Abstract: A substrate holder apparatus includes a substrate holder configured to hold a substrate in a vacuum processing space in a chamber, a support column coupled to the substrate holder, a first rotating support unit which rotatably supports the support column, a second rotating support unit which rotatably supports the support column at a position spaced apart from a position where the first rotating support unit supports the support column, and a housing configured to support the first rotating support unit and the second rotating support unit. The second rotating support unit and the housing or the support column and the housing are electrically insulated from each other.

Abstract: A substrate holder apparatus includes a substrate holder configured to hold a substrate in a vacuum processing space in a chamber, a support column coupled to the substrate holder, a first rotating support unit which rotatably supports the support column, a second rotating support unit which rotatably supports the support column at a position spaced apart from a position where the first rotating support unit supports the support column, a housing configured to support the first rotating support unit and the rotating support unit, and a conductive member configured to electrically connect the support column to the housing.

Abstract: [Objection of the invention]An ion beam generator, a thermal distortion in a grid assembly is reduced. [Structure to solve the objection]Thermal expansion coefficients ?P, ?M and ?G, for a sidewall (1A) of a discharge chamber, mounting platform (40) and extraction grid electrode assembly (20) are selected to have a relation: ?P>?M??G. For example, the material of discharge chamber sidewall is stainless steel o aluminum, the material of grids is Mo, W or C and the material of platform is Ti or Mo.

Abstract: [Objective of the Invention] An ion beam generator, a thermal distortion in a grid assembly is reduced. [Structure to Solve the Objective] Thermal expansion coefficients ?P, ?M and ?G, for a sidewall (1A) of a discharge chamber, mounting platform (40) and extraction grid electrode assembly (20) are selected to have a relation: ?P>?M??G. For example, the material of discharge chamber sidewall is stainless steel o aluminum, the material of grids is Mo, W or C and the material of platform is Ti or Mo.

Abstract: A microwave plasma treatment apparatus comprises a plurality of auxiliary magnets arranged around the periphery of a plasma formation chamber. A plurality of auxiliary magnets are disposed along the circumference of the plasma formation chamber while a plurality of auxiliary magnets may also be arranged in the axial direction of the plasma formation chamber. Also, the magnetic poles of every auxiliary magnet are respectively reverse in polarity to the adjoining magnetic poles of an auxiliary magnet(s) disposed adjacent thereto either along the circumference of the plasma formation chamber or in the axial direction thereof. This enables the whole high-density plasma to be substantially uniform throughout the inside of the plasma formation chamber.