukudome, Kousuke Yoshihara, Suguru Enokida, Kazuhiro Takeshita, Kazuto Umeki
  • Publication number: 20180182611
    Abstract: A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to be treated of the substrate mounted on the hot plate, the thermal treatment apparatus includes: a control unit which controls at least a temperature of the hot plate, and a temperature measuring unit which measures a temperature of the lid body, wherein the control unit is configured to perform, when a set temperature of the hot plate is changed, correction of a heating amount by the hot plate for obtaining the set temperature after change, based on the temperature of the lid body measured by the temperature measuring unit.
    Type: Application
    Filed: November 28, 2017
    Publication date: June 28, 2018
    Inventors: Eiichi SEKIMOTO, Takeshi SAIKUSA, Hiroshi SEKO
  • Publication number: 20170170040
    Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.
    Type: Application
    Filed: December 14, 2016
    Publication date: June 15, 2017
    Applicant: Tokyo Electron Limited
    Inventors: Kenichi SHIGETOMI, Takeshi SAIKUSA, Eiichi SEKIMOTO, Takayuki FUKUDOME, Kousuke YOSHIHARA, Suguru ENOKIDA, Kazuhiro TAKESHITA, Kazuto UMEKI
  • Patent number: 7868270
    Abstract: A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.
    Type: Grant
    Filed: January 30, 2008
    Date of Patent: January 11, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Jun Ookura, Eiichi Sekimoto, Hisakazu Nakayama
  • Patent number: 7755003
    Abstract: A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points.
    Type: Grant
    Filed: December 27, 2007
    Date of Patent: July 13, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Jun Ookura, Eiichi Sekimoto, Hisakazu Nakayama
  • Patent number: 7517217
    Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: April 14, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Masatoshi Deguchi, Eiichi Sekimoto, Koichi Asaka, Yuji Matsuyama
  • Publication number: 20080283515
    Abstract: A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.
    Type: Application
    Filed: January 30, 2008
    Publication date: November 20, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jun OOKURA, Eiichi SEKIMOTO, Hisakazu NAKAYAMA
  • Publication number: 20080156785
    Abstract: A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points.
    Type: Application
    Filed: December 27, 2007
    Publication date: July 3, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jun Ookura, Eiichi Sekimoto, Hisakazu Nakayama
  • Publication number: 20060005420
    Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.
    Type: Application
    Filed: September 20, 2005
    Publication date: January 12, 2006
    Inventors: Masatoshi Deguchi, Eiichi Sekimoto, Koichi Asaka, Yuji Matsuyama
  • Patent number: 6969538
    Abstract: The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.
    Type: Grant
    Filed: September 7, 2001
    Date of Patent: November 29, 2005
    Assignee: Tokyo Electron Limited
    Inventors: Masatoshi Deguchi, Eiichi Sekimoto, Koichi Asaka, Yuji Matsuyama
  • Patent number: 6659661
    Abstract: The present invention is a substrate processing apparatus for performing processing of a substrate including: a heat treatment unit provided in a casing of the processing apparatus and having a heating section in which a heat treatment of the substrate is performed; a duct provided on a side part on the heating section side of the casing; and a cooling flow passage provided in the duct for allowing a cooling fluid to flow therethrough. Heat generated from the heating section is prevented from conducting by an air current flowing in the duct, and further the heat is absorbed by the cooling fluid. Therefore, it is possible to prevent the heat from conducting to the outside of the casing.
    Type: Grant
    Filed: February 21, 2002
    Date of Patent: December 9, 2003
    Assignee: Tokyo Electron Limited
    Inventors: Masatoshi Deguchi, Eiichi Sekimoto
  • Patent number: 6573031
    Abstract: A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: June 3, 2003
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Shinya, Kazuyoshi Mizumoto, Kazuhisa Hayashida, Eiichi Sekimoto