Patents by Inventor Eiichi Umemura
Eiichi Umemura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7215029Abstract: In order to solve the aforementioned problems, the present-invention provides a semiconductor device having a multilayer interconnection structure, wherein an upper interconnection comprises a first metal layer composed of an aluminum alloy, which is formed over a lower interconnection, and a second metal layer formed over the first metal layer and composed of an aluminum alloy formed as a film at a temperature higher than that for the first metal layer. Another invention provides a semiconductor device having a multilayer interconnection structure, wherein a metal region composed of a metal different from an aluminum alloy is formed in a portion spaced by a predetermined distance in an extending direction of an upper interconnection from an end of a via hole defined in the upper interconnection composed of the aluminum alloy, which is electrically connected to a lower interconnection through the via hole.Type: GrantFiled: January 5, 1999Date of Patent: May 8, 2007Assignee: Oki Electric Industry Co., Ltd.Inventor: Eiichi Umemura
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Patent number: 7081758Abstract: An inspection pattern, an inspection method, and an inspection system for detection of a latent defect of a multi-layer wiring structure formed on the semiconductor wafer. The inspection pattern includes lower-layer wiring portions, upper-layer wiring portions, an insulating layer provided between them, contact units connecting them to form a contact chain, and electrode terminals. The inspection method includes the steps of acquiring an applied-voltage versus measured-current characteristic or an elapsed-time versus measured-voltage characteristic of the inspection pattern, and judging presence or absence of a latent defect of the inspection pattern on the basis of the acquired characteristic. The inspection system includes a voltage-applying/current-measuring device or a constant-current-feeding/voltage-measuring device, and a judging device for judging presence or absence of a latent defect of the inspection pattern.Type: GrantFiled: January 19, 2005Date of Patent: July 25, 2006Assignee: Oki Electric Industry Co., Ltd.Inventors: Eiichi Umemura, Hiroyuki Fukunaga, Hiroyuki Nakayashiki
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Publication number: 20050199875Abstract: An inspection pattern, an inspection method, and an inspection system for detection of a latent defect of a multi-layer wiring structure formed on the semiconductor wafer. The inspection pattern includes lower-layer wiring portions, upper-layer wiring portions, an insulating layer provided between them, contact units connecting them to form a contact chain, and electrode terminals. The inspection method includes the steps of acquiring an applied-voltage versus measured-current characteristic or an elapsed-time versus measured-voltage characteristic of the inspection pattern, and judging presence or absence of a latent defect of the inspection pattern on the basis of the acquired characteristic. The inspection system includes a voltage-applying/current-measuring device or a constant-current-feeding/voltage-measuring device, and a judging device for judging presence or absence of a latent defect of the inspection pattern.Type: ApplicationFiled: January 19, 2005Publication date: September 15, 2005Inventors: Eiichi Umemura, Hiroyuki Fukunaga, Hiroyuki Nakayashiki
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Patent number: 6884637Abstract: An inspection pattern, an inspection method, and an inspection system for detection of a latent defect of a multi-layer wiring structure formed on the semiconductor wafer. The inspection pattern includes lower-layer wiring portions, upper-layer wiring portions, an insulating layer provided between them, contact units connecting them to form a contact chain, and electrode terminals. The inspection method includes the steps of acquiring an applied-voltage versus measured-current characteristic or an elapsed-time versus measured-voltage characteristic of the inspection pattern, and judging presence or absence of a latent defect of the inspection pattern on the basis of the acquired characteristic. The inspection system includes a voltage-applying/current-measuring device or a constant-current-feeding/voltage-measuring device, and a judging device for judging presence or absence of a latent defect of the inspection pattern.Type: GrantFiled: August 12, 2002Date of Patent: April 26, 2005Assignee: Oki Electric Industry Co., Ltd.Inventors: Eiichi Umemura, Hiroyuki Fukunaga, Hiroyuki Nakayashiki
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Patent number: 6787705Abstract: An interconnection structure comprises: an interlayer insulating film; and first interconnection layer to which low potential is applied and second interconnection layer to which high potential is applied when the interconnection structure is used, formed with the interlayer insulating film therebetween; and a via hole formed in the interlayer insulating film for electrically connecting the first interconnection layer and second interconnection layer. Overlap regions including regions of the first interconnection layer and the second interconnection layer faced said via hole are formed for both the first interconnection layer and second interconnection layer.Type: GrantFiled: June 24, 2002Date of Patent: September 7, 2004Assignee: Oki Electric Industry Co., Ltd.Inventor: Eiichi Umemura
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Patent number: 6690092Abstract: In order to solve the aforementioned problems, the present invention provides a semiconductor device having a multilayer interconnection structure, wherein an upper interconnection comprises a first metal layer composed of an aluminum alloy, which is formed over a lower interconnection, and a second metal layer formed over the first metal layer and composed of an aluminum alloy formed as a film at a temperature higher than that for the first metal layer. Another invention provides a semiconductor device having a multilayer interconnection structure, wherein a metal region composed of a metal different from an aluminum alloy is formed in a portion spaced by a predetermined distance in an extending direction of an upper interconnection from an end of a via hole defined in the upper interconnection composed of the aluminum alloy, which is electrically connected to a lower interconnection through the via hole.Type: GrantFiled: September 24, 2001Date of Patent: February 10, 2004Assignee: Oki Electric Industry Co., Ltd.Inventor: Eiichi Umemura
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Semiconductor device fabrication method for interconnects that suppresses loss of interconnect metal
Patent number: 6677236Abstract: A semiconductor device fabrication method includes forming a first interconnect and a second interconnect from aluminum or aluminum alloy. The first and second interconnects are formed at different layers and are connected to each other via metal not including aluminum. A hole is provided at the second interconnect, to suppress aluminum loss at ends of the interconnect.Type: GrantFiled: December 10, 2001Date of Patent: January 13, 2004Assignee: Oki Electric Industry Co., Ltd.Inventor: Eiichi Umemura -
Publication number: 20030034558Abstract: An inspection pattern, an inspection method, and an inspection system for detection of a latent defect of a multi-layer wiring structure formed on the semiconductor wafer. The inspection pattern includes lower-layer wiring portions, upper-layer wiring portions, an insulating layer provided between them, contact units connecting them to form a contact chain, and electrode terminals. The inspection method includes the steps of acquiring an applied-voltage versus measured-current characteristic or an elapsed-time versus measured-voltage characteristic of the inspection pattern, and judging presence or absence of a latent defect of the inspection pattern on the basis of the acquired characteristic. The inspection system includes a voltage-applying/current-measuring device or a constant-current-feeding/voltage-measuring device, and a judging device for judging presence or absence of a latent defect of the inspection pattern.Type: ApplicationFiled: August 12, 2002Publication date: February 20, 2003Inventors: Eiichi Umemura, Hiroyuki Fukunaga, Hiroyuki Nakayashiki
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Publication number: 20020157860Abstract: An interconnection structure comprises: an interlayer insulating film; and first interconnection layer to which low potential is applied and second interconnection layer to which high potential is applied when the interconnection structure is used, formed with the interlayer insulating film therebetween; and a via hole formed in the interlayer insulating film for electrically connecting the first interconnection layer and second interconnection layer. Overlap regions including regions of the first interconnection layer and the second interconnection layer faced said via hole are formed for both the first interconnection layer and second interconnection layer.Type: ApplicationFiled: June 24, 2002Publication date: October 31, 2002Inventor: Eiichi Umemura
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Patent number: 6444918Abstract: An interconnection structure comprises: an interlayer insulating film; and first interconnection layer to which low potential is applied and second interconnection layer to which high potential is applied when the interconnection structure is used, formed with the interlayer insulating film therebetween; and a via hole formed in the interlayer insulating film for electrically connecting the first interconnection layer and second interconnection layer. Overlap regions including regions of the first interconnection layer and the second interconnection layer faced said via hole are formed for both the first interconnection layer and second interconnection layer.Type: GrantFiled: June 28, 2001Date of Patent: September 3, 2002Assignee: Oki Electric Industry Co., Ltd.Inventor: Eiichi Umemura
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Publication number: 20020111053Abstract: An interconnection structure comprises: an interlayer insulating film; and first interconnection layer to which low potential is applied and second interconnection layer to which high potential is applied when the interconnection structure is used, formed with the interlayer insulating film therebetween; and a via hole formed in the interlayer insulating film for electrically connecting the first interconnection layer and second interconnection layer. Overlap regions including regions of the first interconnection layer and the second interconnection layer faced said via hole are formed for both the first interconnection layer and second interconnection layer.Type: ApplicationFiled: June 28, 2001Publication date: August 15, 2002Inventor: Eiichi Umemura
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Semiconductor device fabrication method for interconnects that suppresses loss of interconnect metal
Publication number: 20020041035Abstract: A semiconductor device of the present invention comprises a first interconnect and a second interconnect formed from aluminum or aluminum alloy at a different layer to the first interconnect and being connected to the first interconnect via metal not including aluminum, and a hole is provided at the second interconnect. As a result, aluminum loss at ends of the interconnect can be suppressed.Type: ApplicationFiled: December 10, 2001Publication date: April 11, 2002Inventor: Eiichi Umemura -
Patent number: 6346749Abstract: A semiconductor device of the present invention comprises a first interconnect and a second interconnect formed from aluminum or aluminum alloy at a different layer to the first interconnect and being connected to the first interconnect via metal not including aluminum, and a hole is provided at the second interconnect. As a result, aluminum loss at ends of the interconnect can be suppressed.Type: GrantFiled: October 21, 1999Date of Patent: February 12, 2002Assignee: Oki Electric Industry Co., Ltd.Inventor: Eiichi Umemura
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Publication number: 20020014698Abstract: In order to solve the aforementioned problems, the present invention provides a semiconductor device having a multilayer interconnection structure, wherein an upper interconnection comprises a first metal layer composed of an aluminum alloy, which is formed over a lower interconnection, and a second metal layer formed over the first metal layer and composed of an aluminum alloy formed as a film at a temperature higher than that for the first metal layer. Another invention provides a semiconductor device having a multilayer interconnection structure, wherein a metal region composed of a metal different from an aluminum alloy is formed in a portion spaced by a predetermined distance in an extending direction of an upper interconnection from an end of a via hole defined in the upper interconnection composed of the aluminum alloy, which is electrically connected to a lower interconnection through the via hole.Type: ApplicationFiled: September 24, 2001Publication date: February 7, 2002Inventor: Eiichi Umemura