Patents by Inventor Eiichi Toji

Eiichi Toji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4910156
    Abstract: A silicon wafer and a method of producing a silicon wafer comprising a phosphor-doping method of doping phosphor into a single silicon crystals by transmuting isotope Si.sup.30 contained in said single silicon crystals made by the CZ method or the MCZ method into p.sup.31 under neutron irradiation to said single silicon crystals.
    Type: Grant
    Filed: December 22, 1987
    Date of Patent: March 20, 1990
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Shin'ichiro Takasu, Michihiro Ohwa, Kazuhiko Kashima, Eiichi Toji, Kazumoto Homma
  • Patent number: 4849188
    Abstract: A device for growing single cristals comprising a pair of electromagnetic coils disposed opposed to each other in a symmetry with respect to a central axis of a crucible at an outer side of a heater, an effective average radius of said coil being from 1.5 to 5 times of a radius of said crucible.
    Type: Grant
    Filed: March 26, 1987
    Date of Patent: July 18, 1989
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Shin'ichiro Takasu, Eiichi Toji, Kazumoto Homma, Michihiro Ohwa
  • Patent number: 4847052
    Abstract: A device for growing single crystals comprising a pair of electromagnetic coils disposed opposed to each other in a symmetry with respect to a central axis of a crucible at an outer side of a heater, a diameter for said coils being greater than 0.8 times of a diameter for said heater and a distance between said coils being greater than 1.5 times of said diameter for said heater.
    Type: Grant
    Filed: March 26, 1987
    Date of Patent: July 11, 1989
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Shin'ichiro Takasu, Eiichi Toji, Kazumoto Homma, Michihiro Ohwa