Patents by Inventor Eiichiro Otobe
Eiichiro Otobe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8860506Abstract: There is provided an amplifying apparatus which can prevent characteristic deterioration while reducing costs. The amplifying apparatus includes a first amplifier connected between an input terminal to which a high-frequency signal is input and an output terminal through which the high-frequency signal is output, including a bipolar transistor, and amplifying the high-frequency signal input from the input terminal; a second amplifier including a bipolar transistor, amplifying the high-frequency signal input from the input terminal, and having a lower maximum output power than that of the first amplifier; and a switching unit connected between the second amplifier and the output terminal, and selectively outputting the high-frequency signal amplified by the second amplifier through the output terminal.Type: GrantFiled: September 11, 2012Date of Patent: October 14, 2014Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kouki Tanji, Eiichiro Otobe
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Patent number: 8779840Abstract: There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.Type: GrantFiled: January 20, 2012Date of Patent: July 15, 2014Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tsuyoshi Sugiura, Eiichiro Otobe, Koki Tanji, Norihisa Otani
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Patent number: 8587363Abstract: There is provided a high frequency switching circuit reducing power consumption at the time of signal reception and signal transmission. The high frequency switching circuit includes a pulse generation unit generating a clock selecting pulse signal having a predetermined active period; a clock selection unit selecting a reference clock signal when the clock selecting pulse signal is in an active state and selecting a low-speed clock signal having a frequency lower than that of the reference clock signal when the clock selecting pulse signal is not in an active state; a voltage down unit accumulating negative charges in a capacitor to generate predetermined negative voltage; and a switching unit including at least one switch holding a turned-off state by being applied with the predetermined negative voltage.Type: GrantFiled: January 20, 2012Date of Patent: November 19, 2013Assignee: Samsung Electro-Mechanics Co., Ltd.Inventor: Eiichiro Otobe
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Patent number: 8575992Abstract: A switch is capable of performing switching, while reducing distortion with respect to amplitude of a high frequency signal. The switch includes: an input terminal to which a high frequency signal is input; a first switching unit connected between the input terminal and a first output terminal and selectively outputting the high frequency signal through the first output terminal; and a second switching unit connected between the input terminal and a second output terminal and selectively outputting the high frequency signal through the second output terminal. Each switching unit includes an impedance transformer installed on a signal line, a bipolar transistor having an emitter grounded, a collector connected to the signal line, and a base receiving current according to a control voltage applied thereto; and a bipolar transistor having a collector grounded, an emitter connected to the signal line, and a base receiving current according to the control voltage.Type: GrantFiled: September 11, 2012Date of Patent: November 5, 2013Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kouki Tanji, Eiichiro Otobe
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Publication number: 20130187698Abstract: There is provided a high frequency switching circuit reducing power consumption at the time of signal reception and signal transmission. The high frequency switching circuit includes a pulse generation unit generating a clock selecting pulse signal having a predetermined active period; a clock selection unit selecting a reference clock signal when the clock selecting pulse signal is in an active state and selecting a low-speed clock signal having a frequency lower than that of the reference clock signal when the clock selecting pulse signal is not in an active state; a voltage down unit accumulating negative charges in a capacitor to generate predetermined negative voltage; and a switching unit including at least one switch holding a turned-off state by being applied with the predetermined negative voltage.Type: ApplicationFiled: January 20, 2012Publication date: July 25, 2013Inventor: Eiichiro OTOBE
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Publication number: 20130147551Abstract: There is provided an amplifying apparatus which can prevent characteristic deterioration while reducing costs. The amplifying apparatus includes a first amplifier connected between an input terminal to which a high-frequency signal is input and an output terminal through which the high-frequency signal is output, including a bipolar transistor, and amplifying the high-frequency signal input from the input terminal; a second amplifier including a bipolar transistor, amplifying the high-frequency signal input from the input terminal, and having a lower maximum output power than that of the first amplifier; and a switching unit connected between the second amplifier and the output terminal, and selectively outputting the high-frequency signal amplified by the second amplifier through the output terminal.Type: ApplicationFiled: September 11, 2012Publication date: June 13, 2013Inventors: Kouki TANJI, Eiichiro Otobe
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Publication number: 20130141161Abstract: There is provided a power amplifier capable of compensating for a distortion without deteriorating a gain of input voltage. The power amplifier includes an input terminal to which an input voltage is applied; a class AB power amplification circuit connected to the input terminal; and an element connected between the input terminal and the class AB power amplification circuit, turned on when the input voltage is equal to or greater than a predetermined value, and varying impedance thereof according to the input voltage.Type: ApplicationFiled: September 12, 2012Publication date: June 6, 2013Inventors: Norihisa OTANI, Eiichiro Otobe
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Publication number: 20130106495Abstract: A switch is capable of performing switching, while reducing distortion with respect to amplitude of a high frequency signal. The switch includes: an input terminal to which a high frequency signal is input; a first switching unit connected between the input terminal and a first output terminal and selectively outputting the high frequency signal through the first output terminal; and a second switching unit connected between the input terminal and a second output terminal and selectively outputting the high frequency signal through the second output terminal. Each switching unit includes an impedance transformer installed on a signal line, a bipolar transistor having an emitter grounded, a collector connected to the signal line, and a base receiving current according to a control voltage applied thereto; and a bipolar transistor having a collector grounded, an emitter connected to the signal line, and a base receiving current according to the control voltage.Type: ApplicationFiled: September 11, 2012Publication date: May 2, 2013Inventors: Kouki TANJI, Eiichiro OTOBE
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Publication number: 20120154017Abstract: There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.Type: ApplicationFiled: January 20, 2012Publication date: June 21, 2012Inventors: Tsuyoshi SUGIURA, Eiichiro Otobe, Koki Tanji, Norihisa Otani
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Patent number: 7864000Abstract: There is provided a high frequency switching circuit that can reduce generation of a harmonic signal without using a boost circuit.Type: GrantFiled: November 14, 2008Date of Patent: January 4, 2011Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Norihisa Otani, Eiichiro Otobe
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Patent number: 7847655Abstract: Disclosed is a switch circuit capable of reducing distortion caused by harmonics and preventing an increase in insertion loss even if the number of ports increases. The switching circuit includes one common output port, M first switches having one set of ends connected in common to a first node (M?2 where M is a constant), N second switches having one set of ends connected in common to the common output port (N?1 where N is a constant), a third switch having one end connected to the common output port and the other end connected to the first node, M first input ports respectively connected to the other set of ends of the first switches, and N second input ports respectively connected to the other set of ends of the second switches. One selected among the first input ports and the second input ports is connected to the common output port, and if one of the first input ports is selected, the third switch is closed.Type: GrantFiled: July 28, 2008Date of Patent: December 7, 2010Assignee: Samsung Electro-Mechanics., Ltd.Inventors: Norihisa Otani, Eiichiro Otobe
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Publication number: 20090160264Abstract: There is provided a high frequency switching circuit that can reduce generation of a harmonic signal without using a boost circuit.Type: ApplicationFiled: November 14, 2008Publication date: June 25, 2009Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Norihisa OTANI, Eiichiro Otobe
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Publication number: 20090033435Abstract: Disclosed is a switch circuit capable of reducing distortion caused by harmonics and preventing an increase in insertion loss even if the number of ports increases. The switching circuit includes one common output port, M first switches having one set of ends connected in common to a first node (M?2 where M is a constant), N second switches having one set of ends connected in common to the common output port (N?1 where N is a constant), a third switch having one end connected to the common output port and the other end connected to the first node, M first input ports respectively connected to the other set of ends of the first switches, and N second input ports respectively connected to the other set of ends of the second switches. One selected among the first input ports and the second input ports is connected to the common output port, and if one of the first input ports is selected, the third switch is closed.Type: ApplicationFiled: July 28, 2008Publication date: February 5, 2009Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Norihisa OTANI, Eiichiro Otobe
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Patent number: 7292096Abstract: A high power amplifier having high efficiency, compact and low cost characteristics based on the simple circuit structure effectively used over a wide range of the output power. A control circuit controls power supply operations of the power supply unit such that a high power amplifying unit can act as a low loss resistor that does not amplify the input signal during low power operation of the amplifier, but the high power amplifying unit amplifies the input signal during high power operation.Type: GrantFiled: June 21, 2005Date of Patent: November 6, 2007Assignee: Samsung Electronics Co., Ltd.Inventor: Eiichiro Otobe
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Publication number: 20060006935Abstract: A high power amplifier having high efficiency, compact and low cost characteristics based on the simple circuit structure effectively used over a wide range of the output power. A control circuit controls power supply operations of the power supply unit such that a high power amplifying unit can act as a low loss resistor that does not amplify the input signal during low power operation of the amplifier, but the high power amplifying unit amplifies the input signal during high power operation.Type: ApplicationFiled: June 21, 2005Publication date: January 12, 2006Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventor: Eiichiro Otobe