Patents by Inventor Eiji Higa
Eiji Higa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220249015Abstract: An improved sleep onset/offset detection method based on a compact neural network that runs in a wearable device processing sensor data in near real-time, which means accumulating data from a few minutes instead of seconds before starting predictions.Type: ApplicationFiled: March 16, 2021Publication date: August 11, 2022Applicant: SAMSUNG ELETRÔNICA DA AMAZÔNIA LTDA.Inventors: Antonio Joia Neto, Felipe Marinho Tavares, Paulo Augusto Alves Luz Viana, Vitor Fernando Da Silva Alquati, Matheus De Souza Ataide, Lin Tzy Li, Daniel Eiji Higa, Otávio A.B. Penatti
-
Patent number: 8895407Abstract: A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.Type: GrantFiled: September 27, 2010Date of Patent: November 25, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Miyairi, Akihisa Shimomura, Tatsuya Mizoi, Eiji Higa, Yoji Nagano
-
Patent number: 8871610Abstract: To increase adhesion between a single crystal semiconductor layer and a base substrate and to reduce bonding defects therebetween. To perform radical treatment on a surface of a semiconductor substrate to form a first insulating film on the semiconductor substrate; irradiate the semiconductor substrate with accelerated ions through the first insulating film to form an embrittlement region in the semiconductor substrate; form a second insulating film on the first insulating film; perform heat treatment after bonding a surface of the second insulating film and a surface of the base substrate to perform separation along the embrittlement region so that a semiconductor layer is formed over the base substrate with the first and second insulating films interposed therebetween; etch the semiconductor layer; and irradiate the semiconductor layer on which the etching is performed with a laser beam.Type: GrantFiled: September 29, 2009Date of Patent: October 28, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akihisa Shimomura, Masaki Koyama, Eiji Higa
-
Patent number: 8772128Abstract: A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.Type: GrantFiled: October 7, 2008Date of Patent: July 8, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junpei Momo, Fumito Isaka, Eiji Higa, Masaki Koyama, Akihisa Shimomura
-
Patent number: 8772129Abstract: A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.Type: GrantFiled: September 27, 2010Date of Patent: July 8, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Miyairi, Akihisa Shimomura, Tatsuya Mizoi, Eiji Higa, Yoji Nagano
-
Patent number: 8703579Abstract: A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.Type: GrantFiled: July 20, 2011Date of Patent: April 22, 2014Assignee: Semiconductor Energy Laborator Co., Ltd.Inventors: Hidekazu Miyairi, Hironobu Shoji, Akihisa Shimomura, Eiji Higa, Tomoaki Moriwaka, Shunpei Yamazaki
-
Patent number: 8563431Abstract: In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes using a photoresist and simplifying the process is provided, and the throughput is improved. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a stacked layer structure of a light absorption layer and an insulating layer utilizing laser ablation by laser beam irradiation through a photomask.Type: GrantFiled: August 17, 2007Date of Patent: October 22, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Miyairi, Eiji Higa
-
Patent number: 8343847Abstract: To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation.Type: GrantFiled: October 8, 2009Date of Patent: January 1, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masaki Koyama, Junpei Momo, Eiji Higa, Hiroaki Honda, Tamae Moriwaka, Akihisa Shimomura
-
Patent number: 8313989Abstract: To provide an SOI substrate having a high mechanical strength, and a method for manufacturing the SOI substrate, a single crystal semiconductor substrate is irradiated with accelerated ions so that an embrittled region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween; the single crystal semiconductor substrate is heated to be separated along the embrittled region, so that a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween; and a surface of the semiconductor layer is irradiated with a laser beam so that at least a superficial part of the semiconductor layer is melted, whereby at least one of nitrogen, oxygen, and carbon is solid-dissolved in the semiconductor layer.Type: GrantFiled: October 16, 2009Date of Patent: November 20, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hideto Ohnuma, Eiji Higa
-
Patent number: 8216914Abstract: An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.Type: GrantFiled: August 31, 2010Date of Patent: July 10, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masaki Koyama, Kosei Nei, Toru Hasegawa, Junpei Momo, Eiji Higa
-
Patent number: 8193068Abstract: To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.Type: GrantFiled: February 2, 2011Date of Patent: June 5, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Eiji Higa, Yoji Nagano, Tatsuya Mizoi, Akihisa Shimomura
-
Publication number: 20110275191Abstract: A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.Type: ApplicationFiled: July 20, 2011Publication date: November 10, 2011Inventors: Hidekazu Miyairi, Hironobu Shoji, Akihisa Shimomura, Eiji Higa, Tomoaki Moriwaka, Shunpei Yamazaki
-
Patent number: 7994021Abstract: A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.Type: GrantFiled: July 25, 2007Date of Patent: August 9, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Miyairi, Hironobu Shoji, Akihisa Shimomura, Eiji Higa, Tomoaki Moriwaka, Shunpei Yamazaki
-
Publication number: 20110136320Abstract: To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.Type: ApplicationFiled: February 2, 2011Publication date: June 9, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Eiji HIGA, Yoji NAGANO, Tatsuya MIZOI, Akihisa SHIMOMURA
-
Patent number: 7927991Abstract: In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a light absorption layer including a material which absorbs a laser beam. The mask is formed by irradiating the light absorption layer with a laser beam through a photomask and utilizing laser ablation by energy of the laser beam absorbed by the light absorption layer.Type: GrantFiled: August 15, 2007Date of Patent: April 19, 2011Assignee: Semiconductor Energy laboratory Co., Ltd.Inventors: Hidekazu Miyairi, Yasuhiro Jinbo, Eiji Higa, Shunpei Yamazaki
-
Publication number: 20110076837Abstract: A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.Type: ApplicationFiled: September 27, 2010Publication date: March 31, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hidekazu MIYAIRI, Akihisa SHIMOMURA, Tatsuya MIZOI, Eiji HIGA, Yoji NAGANO
-
Publication number: 20110053384Abstract: An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.Type: ApplicationFiled: August 31, 2010Publication date: March 3, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Masaki KOYAMA, Kosei NEI, Toru HASEGAWA, Junpei MOMO, Eiji HIGA
-
Patent number: 7897476Abstract: To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOI substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.Type: GrantFiled: March 31, 2008Date of Patent: March 1, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Eiji Higa, Yoji Nagano, Tatsuya Mizoi, Akihisa Shimomura
-
Patent number: 7820524Abstract: A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.Type: GrantFiled: March 28, 2008Date of Patent: October 26, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Miyairi, Akihisa Shimomura, Tatsuya Mizoi, Eiji Higa, Yoji Nagano
-
Publication number: 20100096720Abstract: To provide an SOI substrate having a high mechanical strength, and a method for manufacturing the SOI substrate, a single crystal semiconductor substrate is irradiated with accelerated ions so that an embrittled region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween; the single crystal semiconductor substrate is heated to be separated along the embrittled region, so that a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween; and a surface of the semiconductor layer is irradiated with a laser beam so that at least a superficial part of the semiconductor layer is melted, whereby at least one of nitrogen, oxygen, and carbon is solid-dissolved in the semiconductor layer.Type: ApplicationFiled: October 16, 2009Publication date: April 22, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hideto OHNUMA, Eiji HIGA