Patents by Inventor Eiichiro Kikuchi
Eiichiro Kikuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10651813Abstract: A method is provided to design a filter. In the method, a difference between a high frequency to be blocked and a resonance frequency of a distributed constant type reference filter is obtained, the reference filter including a reference coil having windings wound at a plurality of pitches having the same length in an axial direction and a capacitor connected in parallel to the reference coil. When the difference is greater than the predetermined value, a split position in the reference coil where the reference coil is divided into a first coil element and a second coil element connected in series and a split distance between the first coil element and the second coil element to reduce the first difference.Type: GrantFiled: June 20, 2017Date of Patent: May 12, 2020Assignee: Tokyo Electron LimitedInventors: Nozomu Nagashima, Naohiko Okunishi, Eiichiro Kikuchi
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Patent number: 10541158Abstract: A temperature adjustment method comprising: forming a wet surface wet with a cooling medium by supplying the cooling medium to a rear surface of a temperature adjustment surface of a component member in a processing chamber of a substrate processing device comprising the processing chamber which performs predetermined processing on a substrate and is vacuum-exhaustible; and adjusting a temperature of the temperature adjustment surface due to latent heat of evaporation of the cooling medium by evaporating the cooling medium which forms the wet surface by adjusting a pressure in an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface.Type: GrantFiled: July 21, 2017Date of Patent: January 21, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yasuharu Sasaki, Eiichiro Kikuchi, Kazuyoshi Matsuzaki
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Publication number: 20170373659Abstract: A method is provided to design a filter. In the method, a difference between a high frequency to be blocked and a resonance frequency of a distributed constant type reference filter is obtained, the reference filter including a reference coil having windings wound at a plurality of pitches having the same length in an axial direction and a capacitor connected in parallel to the reference coil. When the difference is greater than the predetermined value, a split position in the reference coil where the reference coil is divided into a first coil element and a second coil element connected in series and a split distance between the first coil element and the second coil element to reduce the first difference.Type: ApplicationFiled: June 20, 2017Publication date: December 28, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Nozomu NAGASHIMA, Naohiko OKUNISHI, Eiichiro KIKUCHI
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Publication number: 20170323811Abstract: Provided is a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor disposed in the chamber and on which the substrate is held; a shower head provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water.Type: ApplicationFiled: July 21, 2017Publication date: November 9, 2017Inventors: Yasuharu SASAKI, Eiichiro KIKUCHI, Kazuyoshi MATSUZAKI
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Patent number: 9214376Abstract: A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.Type: GrantFiled: February 11, 2008Date of Patent: December 15, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Masakazu Higuma, Yasuharu Sasaki, Tadashi Aoto, Eiichiro Kikuchi
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Publication number: 20150200080Abstract: A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.Type: ApplicationFiled: March 20, 2015Publication date: July 16, 2015Inventors: Eiichiro KIKUCHI, Nobuyuki NAGAYAMA, Takahiro MIYAI
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Patent number: 8545672Abstract: The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.Type: GrantFiled: November 7, 2011Date of Patent: October 1, 2013Assignee: Tokyo Electron LimitedInventors: Nobuyuki Nagayama, Eiichiro Kikuchi
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Patent number: 8343372Abstract: A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.Type: GrantFiled: March 28, 2008Date of Patent: January 1, 2013Assignee: Tokyo Electron LimitedInventors: Tadashi Aoto, Eiichiro Kikuchi, Masakazu Higuma, Kimihiro Higuchi
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Publication number: 20120160808Abstract: A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.Type: ApplicationFiled: December 21, 2011Publication date: June 28, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Eiichiro KIKUCHI, Nobuyuki NAGAYAMA, Takahiro MIYAI
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Publication number: 20120111500Abstract: The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.Type: ApplicationFiled: November 7, 2011Publication date: May 10, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Nobuyuki NAGAYAMA, Eiichiro KIKUCHI
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Publication number: 20120043024Abstract: There is provided a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor which is disposed in the chamber and on which the substrate is held; a shower head which is provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water.Type: ApplicationFiled: August 19, 2011Publication date: February 23, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuharu SASAKI, Eiichiro KIKUCHI, Kazuyoshi MATSUZAKI
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Patent number: 7815492Abstract: A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.Type: GrantFiled: March 19, 2007Date of Patent: October 19, 2010Assignee: Tokyo Electron LimitedInventors: Yasuharu Sasaki, Masakazu Higuma, Tadashi Aoto, Eiichiro Kikuchi
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Publication number: 20080280536Abstract: A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.Type: ApplicationFiled: March 19, 2007Publication date: November 13, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuharu Sasaki, Masakazu Higuma, Tadashi Aoto, Eiichiro Kikuchi
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Publication number: 20080237030Abstract: A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.Type: ApplicationFiled: March 28, 2008Publication date: October 2, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Tadashi Aoto, Eiichiro Kikuchi, Masakazu Higuma, Kimihiro Higuchi
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Publication number: 20080217291Abstract: A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.Type: ApplicationFiled: February 11, 2008Publication date: September 11, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Masakazu HIGUMA, Yasuharu Sasaki, Tadashi Aoto, Eiichiro Kikuchi