Abstract: A method for manufacturing a glass panel unit includes an assembling step, a gas exhausting step, and a sealing step. At least one of a first glass pane or a second glass pane includes a low-emissivity film. In a situation where the low-emissivity film is heated at a temperature increase rate of 4° C./min before a peripheral wall is melted, a ratio of an emission quantity of a rare gas emitted from the low-emissivity film at a deformation temperature of the partition to an emission quantity of the rare gas emitted from the low-emissivity film at 100° C. is equal to or less than 2.0.

Abstract: A glass panel unit includes: a first panel including a glass pane; a second panel including another glass pane; a sealing portion; an exhaust port; and a printed portion. The second panel is arranged to face the first panel. The sealing portion is formed in a frame shape and hermetically bonds respective peripheral edge portions of the first and second panels to create an evacuated, hermetically sealed space between the first panel and the second panel. The exhaust port is provided for one panel selected from the first and second panels. A port sealing member hermetically seals the exhaust port. The printed portion is provided for the other panel selected from the first and second panels. The printed portion is located in an area, facing the exhaust port, of one surface of the other panel. The one surface either faces toward, or faces away from, the hermetically sealed space.

Abstract: A sealing head includes a frame, an intake unit, a pressing pin, and a non-contact heater. The frame is configured to be detachably attached to a work in progress of a glass panel unit. The intake unit, the pressing pin, and the non-contact heater are supported by the frame. The work in progress includes a first substrate, a second substrate, a bonding part, and an internal space. The first substrate has an evacuation port. The bonding part bonds the first substrate and the second substrate together. The internal space is formed by being surrounded by the first substrate, the second substrate, and the bonding part. The internal space is communicated with the evacuation port. The pressing pin is configured to press, toward the second substrate, a sealing material which is heat fusible and which is inserted into the evacuation port. The non-contact heater is configured to locally heat the sealing material in a non-contact manner via the second substrate.

Abstract: A glass panel unit includes: a pair of glass panels arranged to face each other; and a frame member disposed between the pair of glass panels to hermetically bond the pair of glass panels together. The frame member includes: a body; and a reinforcing portion. The body has a frame shape and includes: a first part containing a first sealing material having a first softening point; and a second part containing a second sealing material having a second softening point that is higher than the first softening point. The reinforcing portion contains a third sealing material having a third softening point that is higher than the first softening point. The reinforcing portion is adjacent to the first part in a space surrounded with the pair of glass panels and the body.

Abstract: A glass panel unit manufacturing method includes a bonding step, an insertion step, an evacuation step, and a sealing step. The bonding step includes bonding a first substrate having an evacuation port and a second substrate with a bonding material having a frame shape to form an internal space. The insertion step includes inserting a sealing material into the evacuation port. The evacuation step includes evacuating the internal space by connecting an exhaust device to the evacuation port and driving the exhaust device. The sealing step includes sealing the evacuation port with the sealing material while an evacuated state in the internal space is maintained. In the sealing step, a measured value by a pressure gauge is monitored while the sealing material is heated, softening of the sealing material is detected based on the transition of the measured value, and heating of the sealing material is stopped.

Abstract: An air purifier includes: a housing; a fan in the housing; an outlet in a top face of the housing, air being blown out via the outlet; an air passage spatially connecting the fan to the outlet; and an illumination unit configured to illuminate the air passage, wherein the air passage includes an upstream, first air passage and a downstream, second air passage, the first air passage extends upwards, the second air passage has a curved surface or an inclined surface inclined with respect to the first air passage, and the illumination unit illuminates the curved surface or the inclined surface.

Abstract: An air purifier includes: a housing; an outlet in a top face of the housing, air being blown out via the outlet; a wall section in the housing, the wall section forming an air passage spatially continuous with the outlet; and a louver configured to change a direction of the air when rotated, wherein the louver extends from the air passage toward the outlet and includes a curved face section curved toward a front of the housing.

Abstract: An air purifier includes: a housing; a fan in the housing; an outlet in a top face of the housing, air being blown out via the outlet; an air passage spatially connecting the fan to the outlet; and an illumination unit configured to illuminate the air passage, wherein the air passage includes an upstream, first air passage and a downstream, second air passage, the first air passage extends upwards, the second air passage has a curved surface or an inclined surface inclined with respect to the first air passage, and the illumination unit illuminates the curved surface or the inclined surface.

Abstract: It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.

Abstract: A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R2/R1, which is not less than 0.4 to not more than 1.0, where R1 is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R2 is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.

Abstract: A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section. The contact heat resistance Rg between the heat flow control section and the heat flow transmitting section is not less than 1.0×10?6 m2K/W to not more than 5.0×10?3 m2K/W. The heat flow control section is made of a material having a coefficient of thermal conductivity 5 to 20 times that of the wafer.

Abstract: It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.

Abstract: A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R2/R1, which is not less than 0.4 to not more than 1.0, where R1 is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R2 is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.

Abstract: A vapor-phase growth apparatus includes: a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes: a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section, for transmitting heat to the wafer disposed in the space; and contact heat resistance Rg between the heat flow control section and the heat flow transmitting section is not less than 1.0×10?6 m2K/W to not more than 5.

Abstract: To select a color tone adjusting mode in an electronic camera, a guide for adjusting the color tone is shown on a monitor (S100), an operation signal from direction buttons is read (S102), and it is judged from the read operation signal whether the direction buttons are operated (S104). When it is judged that the direction buttons are operated, an adjustment value of the color tone corresponding to the operated button is calculated to instruct the correction of the color tone (S106, S108). A decision signal is read (S110), and processes of adjusting the color tone (S102 to S112) are repeated until it is judged that the operation has been terminated. Thus, operability of the electronic camera to adjust the color tone can be improved furthermore.

Abstract: To select a color tone adjusting mode in an electronic camera, a guide for adjusting the color tone is shown on a monitor (S100), an operation signal from direction buttons is read (S102), and it is judged from the read operation signal whether the direction buttons are operated (S104). When it is judged that the direction buttons are operated, an adjustment value of the color tone corresponding to the operated button is calculated to instruct the correction of the color tone (S106, S108). A decision signal is read (S110), and processes of adjusting the color tone (S102 to S112) are repeated until it is judged that the operation has been terminated. Thus, operability of the electronic camera to adjust the color tone can be improved furthermore.

Abstract: An R1 register 101 receives predetermined data of the IP header of an original IP packet, an R2 register receives the predetermined data of the IP header obtained by fragment-processing a packet obtained by dividing the original IP packet, and an R3 register receives portions of the IP header of the original IP packet. An arithmetic circuit 104 subtracts values in the R2 register 102 from a value in the R1 register 101. An arithmetic circuit 105 subtracts a predetermined value from one of the values in the R3 register 103 and recalculates another value in the R3 register 103 corresponding to a change of said one of the value. An arithmetic circuit 106 generates a new value by adding a result of arithmetic operation of the arithmetic circuit 104 and the recalculated value obtained by the arithmetic circuit 105 to each other, and introduces this result into the R3 register 103 or another register.