Patents by Inventor Eiichirou Uda

Eiichirou Uda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity region
    Patent number: 6447355
    Abstract: There is provided an impregnated-type cathode substrate comprising a large particle diameter low porosity region and a small particle diameter high porosity region which is provided in a side of an electron emission surface of the large particle diameter low porosity region and has an average particle diameter smaller than an average particle diameter of the large particle diameter low pore region and a porosity higher than a porosity of the large particle diameter low porosity region, the impregnated-type cathode being impregnated with an electron emission substance.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: September 10, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiichirou Uda, Toshiharu Higuchi, Osamu Nakamura, Kiyomi Koyama, Sadao Matsumoto, Yoshiaki Ouchi, Kazuo Kobayashi, Takashi Sudo, Katsuhisa Homma
  • Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity region
    Patent number: 6304024
    Abstract: There is provided an impregnated-type cathode substrate comprising a large particle diameter low porosity region and a small particle diameter high porosity region which is provided in a side of an electron emission surface of the large particle diameter low porosity region and has an average particle diameter smaller than an average particle diameter of the large particle diameter low pore region and a porosity higher than a porosity of the large particle diameter low porosity region, the impregnated-type cathode being impregnated with an electron emission substance.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: October 16, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiichirou Uda, Toshiharu Higuchi, Osamu Nakamura, Kiyomi Koyama, Sadao Matsumoto, Yoshiaki Ouchi, Kazuo Kobayashi, Takashi Sudo, Katsuhisa Homma
  • Impregnated type cathode assembly, cathode substrate for use in the assembly, electron gun using the assembly, and electron tube using the cathode assembly
    Patent number: 6034469
    Abstract: There is provided an impregnated-type cathode substrate comprising a large particle diameter low porosity region and a small particle diameter high porosity region which is provided in a side of an electron emission surface of the large particle diameter low porosity region and has an average particle diameter smaller than an average particle diameter of the large particle diameter low pore region and a porosity higher than a porosity of the large particle diameter low porosity region, the impregnated-type cathode being impregnated with an electron emission substance.
    Type: Grant
    Filed: December 9, 1997
    Date of Patent: March 7, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiichirou Uda, Toshiharu Higuchi, Osamu Nakamura, Kiyomi Koyama, Sadao Matsumoto, Yoshiaki Ouchi, Kazuo Kobayashi, Takashi Sudo, Katsuhisa Homma