Patents by Inventor Eiji Hamasuna

Eiji Hamasuna has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 6531747
    Abstract: A driver transistor including a gate electrode is formed on the surface of a p well of a silicon substrate. A silicon oxide film and a silicon nitride film are formed to cover the driver transistor. An interlayer insulator film is formed on the silicon nitride film. A contact hole is arranged to planarly overlap with at least the gate electrode. Thus, a semiconductor device capable of performing desired operations and reducing a memory cell area is obtained.
    Type: Grant
    Filed: April 20, 2000
    Date of Patent: March 11, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Motoi Ashida, Yoshikazu Kamitani, Eiji Hamasuna
  • Static semiconductor memory device
    Patent number: 6169313
    Abstract: A shared contact is provided on the side of a drain active region of each of two load transistors. Thus, a stabilized low voltage operation is ensured in a full CMOS type SRAM memory cell having the shared contact.
    Type: Grant
    Filed: June 10, 1999
    Date of Patent: January 2, 2001
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kazuhito Tsutsumi, Motoi Ashida, Yoshiyuki Haraguti, Hideaki Nagaoka, Eiji Hamasuna, Yoshikazu Kamitani